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과민성방광의 비수술적 치료 : 방광의 저장용적을 증가시키는 치료법 Therapy to Increase Bladder Storage Capacity
송윤섭,문기혁,박영호 순천향의학연구소 2004 Journal of Soonchunhyang Medical Science Vol.10 No.1
Overactive bladder including frequency, nocturia, urgency ate common and Its cause is decreased bladder storage capacity. Non-pharmacologic therapy to facilitate bladder storage capacity are behavioral, bladder overdistention or electrical stimulation. For behavioral therapy, patient education about lower urinary tract function, information about lifestyle changes or dietary modification, bladder training which includes instituting intervals of timed voiding and gradually increasing these intervals, pelvic floor physiotherapy with or without biofeedback are necessary. For physically or mentally challenged individuals, schedulled toileting or prompted voiding is necessary, too. Bladder overdistention, electrical stimulation or neuromodulation are also used for the treatment of overactive bladder.
A Case of Bladder Cancer Found during a Workup for Urge Incontinence
송윤섭,조규형,김근우,윤종현,두승환,양원재,조주영,이동화 대한배뇨장애요실금학회 2010 International Neurourology Journal Vol.14 No.2
Irritative urinary symptoms may suggest the possibility of bladder cancer. We report a case of metastatic bladder cancer that was discovered during a workup for urge incontinence in a 65-year-old woman with a history of stomach cancer. She had a medical history of gastrectomy due to stomach cancer 4 years previously. The patient complained of urgency unresponsive to anticholinergic therapy. Cystoscopy revealed the presence of suspicious bladder mucosal lesions that were biopsied. The pathology was consistent with metastatic signet-ring cell adenocarcinoma. This case suggests that irritative urinary symptoms can be the first clinical manifestation in patients with bladder cancer.
송윤섭,김재민,김수원 한국통신학회 2004 韓國通信學會論文誌 Vol.29 No.4A
본 논문에서는 CMOS 공정을 사용하여 선형적으로 제어가 가능한 П모델 감쇄기를 구현하였고, 브릿지 T모델을 사용한 감쇄기를 제안하였다. CMOS 공정으로 코어의 수동소자를 트랜지스터로 구현하여 기존의 수동소자나 능동소자를 사용하는데 따른 문제점을 개선하였으며 GaAs MESFET공정의 문제점인 높은 비용 또한 해결하였다. П모델 감쇄기는 2-poly 4-metal 0.35$\mu\textrm{m}$ CMOS 공정을 사용하여 구현하였으며 기존의 수백 MHz의 동작 주파수범위를 DC-l㎓ 대역으로 향상시켰다. 또한 700$\mu\textrm{m}$${\times}$300$\mu\textrm{m}$ 로 면적을 줄였으며 일정한 주파수에서 감쇄 값과 제어 전압 사이의 선형적인 관계를 개선하였다. 제안된 브릿지 T모델 감쇄기는 П모델에서 동작주파수를 제한하던 매칭 특성을 향상시킴으로써 동작 주파수 템위를 DC-2㎓ 대역으로 넓혔다. To reaffirm the use of a mainstream CMOS process for designing passive-like attenuator structures, a linearly controlled variable attenuator is realized with 0.35${\mu}{\textrm}{m}$ 2-poly 4-metal CMOS process. It uses the П configuration for large attenuation range and suitable matching property. Compared to conventional passive-like CMOS attenuators, it is demonstrated that this work advances the frequency band from MHz to ㎓ (DC- l㎓), and reduces the size to 700${\mu}{\textrm}{m}$${\times}$300${\mu}{\textrm}{m}$.. Both simulation results and test results are provided. They show the improved linear relation between attenuation and control voltage. It is very useful in CDMA or GSM band, which uses under 1㎓ frequency band. An alternative topology, Bridged-T configuration, is proposed to get over the limit of applications by elevating operation bandwidth. The proposed topology covers over DC-2㎓ frequency band, which means that the proposed architecture can cover the tripleband (800MHz CDMA/GSM, 1.5㎓ GPS, 1.9㎓z PCS system) in applications as well. The simulation results are provided.