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정난주,황의수,강선영,지미경 대한산부인과학회 1998 Obstetrics & Gynecology Science Vol.41 No.7
본 저자들은 임신 24주+5일에 시행한 산전 초음파검사상 선천성 낭포성 유선종 폐기형을 의심하여 임공 임신 중절 후 병리학적으로 확진된(type Ⅱ & Ⅲ, mixed) 1예를 경험하였기에 간단한 문헌적 고찰과 함께 보고하는 바이다. Congenital cystic adenomatoid malformation (CCAM) is a rare variant of congenital pulmonary cystic disease. It is characterized by cessation of bronchiolar maturation with an over-growth of mesenchymal elements and proliferation of polypoid glandular tissue in the absence of normal alveolar differentiation. Approximately, 200cases have been reported in the literature in the world and the antenatal diagnosis by ultrasonography has been described in several case reports. In 80% to 95% of cases, CCAM of the lung is confined to a single lobe and there is no lobe predilection for right and left predominance. The early diagnosis of the lethal macrocystic form of abnormality before a gestational age 25wks allowed the elective termination of pregnancy. We report one case of this condition where the diagnosis was made antenatally.
Fermi-Level Pinning at the Poly-Si/HfO2 Interface
정난주 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.6
The high threshold voltage in metal-oxide-semiconductor field effect transistor (MOSFET) devices adopting hafnia for the gate oxide material is a serious concern for alternative high-Κ gate oxides. The Fermi-level pinning at the highly-doped poly-Si/metal oxide interface has been reported as a cause because the interfacial metal-Si bonds can induce pinning of the Fermi level. In this work, the electronic structure and the chemical bonding states at the interface of n+ type and p+ type poly- Si/HfO2 were measured by using transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS) in order to find the reason for the high threshold voltage. The obtained Hf 4f core-level spectrum shows no Hf-Si state at the interface. Therefore, metallic Hf-Si bond formation at the interface may not be the reason for the high threshold voltage. The high threshold voltage in metal-oxide-semiconductor field effect transistor (MOSFET) devices adopting hafnia for the gate oxide material is a serious concern for alternative high-Κ gate oxides. The Fermi-level pinning at the highly-doped poly-Si/metal oxide interface has been reported as a cause because the interfacial metal-Si bonds can induce pinning of the Fermi level. In this work, the electronic structure and the chemical bonding states at the interface of n+ type and p+ type poly- Si/HfO2 were measured by using transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS) in order to find the reason for the high threshold voltage. The obtained Hf 4f core-level spectrum shows no Hf-Si state at the interface. Therefore, metallic Hf-Si bond formation at the interface may not be the reason for the high threshold voltage.
정난주,Jae-Kwan Cheong 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.6
The chemical states of a graphene layer after N2 plasma treatment were investigated by using X-ray photoelectron spectroscopy and Raman spectroscopy. The graphene layer were deposited on a Cu film by using the chemical vapor deposition method. The graphene surface was exposed to a N2 plasma in vacuum chamber at room temperature. By controlling the time of N2 plasma treatment, we could identify the C-N bonding state in the C 1s spectra and the quaternary N state in the N 1s spectra. The valence band edge was shifted to higher binding energy by the N2 plasma treatment. These imply that the nitrogen atom is chemisorbed in the graphene layer, replacing the carbon atom, by N2 plasma treatment and that the Fermi level of the graphene layer is shifted up due to the electron supply from the N atom. The decrease in the intensity ratio D/G in Raman spectroscopy also supports that the N atom is chemisorbed in the graphene layer.
정난주,서창식,황의수,강선영 대한산부인과학회 1997 Obstetrics & Gynecology Science Vol.40 No.3
Intra-abdominal pregnancy is uncommon occurrence, constituting only 1% of all ectopic pregnancy. It is usually the result of a tubal or ovarian pregnancy that has aborted or ruptured into the peritoneal cavity. However, the complications of abdominal pregnancy can be devastating. Premature placental separation with massive hemorrhage, hypofibrinogenemia following fetal demise, and suppuration and abscess formation lead to producing maternal health risk. A perinatal mortality and maternal mortality were 85-95% and 0.5-6% respect-ively, from the world literature. Optimal obstetrical care requires early diagnosis and prompt surgical intervention. Recently, a patient presented to the St.Francisco general Hospital with a retained abdominal pregnancy of 6 years duration without complications, as discussed below.