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Investigating energy partitioning during photosynthesis using an expanded quantum yield convention
Ahn, T.K.,Avenson, T.J.,Peers, G.,Li, Z.,Dall'Osto, L.,Bassi, R.,Niyogi, K.K.,Fleming, G.R. Elsevier Science Publishers [etc.] 2009 Chemical physics Vol.357 No.1
In higher plants, regulation of excess absorbed light is essential for their survival and fitness, as it enables avoidance of a build up of singlet oxygen and other reactive oxygen species. Regulation processes (known as non-photochemical quenching; NPQ) can be monitored by steady-state fluorescence on intact plant leaves. Pulse amplitude modulated (PAM) measurements of chlorophyll a fluorescence have been used for over 20 years to evaluate the amount of NPQ and photochemistry (PC). Recently, a quantum yield representation of NPQ (Φ<SUB>NPQ</SUB>), which incorporates a variable fraction of open reaction centers, was proposed by Hendrickson et al. [L. Hendrickson, R.T. Furbank, W.S. Chow, Photosynth. Res. 82 (2004) 73]. In this work we extend the quantum yield approach to describe the yields of reversible energy-dependent quenching (Φ<SUB>qE</SUB>), state transitions to balance PC between photosystems II and I (Φ<SUB>qT</SUB>), and photoinhibition quenching associated with damaged reaction centers (Φ<SUB>qI</SUB>). We showed the additivity of the various quantum yield components of NPQ through experiments on wild-type and npq1 strains of Arabidopsis thaliana. The quantum yield approach enables comparison of Φ<SUB>qE</SUB> with data from a variety of techniques used to investigate the mechanism of qE. We showed that Φ<SUB>qE</SUB> for a series of A. thaliana genotypes scales linearly with the magnitude of zeaxanthin cation formation, suggesting that charge-transfer quenching is largely responsible for qE in plants.
Eo, Y.J.,Lee, W.,Kim, K.,Ahn, S.,Cho, A.,Gwak, J.,Yoon, K.,Moon, S.Y.,Jung, H.R.,Kim, J.H.,Yun, J.H. Elsevier 2014 Current Applied Physics Vol.14 No.10
Carbon-free CuInSe<SUB>2</SUB> (CIS) thin film with a dense microstructure has been prepared using a novel non-vacuum based fabrication route. Cu<SUB>x</SUB>S<SUB>y</SUB> and In<SUB>2</SUB>Se<SUB>3</SUB> binary nanoparticles, approximately 10 nm in size, were synthesized by a low temperature colloidal process. The precursor film was deposited using the coating ink formulated with the binary nanoparticles and pyridine, and then annealed in the rapid thermal annealing (RTA) chamber at 540 <SUP>o</SUP>C for 15 min under selenium (Se) atmosphere. Scanning electron micrographs, X-ray diffraction patterns and Raman spectra showed a phase pure carbon-free and dense CIS thin film was prepared in this method. A solar cell device fabricated using this CIS thin film showed the following photovoltaic characteristics: V<SUB>OC</SUB> = 350 mV, J<SUB>SC</SUB> = 24.72 mA cm<SUP>-2</SUP>, FF = 38.73% and η = 3.36% under standard AM 1.5 condition.
HVPE 방법에 의해 r-plane 사파이어 기판 위의 선택 성장된 GaN/AlGaN 이종 접합구조의 특성
홍상현,전헌수,한영훈,김은주,이아름,김경화,황선령,하홍주,안형수,양민,Hong, S.H.,Jeon, H.S.,Han, Y.H.,Kim, E.J.,Lee, A.R.,Kim, K.H.,Hwang, S.L.,Ha, H.,Ahn, H.S.,Yang, M. 한국결정성장학회 2009 한국결정성장학회지 Vol.19 No.1
본 논문에서는 혼합소스(mixed-source) HVPE(hydride vapor phase epitaxy)방법으로 선택성장(SAC: selective area growth) GaN/AlGaN 이종접합구조의 발광다이오드를 r-plane 사파이어 기판 위에 제작하였다. SAG-GaN/AlGaN DH(double heterostructure)는 고온 GaN 버퍼층, Te 도핑된 AlGaN n-클래딩층. Gan 활성층. Mg 도핑된 AlGaN p-클래딩층. Mg 도핑된 GaN p-캡층으로 구성되어있다. GaN/AlGaN 이종접합구조의 발광다이오드의 특성을 알아보기 위해 SEM을 통한 구조적 분석과 전류-전압 측정(I-V: current-voltage measurement), 전류-광출력(EL: electroluminescence) 측정을 통하여 전기적, 광학적 특성을 평가하였다. In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.
Search for light tetraquark states in ϒ(1S) and ϒ(2S) decays
Jia, S.,Shen, C. P.,Yuan, C. Z.,Adachi, I.,Ahn, J. K.,Aihara, H.,Al Said, S.,Asner, D. M.,Atmacan, H.,Aushev, T.,Ayad, R.,Babu, V.,Badhrees, I.,Bahinipati, S.,Bakich, A. M.,Bansal, V.,Behera, P.,Berge American Physical Society 2017 Physical review. D Vol.96 No.11
<P>We search for the J(PC) = 0(--) and 1(+-) light tetraquark states with masses up to 2.46 GeV/c(2) in gamma(1S) and gamma(2S) decays with data samples of (102 +/- 2) million and (158 +/- 4) million events, respectively, collected with the Belle detector. No significant signals are observed in any of the studied production modes, and 90% credibility level (C. L.) upper limits on their branching fractions in Upsilon(1S) and Upsilon(2S) decays are obtained. The inclusive branching fractions of the Upsilon(1S) and Upsilon(2S) decays into final states with f(1)(1285) are measured to be B(Upsilon(1S) -> f(1)(1285) + anything) = (46 +/- 28(stat) +/- 13(syst)) x 10(-4) and B(Upsilon(2S) -> f(1)(1285) + anything) = (22 +/- 15(stat) +/- 6.3(syst)) x 10(-4). The measured chi(b2) -> J/Psi + anything branching fraction is measured to be (1.50 +/- 0.34(stat) +/- 0.22(syst)) x 10(-3), and 90% C. L. upper limits for the chi(b0;b1) -> J/Psi + anything branching fractions are found to be 2.3 x 10(-3) and 1.1 x 10(-3), respectively. For B(chi(b1) -> omega + anything), the branching fraction is measured to be (4.9 +/- 1.3(stat) +/- 0.6(syst) x 10(-2). All results reported here are the first measurements for these modes.</P>
김소연,김유리,김지현,박샘이,박지혜,안소미,이은별,조소혜 이화여자대학교 간호학회 2011 이화간호학회지 Vol.- No.45
The purpose of this study was to know relationship between Health Promotion Behaviors and Mental Health of Korean Highschool Students, prove adjustable factors and provide basic data which develops nursing intervention health promotion program. The method of this study was descriptive correlational study. The convenience sample was 242 highschool students who study in Seoul or Kyunggi certain academic highschools. Collected data was processed using SPSS for Windows(ver. 17.0) program. General Characteristics used real number and percentage. The score of Health Promotion Behaviors and Mental Health were analyzed using average and standard deviation. Distinction of Mental Health according to General Characteristics was analyzed using t-test and ANOVA. Relationship of Health Promotion Behaviors and Mental Health was anlyzed using Pearson Correaltion Coefficient. The result of this study was follows. 1. It can be found that the level of the highschool student's mental health was 1.08±.55 with lower level than medium: According to general characteristic, the level of mental health was 5% significant statistical differences by grade and general health condition. also, the level of mental health was 1% significant statistical differences by BMI and satisfaction of school life. 2. The level of the highschool student's health promotion lifestyle was 2.53±.38 with higher fulfilling level. 3. As the core aspect of this study, the relationship of health promotion and mental health was investigated(r= -.166). The level of depression turned out most convincing factor in health promotion lifestyle(r= -.195). also, the level of nutrition turned out most convincing factor in mental health(r= -.226). It was shown that the more fulfilling health promotion lifestyle, the more having good condition of mental health.