CMP 공정에서 슬러리와 웨이퍼 형상이 SiC 웨이퍼 표면품질에 미치는 영향 = The Effect of Slurry and Wafer Morphology on the SiC Wafer Surface Quality in CMP Process

다국어 초록 (Multilingual Abstract)

The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

참고문헌 (Reference)

1 정영석, "슬러리 온도 및 유량에 따른 CMP 연마특성" 한국정밀공학회 21 (21): 46-52, 2004

2 이현섭, "The effect of mixed abrasive slurry on CMP of 6H-SiC substrate" Trans Tech Publications Ltd. 569 (569): 133-136, 2008

3 C. L. Neslen, "Effects of Process Parameter Variations on the Removal Rate in Chemical Mechanical Polishing of 4H-SiC" 30 (30): 1271-1275, 2001

4 L. Zhou, "Chemomechanical Polishing of Silicon Carbide" 144 (144): 161-163, 1997

5 V. D. Heydemann, "Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates" 457 : 805-808, 2004