Heteroepitaxial Growth of GaN on Various Powder Compounds (AlN, LaN, TiN, NbN, ZrN, ZrB2, VN, BeO) by Hydride Vapor Phase Epitaxy

다국어 초록 (Multilingual Abstract)

We investigated the nucleation and growth behavior of GaN on various powders by hydride vapor phase epitaxy. In relative comparison, the nucleation tendency of GaN on each powder can be summarized as AlN >LaN, TiN, NbN > ZrN > ZrB2 > VN, BeO, indicating that the number of nucleation sites increased from right to left. LaN and NbN have not yet been reported as buffer materials for GaN growth. Of these, NbN is expected to be a good buffer material because the interatomic distance on the NbN (111) plane has only 2% difference from that on the GaN (0001) plane.

참고문헌 (Reference)

1 T. Hashimoto, 6 : 568-, 2007

2 P.-L. Liu, 157 : 577-, 2010

3 K. Ito, 38 : 511-, 2009

4 Y. Yamada-Takamura, 95 : 266105-, 2005

5 R. Armitage, 81 : 1450-, 2002

6 M. A. Moram, 91 : 152101-, 2007

7 P. Rajagopal, 743 : 3-, 2003

8 P.-L. Lie, 72 : 245335-, 2005

9 H.-J. Lee, 91 : 202116-, 2007

10 S. W. Lee, 90 : 061907-, 2007

11 J.-S. Ha, 20 : 175-, 2008

12 L. Manna, 2 : 382-, 2003

13 P. E. Van Camp, 81 : 23-, 1992

14 A. Trassoudaine, 260 : 7-, 2004

15 E. Aujol, 222 : 538-, 2001

16 B. P. Burton, 100 : 113528-, 2006

17 C. J. Lu, 94 : 245-, 2003

18 C. Y. Yeh, 46 : 10086-, 1992

19 V. A. Epel'baum, 32 : 2274-, 1958

20 A. N. Christensen, A31 : 77-, 1977

21 I. I. Timofeeva, A 29 : 563-, 1975

22 H. Holleck, 91 : 237-, 1980

23 F. Kubel, 36 : 1415-, 1987

24 P. Ettmayer, 110 : 1109-, 1979

25 J. W. Downs, 41 : 425-, 1985

26 K. Lorenz, 77 : 3391-, 2000