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탄화규소 단결정의 폴리타입 안정화를 위한 종자정 표면특성 연구
이상일,박미선,이도형,이희태,배병중,서원선,이원재,Lee, Sang-Il,Park, Mi-Seon,Lee, Doe-Hyung,Lee, Hee-Tae,Bae, Byung-Joong,Seo, Won-Seon,Lee, Won-Jae 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.12
SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.
6H-SiC 기판 위에 혼합소스 HVPE 방법으로 성장된 AlN 에피층 특성
박정현,김경화,전인준,안형수,양민,이삼녕,조채용,김석환 한국결정성장학회 2020 한국결정성장학회지 Vol.30 No.3
In this paper, AlN epilayers on 6H-SiC (0001) substrate are grown by mixed source hydride vapor phase epitaxy(MS-HVPE). AlN epilayer of 0.5 μm thickness was obtained with a growth rate of 5 nm per hour. The surface of AlN epilayergrown on 6H-SiC (0001) substrate was investigated by field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Dislocation density was considered through HR-XRD and related calculations. A fine crystalline AlN epilayer with screw dislocation density of 1.4 × 10⁹cm⁻² and edge dislocation density of 3.8 × 10⁹cm⁻² was confirmed. The AlN epilayer on 6H-SiC (0001) substrate grown by using the mixed source HVPE method could be applied to power devices. 본 논문에서는 6H-SiC (0001) 기판 위에 AlN 에피층을 혼합 소스 수소화물 기상 에피택시 방법에 의해 성장하였다. 시간당 5 nm의 성장률로 0.5 μm 두께의 AlN 에피층을 얻었다. FE-SEM과 EDS 결과를 통해 6H-SiC (0001) 기판 위에 성장된 AlN 에피층 표면을 조사하였다. HR-XRD와 계산식을 통해 전위 밀도를 예측하였다. 1.4×10⁹cm⁻²의 나사 전위밀도와 3.8 × 10⁹cm⁻²의 칼날 전위 밀도를 가지는 우수한 결정질의 AlN 에피층을 확인하였다. 혼합소스 HVP E 방법에 의해성장된 6H-SiC 기판 위의 AlN 에피층은 전력소자 등에 응용이 가능할 것으로 판단된다.
화학기상증착법에 의한 6H-SiC 기판상의 3C-SiC 이종박막 성장
장성주,박주훈 한국결정성장학회 2003 한국결정성장학회지 Vol.13 No.6
본 연구에서는 열화학기상증착법을 사용하여 6H-SiC 기판 위에 silane($SiH_4$)과 prophane($C_3H_8$)을 사용하여 3C-SiC 이종박막을 성장시키고 이의 성장 특성을 조사하였다. C/Si 유량 비율이 4.0, 운반기체의 유량은 5 slm이고 성장온도가 $1200^{\circ}C$인 경우의 박막성장율은 약 1.8 $\mu$m/h이었다. 성장박막의 Nomarski 표면형상, X-선 회절분광, Raman 산란 특성 및 광발광(PL) 특성 등을 측정하고 성장조건에 따른 결정성을 비교하였다. 이러한 평가를 통하여 성장온도 $1150^{\circ}C$ 이상에서 양질의 결정성 3C-SiC 이종박막이 성장점을 확인하였다. The heteroepitaxial growth of crystalline 3C-SiC on 6H-SiC substrates using high purity silane ($SiH_4$) and prophane ($C_3H^8$) was carried out by thermal chemical vapor deposition, and growth characteristics were investigated in this study. In case that the flow ratio of C/Si and flow rate of $H_2$ were 4.0 and 5.0 slm, respectively, the growth rate of epilayers was about 1.8 $\mu$m/h at growth temperature of $1200^{\circ}C$. The Nomarski surface morphology, X-ray diffraction, Raman spectroscopy, and photoluninescence of grown epilayers were measured to investigate the crystallinity. In this study, the high quality of crystalline 3C-SiC heteropitaxial layers was observed at growth temperature of above $1150^{\circ}C$.
Analytical Expressions for Breakdown Voltage and Specific On-Resistance of 6H-SiC PN Diodes
정용성,Chung, Yong-Sung The Institute of Electronics and Information Engin 2009 電子工學會論文誌-CI (Computer and Information) Vol.46 No.6
6H-SiC 전자 및 정공의 이온화계수로부터 유효이온화계수를 추출하여 6H-SiC PN 다이오드의 항복전압과 온-저항을 위한 해석적 표현식을 유도하였다. 해석적 모형으로부터 구한 항복전압을 $10^{15}{\sim}10^{18}\;cm^{-3}$의 도핑 농도 범위에서 실험 결과와 비교하여 10% 이내의 오차로 일치하였고, 농도 함수의 온-저항의 해석적 결과도 $5{\times}10^{15}{\sim}10^{16}\;cm^{-3}$의 범위에서 이미 발표된 수치적 결과와 매우 잘 일치하였다. Analytical expressions for breakdown voltage and specific on-resistance of 6H-SiC PN diodes have been derived successfully by extracting an effective ionization coefficient from ionization coefficients for electron and hole in 6H-SiC. The breakdown voltages induced from our analytical model are compared with experimental results. The variation of specific on-resistance as a function of doping concentration is also compared with the one reported previously. Good fits with experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of $10^{15}{\sim}10^{18}cm^{-3}$. The analytic results show good agreement with the numerical data for the specific on-resistance in the region of $5{\times}10^{15}{\sim}10^{16}cm^{-3}$.
Effect of Polarity on a SiC Crystal Grown on a SiC Dual-seed Crystal by Using the PVT Method
박종휘,이원재,양우성,정정영,이상일,박미선,신병철,여임규,은태희,Seung-Seok Lee,Myong-Chuel Chun 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.21
SiC crystal ingots were grown on 4H-SiC dual-seed crystals by using a physical vapor transport (PVT) technique, and SiC crystal wafers and cross sections sliced from the SiC ingot were systematically investigated to find the polarity dependence of the crystal polytype. The growth rate of the SiC crystal grown in this study was about 0.15 mm/hr. N-type 2-inch SiC crystals exhibiting 4H- and 6H-SiC polytypes were successfully fabricated on the C-face and the Si-face, respectively. As the growth of the SiC crystal ingot proceeded, the SiC crystal region grown on the C-face seed crystal was enlarged compared to the SiC crystal region grown on the Si-face seed crystal. The incorporation of nitrogen donors and the growth rate in the SiC crystals grown on the C-face seed crystal were be higher than those in SiC crystals grown on a Si-face crystal.
6H-SiC PN 다이오드의 항복전압과 온-저항을 위한 해석적 표현
정용성(Yong-Sung Chung) 대한전자공학회 2009 電子工學會論文誌-SD (Semiconductor and devices) Vol.46 No.6
6H-SiC 전자 및 정공의 이온화계수로부터 유효이온화계수를 추출하여 6H-SiC PN 다이오드의 항복전압과 온-저항을 위한 해석적 표현식을 유도하였다. 해석적 모형으로부터 구한 항복전압을 10<SUP>15</SUP>~10<SUP>18</SUP> ㎝<SUP>-3</SUP>의 도핑 농도 범위에서 실험 결과와 비교하여 10% 이내의 오차로 일치하였고, 농도 함수의 온-저항의 해석적 결과도 5×10<SUP>15</SUP>~10<SUP>16</SUP> ㎝<SUP>-3</SUP>의 범위에서 이미 발표된 수치적 결과와 매우 잘 일치하였다. Analytical expressions for breakdown voltage and specific on-resistance of 6H-SiC PN diodes have been derived successfully by extracting an effective ionization coefficient from ionization coefficients for electron and hole in 6H-SiC. The breakdown voltages induced from our analytical model are compared with experimental results. The variation of specific on-resistance as a function of doping concentration is also compared with the one reported previously. Good fits with experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of 10<SUP>15</SUP>~10<SUP>18</SUP> ㎝<SUP>-3</SUP>. The analytic results show good agreement with the numerical data for the specific on-resistance in the region of 5×10<SUP>15</SUP>~10<SUP>16</SUP> ㎝<SUP>-3</SUP>.
CMP 공정에서 슬러리와 웨이퍼 형상이 SiC 웨이퍼 표면품질에 미치는 영향
박종휘,양우성,정정영,이상일,박미선,이원재,김재육,이상돈,김지혜,Park, Jong-Hwi,Yang, Woo-Sung,Jung, Jung-Young,Lee, Sang-Il,Park, Mi-Seon,Lee, Won-Jae,Kim, Jae-Yuk,Lee, Sang-Don,Kim, Ji-Hye 한국세라믹학회 2011 한국세라믹학회지 Vol.48 No.4
The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.
탄화규소 단결정 성장 시 종자정 도핑농도 영향에 따른 결정 다형변화 연구
박종휘,양태경,이상일,정정영,박미선,이원재,Park, Jong-Hwi,Yang, Tae-Kyoung,Lee, Sang-Il,Jung, Jung-Young,Park, Mi-Seon,Lee, Won-Jae 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.10
In this study, SiC single-crystal ingots were prepared on two seed crystals with different doping level by using the physical vapor transport (PVT) technique; then, SiC crystal wafers sliced from the grown SiC ingot were systematically investigated to find the effect of seed doping level on the doping concentration and crystal quality of the SiC. To exclude extra effects induced by adjustment of the process parameters, we simultaneously grew the SiC crystals on two seed crystals with different level, which were fabricated from previous two SiC crystal ingots.
Obaidullah Obaid,Zhao RuiXuan,Li XiangCao,Wan ChuBin,Sui TingTing,Ju Xin 한국원자력학회 2023 Nuclear Engineering and Technology Vol.55 No.8
In fusion environments, large scales of helium (He) atoms are produced by a radical transformation along with structural damage in structural materials, resulting in material swelling and degradation of physical properties. To understand its irradiation effects, this paper investigates the stability, electronic structure, energetics, charge density distribution, PDOS and TDOS, and diffusion processes of He impurities in 6HSiC materials. The formation energy indicates that a stable, favorable position for interstitial He is the HR site with the lowest energy of 2.40 eV. In terms of vacancy, the He atom initially prefers to substitute at pre-existing Si vacancy than C vacancy due to lower substitution energy. The minimum energy paths (MEPs) with migration energy barriers are also calculated for He impurity by interstitial and vacancymediated diffusion. Based on its calculated energy barriers, the most possible diffusion path includes the exchange of interstitial and vacancy sites with effective migration energies ranging from 0.101 eV to 1.0 eV. Our calculation provides a better understanding of the stabilization and diffusion behaviors of He impurities in 6H-SiC materials