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허수빈,한미란,김성환,최진욱 대한자기공명의과학회 2019 Investigative Magnetic Resonance Imaging Vol.23 No.3
Although many imaging modalities can play some roles in the diagnosis of vertebral artery dissection (VAD), digital subtraction angiography (DSA) remains the gold standard method, with the highest detection rate and ability to assist in planning for endovascular treatment. However, this tool is often avoided in children because its invasive nature and it exposes them to radiation. High resolution magnetic resonance imaging (HR-MRI) have been suggested to be a reliable and non-invasive alternative, but it has never been discussed in children in whom vertebral artery dissection is a rare condition. In this report, we evaluate a case of a 2-year-old child who initially presented with cerebellar symptoms, and was early diagnosed with vertebral artery dissection using HR- MRI and was successfully treated.
Fe<sub>2</sub>O<sub>3</sub> 첨가에 의한 폐PCB로부터 긁어낸 Cu분말의 용융 및 정제
허수빈,손호상,Heo, Su-Bin,Sohn, Ho-Sang 한국자원리싸이클링학회 2017 資源 리싸이클링 Vol.26 No.4
본 연구에서는 폐 PCB(printed circuit board) 표면을 긁어내어 회수한 구리분말을 용융하는 과정에서 용융온도 저감과 정제를 위하여 플럭스로 $Fe_2O_3$를 첨가하였으며, $Fe_2O_3$ 첨가량 및 온도에 따른 구리의 회수율과 불순물 농도에 미치는 영향을 조사하였다. 구리 회수율은 반응온도와 $Fe_2O_3$의 첨가비율이 증가할 수 록 증가하였다. 그리고 구리 중 산소, 실리콘, 철의 농도는 $Fe_2O_3$ 첨가량이 증가할수록 감소하였다. $Fe_2O_3$를 첨가하여 반응시킨 후의 슬래그를 XRD로 분석하여 fayalite($2FeO{\cdot}SiO_2$)와 철산화물을 확인하였다. 따라서 fayalite 슬래그의 생성에 의한 슬래그의 융점과 점도 감소가 구리 회수율의 증가에 크게 기여한 것으로 생각된다. In this study, $Fe_2O_3$ was added as a flux to decrease melting temperature and refine during melting of Cu powder from scraped surface of the waste PCB (printed circuit board). The effect of $Fe_2O_3$ ratio to Cu powder and temperature on the recovery of Cu and content of impurities were investigated. It was found that the recovery of Cu was increased with increasing addition ratio of $Fe_2O_3$ and reaction temperature. The contents of O, Si and Fe in Cu phase were also decreased with increasing addition ratio of $Fe_2O_3$ and temperature. The formation of fayalite ($2FeO{\cdot}SiO_2$) and iron oxides phases in the slag was confirmed by XRD analysis after reaction with $Fe_2O_3$. Therefore, it was considered that the decrease of melting temperature and viscosity of slag by formation of fayalite slag contributed remarkably to the Cu recovery.
허수빈,유종훈,김민주,이연진,강성준 한국공업화학회 2020 한국공업화학회 연구논문 초록집 Vol.2020 No.-
We demonstrate the efficient hole injection mechanism with gap state using vanadium oxide (V<sub>2</sub>O<sub>5</sub>) hole injection layer (HIL) for highperformance and inorganic quantum dots (QDs) light emitting diode (QLED). Effective hole injection characteristics were observed at the hole only device (HOD). Moreover, we investigated that the density of gap states was increased according to reduce the annealing temperature. Therefore, QLEDs with a low-temperature processable V<sub>2</sub>O<sub>5</sub> HIL was fabricated, and the device showed remarkable performances. The maximum luminance based on ITO electrode and IWO electrode device were measured as 56,717 cd/㎡ and 9,443.5 cd/㎡, respectively. The result demonstrates that the inorganic V<sub>2</sub>O<sub>5</sub> HIL is a promising alternative to organic HILs for state-of-the-art QLEDs.
허수빈,김민주,유종훈,이연진,강성준 한국물리학회 2019 Current Applied Physics Vol.19 No.6
A low-temperature solution-processable inorganic vanadium oxide (V2O5) hole injection layer (HIL) was synthesized for flexible quantum-dot light-emitting diodes (QLEDs). Efficient hole injection characteristics were observed in the hole-only devices; furthermore, the process temperature of V2O5 was as low as 30 °C. We investigated the source of the efficient hole injection behavior using ultraviolet and x-ray photoelectron spectroscopy. The density of gap states was found to increase in accordance with process temperature reduction. Therefore, QLEDs with low-temperature solution-processable V2O5 HILs were fabricated on a glass substrate, which showed excellent characteristics. The maximum luminance and luminous efficiency of the device were 56,717 Cd/m2 and 4.03 Cd/A, respectively. Due to the low-temperature process of the V2O5 HIL, it was also possible to fabricate QLEDs on a flexible plastic substrate without mechanical or thermal deformation of the substrate. Our results suggest that the low-temperature V2O5 inorganic HIL is a feasible alternative to organic HILs for flexible QLEDs.
허수빈,강성준,Heo, Subeen,Kang, Seong Jun 한국진공학회 2017 진공 이야기 Vol.4 No.4
Recently, quantum-dots light emitting diodes (QLEDs) are considered as a next-generation display due to the superior luminescence behaviors, photo stability and narrow spectral emission bandwidth. Moreover, the emission color of QLEDs can be easily controlled by changing the dimension of quantum dots (QDs). A flexible display based on QLEDs can be achieved using low-cost solution process, such as a printing technology. Therefore, QLEDs are expected as a next generation display. In this document, recent progresses in QDs technology will be introduced.
허수빈,유종훈,신재승,김태연,김병석,전우진,강성준 한국공업화학회 2020 한국공업화학회 연구논문 초록집 Vol.2020 No.-
We tested the Al<sub>2</sub>O<sub>3</sub> layer deposited by atomic layer deposition (ALD) using O<sub>2</sub> * plasma to insulating & electron blocking layer for charge balance in quantum-dot (QD) light-emitting diodes (QLEDs). On the one hand, the O<sub>2</sub> * plasma can reduce the oxygen vacancy of ZnO so that can decrease the exciton quenching phenomenon. It led to excellent device performance and maximum luminance was 56,108 cd/㎡, when 1nm Al<sub>2</sub>O<sub>3</sub> layer was deposited. On the other hand, when ALD process was conducted next to the QDs layer, the device performance was degraded because of shorten ligand for QDs. In order to prevent the degradation, the solution process for Al<sub>2</sub>O<sub>3</sub> deposition should be conducted next to the QDs layer. Thus, maximum luminance was increased by 138% (from 15,844 cd/㎡ to 21,503 cd/㎡). The results show a suitable method of Al<sub>2</sub>O<sub>3</sub> insulating layer deposition should be selected depending on device structures.
암 환자 돌봄제공자의 돌봄부담감과 대처방식이 소진에 미치는 영향
허수빈,신소영 한국직업건강간호학회 2019 한국직업건강간호학회지 Vol.28 No.2
Purpose: The aims of this study were to identify the effects of caring burden and the way of coping on burnout in caregivers of cancer patients. Methods: One-hundred and forty family caregivers of cancer patients who visited the cancer center at one tertiary hospital in metropolitan city B were included. The data collection was conducted from August 1st to October 1st, 2018, using a structured, self-reported questionnaire. The collected data were analyzed using descriptive statistics, t-test, one-way ANOVA, Pearson correlation coefficients, and multiple regression. Results: In the multiple regression analysis, the subject’s gender (β=.12, p=.028) and caring burden (β=.74, p<.001) had a significant effect on burnout. The explanatory power of the subject’s gender, education level, religion, caring time, number of family caregivers, monthly income, economic burden, expectation for treatment, caring burden, the way of aggressive coping, and the way of passive coping with burnout was 63.8% (F=23.28, p<.001). Conclusion: Reducing the caring burden in family caregivers of cancer patients will ultimately contribute to reducing burnout, thereby contributing to an improvement in the psychological well-being and quality of life of family members, as well as positively contributing to the recovery of patients.
허수빈,신재승,김태연,박성호,정운호,김현준,홍종암,김범수,박용섭,최병두,김종규,강성진 한국물리학회 2021 Current Applied Physics Vol.29 No.-
A ZnMgO and ZnO double-layered structure was prepared to create a stepwise interfacial electronic structure to improve the electron-injection and electron-transport behaviors in quantum-dot light-emitting diodes (QLEDs). The current density of the electron-only device (EOD) with ZnMgO/ZnO was higher than that of the EOD with only ZnMgO. The detailed QLED interfacial electronic structure was measured using X-ray and ultraviolet photoelectron spectroscopy. A stepwise interfacial electronic structure for electron injection and electron transport was observed connecting the aluminum cathode to the ZnMgO conduction band minimum (CBM) via the ZnO CBM. The QLEDs with the ZnMgO/ZnO double electron transport layer showed an improved performance, with a maximum luminance and current efficiency of 90,892 cd m 2 and 19.2 cd A 1, respectively. Moreover, the turn-on voltage of the device was significantly reduced to 2.6 V due to the stepwise interfacial electronic structure between the aluminum cathode and ZnMgO CBM. This research provides a useful method for developing highly efficient and low turn-on voltage QLEDs using a ZnMgO/ZnO double ETL for next-generation display.