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인 유전자 재조합 에르트로포에틴(이프렉스 프리필드 시린지) 투여가 말기신부전 환자의 운동 능력과 삶의 질에 미치는 영향
이승헌,김영옥,김석영,박철휘,김용수,장윤식,송호철,윤선애,방병기,최의진,안석주,양철우,신영신,진동찬,윤성노 대한신장학회 1997 Kidney Research and Clinical Practice Vol.16 No.3
To determine whether rHuEPO improves the exercise capacity and the global quality of life, 52 nondiabetic patients with end stage renal disease undergoing dialysis (hemodialysis 42, CAPD 10, M 34, F 18) were selected from 7 affiliated hospitals with the Catholic University in Korea. We injected rHuEPO (4000 unit 3 times a week, Eprex prefilled syringe. Cilag AG, Switzerland) subcutaneous to the patients with Hb level 7-9g/dL. After reaching the target Hb level 10-12g/dL, patients were maintained for another 4 weeks. All patients received oral or intravenous iron through trial. The exercise capacity was evaluated by using a standard incremental cycle exercise protocol with treadmill, step walk load in fixed floors and the global quality of life was assessed by means of an interview based on questionnaire (scale 1-7). The initial Hb level (7.4? 0.9g/dL) were increased to the target Hb level (10.0-12.0g/dL) on 5.5±2.3 week and highest level (11.8? 1.4g/dL) on 8 week (p$lt;0.001). In exercise capacity test, thimes of step walk in established two floors before rHuEPO, on target Hb, and after 4 weeks of target level were decreased (Group A: 2 floors, n=37, 15.3±5.0 sec, 14.5±4.4 sec, 13.9±4.7 sec, p$lt;0.01, Group B: 3 floors, n=l3, 44.0±11.3 sec, 32.8?8.0 sec, 32.8±5.2 sec, p$lt;0.01). The times of walk and the amounts of work load in treadmill before rHuEPO and after 4 weeks of target level were increased (walk time 482±143 sec, 572±147 sec, p$lt;0.01, work load 9.4±2.5 mets, 11.0±2.5 mets. P$lt;0.01). In the global quality of life, all the score of improvement of fatigue (4.3±1.1, 5.2±1.0, 5.4±1.0), the daily activity (4.8±1.4, 5.5 ?0.9, 5.5±1.1) and the quality of life (4.0±1.1, 4.8±0.7, 4.9±0.8) were improved (p$lt;0.01). rHuEPO treated patients had increased blood pressure (before rHuEPO 138.8±21.7/82.3±10.5mmHg, after 4 weeks of target level 149.7±23.0/89.5±13.8mmHg, p$lt;0.01) In conclusion, it is meaningful to maintain the Hb level of 10-12g/dL for better quality of life and exercise capacity in paenal disease undergoing dialysis.
GaAs Power MESFETs for Personal Communications at 850 MHz
Lee,J. L.,Mun,J. K.,Kim,H.,Kwon,O. S.,MaEng,S. J.,Lee,J. J.,Lee, H. G.,Yoon,K. J.,Jeon,K. L.,Hong,S. C.,Koo,K. H.,Lee,C. S.,Park,S. S.,Kim,D. K.,Hwang,I. D.,Park,H. M.,Park,S. C. 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
GaAs power metal semiconductor field effect transistors (MESFETs) were fabricated on 3 GaAs wafer with a low-high doped structure, grown by molecular beam epitary (M$E). The fabricated MESFETs with a gate width of 7.5 mm show a saturated drain current (Idss) of I.7A and .an uniform transconductance (Gm) of around 600mS, ranged from Vgs = -2.4 V to 0.5 V. The gate-drain breakdown voltage is measured to higher than 25 V. The rf characteristics of the MESFETs at a frequency of 836.5 MHz are measured to 1.5 W of the output power and 61% of dower added efficiency (PAE) under a drain bias condition of 5.8 V and a 10% Idss of 160 mA (Class AB), and to 1.2 W of the output power and 58% of PAE under a drain bias of 4.7 V. When the drain bias reduced to 3.5V, 0.65 W of the output power and 58% of PAE were obtained. This suggests that the low-high doped structure designed in the present work is effective to low voltage operation of the power FET in the application of digital, portable radio communication.
A Minimum-Complexity 0.35㎛ Surface-Channel CMOS Process for Digital Logic and Analog Applications
Demirlioglu, E.,Yoon, E.,Pierce, J.,Blair, C.,Moverly, L.,Geha, S.,Wei, J.,Ciari, R.,Chen, K.,Kuo, C. S.,Sadjadi, R.,Brown, K.,Sethna, P.,Bariya, A.,Rocchetta, S. Della 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
This paper presents a minimum-complexity 0.35 ㎛ CMOS technology with high performance and law mask count. Scaled LOCOS isolation and implantation through the field oxide allow a simplified process flow and provide adequate isolation at minimum active pacing. This architecture produces a retrograde well structure without requiring a MeV-energy implant. Surface channel PMOS and NMOS transistors with double diffused drains and silicide give high drive currents of 0.23 and 0.47mA/㎛, respectively, and low off-state leakage below 10pA/㎛ at drain voltage of 3.3 V.