http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
이현재,하준석,Hyo-Jong Lee,Seogwoo Lee,Meoungwhan Cho,T. Yao,김진교,홍순구,장지호 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.6
The effect of refined nitridation of sapphire substrates on the characteristics of GaN layers subsequently grown by using hydride vapor phase epitaxy (HVPE) was investigated. When low-temperature-grown (LTG) GaN buffer layers were grown on nitridated sapphire substrates in a refined way, the structural characteristics of the LTG GaN layers were found to be transferred to the subsequent high-temperature-grown (HTG) GaN layers. This result implies that well-controlled nitridation of sapphire substrates plays an important role and that the quality of the HTG GaN layer can be rationally controlled by monitoring the characteristics of a LTG GaN buffer layer when it is grown on a properly nitridated sapphire substrate.
하주형,왕주안,이원재,최영준,Hae-Yong Lee,Jung-Gon Kim,Hiroshi Harima 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.6
The hydride vapor-phase epitaxy (HVPE) method was used to deposit high-quality InN layerson GaN inter-layer/sapphire (0001) structures that had been fabricated by using either the HVPEmethod or the metal-organic chemical-phase deposition (MOCVD) method. The effects of the groupV/III ratio and different GaN inter-layers on the crystal quality of the InN layers were systemicallyinvestigated. The InN layer grown at a low Group V/III ratio revealed a high crystal qualitywith a two-dimensional (2D) growth mode. Also, the 110.7-nm-thick InN layer grown by usingHVPE on a GaN inter-layer/sapphire (0001) substrate structure that had been fabricated by usingMOCVD had a high crystal quality, with the full width at half maximum (FWHM) of the InNX-ray diffraction (XRD) peak being about 844 arcsec, and a smooth surface with an atomic forcemicroscopy (AFM) roughness of about 0.07 nm. On the other hand, the 145.7-nm-thick InN layergrown by using HVPE on a GaN inter-layer/sapphire (0001) substrate structure that had beenfabricated by using the HVPE method had a lower crystal quality, a FWHM value for the InN(0002) peak of about 2772 arcsec, and a surface roughness of about 3.73 nm. In addition, the peakof the E2 (high) phonon mode for the 110.7-nm-thick InN layer grown by using HVPE on a GaNinter-layer/sapphire (0001) structure that had been fabricated by using MOCVD was detected at491 cm−1 and had a FWHM of 9.9 cm−1. As a result, InN layers grown by using HVPE on GaNinter-layer/sapphire (0001) substrate structures fabricated by using MOCVD have a high crystalquality and a reduced Raman value, which agrees well with the results of the XRD analysis.
Migration-Assisted Formation of GaN Nanodisks by Hydride Vapor-Phase Epitaxy
김진교,이상화 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.3
GaN nanodisks, which can be used as nanoscale dielectric resonators for compact photonic nanodevices, were grown by using hydride vapor-phase epitaxy with growth interruption. Growth interruption enhanced surface migration of species and controlled growth interruption allowed the formation of GaN nanodisks at a growth temperature of 1050 ℃ and even at a growth temperature as low as 510 ℃.
Branching Characteristics of GaN Multipods Grown by Using Hydride Vapor Phase Epitaxy
김진교,Yuri Sohn 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.3
GaN multipods were grown on c-plane sapphire substrates by using hydride vapor phase epitaxy (HVPE) and their branching characteristics were investigated by utilizing scanning electron microscopy. A catalyst-free vapor-solid growth mechanism gave rise to diversity in the formation of multipods in various structures. We found that the core structure primarily determined the branching configuration of the sideward GaN nanorods. Depending on whether the core had a zincblende structure or wurtzite structure, either 3-fold symmetric multipods without a vertical nanorod or 6-fold multipods were favorably grown.
박진섭,하준석,홍순구,Seog Woo Lee,Meoung Whan Cho,Takafumi Yao,이해우,이상화,이성근,이효종 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.2
We investigated the nucleation and growth behavior of GaN on various powders by hydride vapor phase epitaxy. In relative comparison, the nucleation tendency of GaN on each powder can be summarized as AlN >LaN, TiN, NbN > ZrN > ZrB2 > VN, BeO, indicating that the number of nucleation sites increased from right to left. LaN and NbN have not yet been reported as buffer materials for GaN growth. Of these, NbN is expected to be a good buffer material because the interatomic distance on the NbN (111) plane has only 2% difference from that on the GaN (0001) plane.
Bae, Hyojung,Kim, Haseong,Ju, Jin-Woo,Jeon, Dae-Woo,Ryu, Sang-Wan,Moon, Youngboo,Ha, Jun-Seok The Electrochemical Society 2019 Journal of the Electrochemical Society Vol.166 No.4
<P>Photoelectrochemical (PEC) characteristics of GaN grown by hydride vapor-phase epitaxy (HVPE) with different polarizations were studied and compared. The polar GaN used a (0001)-oriented plane and the semipolar GaN used a (20-21)-oriented plane. The photocurrent density of polar GaN exhibited a two-fold increase over that of semipolar GaN. Bulk GaN sustained water splitting up to 400 h at 0 V versus the reference electrode. To the best of our knowledge, this is the highest value reported for PEC water-splitting stability. This demonstrates the potential of GaN thin films grown by HVPE for application in large-scale solar-fuel conversion.</P>
조영지,장지호,하준석,Hyun-jae Lee,Katsushi Fujii,Takafumi Yao,Woong Lee,Takashi Sekiguchi,Jun-Mo Yang,Jungho Yoo 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.2
Remarkable reduction of the threading dislocation (TD) density has been achieved by insertinga GaN layer grown at an intermediate temperature (900 C) (IT-GaN layer), just prior to thegrowth of GaN at 1040 C by using a hydride vapor phase epitaxy. The variation in the dislocationdensity variation along the growth direction was observed by using cathodoluminescence (CL) andtransmission electron microscopy (TEM). A cross-sectional CL image revealed that the reductionof the TD density happened during the growth of IT-GaN layer. The TEM measurement providedthe proof that the TD reduction could be ascribed to the masking of the TD by stacking faults inthe IT-GaN layer.
혼합 소스 수소화물 기상 에피택시에 의한 AlN 에피층 성장
배숭근,전인준,양민,이삼녕,안형수,전헌수,김경화,이상칠,김석환 한국물리학회 2018 새물리 Vol.68 No.1
A high-quality AlN epilayer as a base for next generation power semiconductor devices was grown by the mixed-source hydride vapor phase epitaxy (HVPE) method. Mixed-source HVPE is a growth method that used a mixed-source of solid-state semiconductor materials and is different from the existing HVPE method. Various substrates having an influence on the growth of AlN epilayers were analyzed. Changes in the crystal structure and threading dislocation concentrations in AlN epilayers were investigated by using X-ray diffraction (XRD) measurements. In addition, the origin of the defects caused by the lattice mismatch between the grown epilayer and the crystal structure of the substrate was analyzed, and growth characteristics of AlN epilayers grown by using the mixed-source HVPE method were investigated. 차세대 전력 반도체 소자의 기반이 될 양질의 AlN 에피층을 혼합 소스 수소화물 기상 에피택시 (hydride vapor phase epitaxy, HVPE) 방법으로 성장시켰다. 혼합 소스 수소화물 기상 에피택시 방법은 기존의 수소화물 기상 에피택시 방법과는 다르게 고체 상태 반도체 물질들의 혼합 소스에 의해 성장 되어지는 방법이다. 본 논문에서는 성장된 AlN 에피층 내 관통 전위 밀도와 결정구조의 변화가 X선 회절 (X-ray diffraction, XRD) 측정으로 조사 되었다. 또한 성장된 에피층과 기판 결정 구조 사이의 격자 부정합에 의한 결함의 원인을 분석하고, 혼합 소스 수소화물 기상 에피택시 방법으로 기판별 AlN 에피층의 성장 특성을 조사하였다.
HVPE 방법에 의해 r-plane 사파이어 기판 위의 선택 성장된 GaN/AlGaN 이종 접합구조의 특성
홍상현,전헌수,한영훈,김은주,이아름,김경화,황선령,하홍주,안형수,양민,Hong, S.H.,Jeon, H.S.,Han, Y.H.,Kim, E.J.,Lee, A.R.,Kim, K.H.,Hwang, S.L.,Ha, H.,Ahn, H.S.,Yang, M. 한국결정성장학회 2009 한국결정성장학회지 Vol.19 No.1
본 논문에서는 혼합소스(mixed-source) HVPE(hydride vapor phase epitaxy)방법으로 선택성장(SAC: selective area growth) GaN/AlGaN 이종접합구조의 발광다이오드를 r-plane 사파이어 기판 위에 제작하였다. SAG-GaN/AlGaN DH(double heterostructure)는 고온 GaN 버퍼층, Te 도핑된 AlGaN n-클래딩층. Gan 활성층. Mg 도핑된 AlGaN p-클래딩층. Mg 도핑된 GaN p-캡층으로 구성되어있다. GaN/AlGaN 이종접합구조의 발광다이오드의 특성을 알아보기 위해 SEM을 통한 구조적 분석과 전류-전압 측정(I-V: current-voltage measurement), 전류-광출력(EL: electroluminescence) 측정을 통하여 전기적, 광학적 특성을 평가하였다. In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.
Ky Nam Hoang,박진호,김홍탁,Woosuk Jun 한국화학공학회 2012 Korean Journal of Chemical Engineering Vol.29 No.1
Gallium nitride (GaN) epitaxial thin films were deposited on Si substrates by a modified hydride vapor phase epitaxy (MHVPE) technique utilizing the GaN seed-layer formed from liquid source precursor. Tris N,N-dimethyldithiocarbamato gallium(III) (Ga(mDTC)3) powder was dissolved in chloroform (CHCl3) to prepare the liquid source precursor for seed-layer formation. The developed method was found to be suitable for the epitaxial growth of GaN on Si in spite of the large mismatch in lattice constants and thermal expansion coefficients, resulting in device-quality epitaxial films with fairly smooth surface morphology. The epitaxial GaN films obtained in this study had a hexagonal structure with (0002) preferred orientation with the FWHM value of 428.6 arcsec of the (0002) GaN XRD peak. Photoluminescence spectra of GaN films exhibited a strong and sharp peak at 3.41 eV with the FWHM value of 107meV.