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R. S. Saxena,R. K. Bhan,C. R. Jalwania,S. K. Lomash 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.4
This paper presents the results of a novel test structure for process control monitor for uncooled IR detector technology of microbolometer arrays. The proposed test structure is based on resistive network configuration. The theoretical model for resistance of this network has been developed using ‘Compensation’ and ‘Superposition’ network theorems. The theoretical results of proposed resistive network have been verified by wired hardware testing as well as using an actual 16x16 networked bolometer array. The proposed structure uses simple two-level metal process and is easy to integrate with standard CMOS process line. The proposed structure can imitate the performance of actual fabricated version of area array closely and it uses only 32 pins instead of 512 using conventional method for a 16x16 array. Further, it has been demonstrated that the defective or faulty elements can be identified vividly using extraction matrix, whose values are quite similar(within the error of 0.1%), which verifies the algorithm in small variation case(~1% variation). For example, an element, intentionally damaged electrically, has been shown to have the difference magnitude much higher than rest of the elements(1.45 a.u. as compared to ~ 0.25 a.u. of others), confirming that it is defective. Further, for the devices having non-uniformity ≤ 10%, both the actual non-uniformity and faults are predicted well. Finally, using our analysis, we have been able to grade(pass or fail) 60 actual devices based on quantitative estimation of non-uniformity ranging from < 5% to > 20%. Additionally, we have been able to identify the number of bad elements ranging from 0 to > 15 in above devices.
Saxena, R.S.,Bhan, R.K.,Jalwania, C.R.,Lomash, S.K. The Institute of Electronics and Information Engin 2006 Journal of semiconductor technology and science Vol.6 No.4
This paper presents the results of a novel test structure for process control monitor for uncooled IR detector technology of microbolometer arrays. The proposed test structure is based on resistive network configuration. The theoretical model for resistance of this network has been developed using 'Compensation' and 'Superposition' network theorems. The theoretical results of proposed resistive network have been verified by wired hardware testing as well as using an actual 16x16 networked bolometer array. The proposed structure uses simple two-level metal process and is easy to integrate with standard CMOS process line. The proposed structure can imitate the performance of actual fabricated version of area array closely and it uses only 32 pins instead of 512 using conventional method for a $16{\times}16$ array. Further, it has been demonstrated that the defective or faulty elements can be identified vividly using extraction matrix, whose values are quite similar(within the error of 0.1%), which verifies the algorithm in small variation case(${\sim}1%$ variation). For example, an element, intentionally damaged electrically, has been shown to have the difference magnitude much higher than rest of the elements(1.45 a.u. as compared to ${\sim}$ 0.25 a.u. of others), confirming that it is defective. Further, for the devices having non-uniformity ${\leq}$ 10%, both the actual non-uniformity and faults are predicted well. Finally, using our analysis, we have been able to grade(pass or fail) 60 actual devices based on quantitative estimation of non-uniformity ranging from < 5% to > 20%. Additionally, we have been able to identify the number of bad elements ranging from 0 to > 15 in above devices.
Singh, R.P.,Sastry, K.V.H.,Pandey, N.K.,Shit, N.G.,Agarwal, R.,Singh, R.,Sharma, S.K.,Saxena, V.K.,Jagmohan, Jagmohan Asian Australasian Association of Animal Productio 2011 Animal Bioscience Vol.24 No.8
The LDH isozymes are key catalysts in the glycolytic pathway of energy metabolism. It is well known that the distribution of the LDH isozymes vary in accordance with the metabolic requirements of different tissues. The substrates required for energy production change noticeably at successive stages of testes development suggesting a significant flexibility in the expression of glycolytic enzymes. Therefore, expression of LHDA and LDHB mRNAs was examined in adult and prepubertal quail testis. The mRNA of both LDHA and LDHB were expressed and no significant difference was observed in prepubertal testes. The mRNA levels of LDHB significantly increased during testicular development. In the adult testis, LDHA mRNA was not expressed. Expression studies revealed the presence of different LDH isozymes during testicular development. In contrast, electrophoresis of both testicular samples revealed only single band at a position indicative of an extreme type of LDH isozyme in quail testes. Furthermore, nucleotide and amino acid sequence analysis revealed significant similarity to chicken, duck and rock pigeon. These sequence results confirmed the similarity of LDHA and LDHB subunit protein in different avian species.
A New Method for the Synthesis of Heterocycles from o-Phenylenediamine
S. Saxena,M. Kidwai*,R. Mohan 대한화학회 2005 대한화학회지 Vol.49 No.3
다양한 헤테로고리화합물을 용매를 사용하지 않는 경제적이고, 매우 효율적으로 오르소-페닐린다이아민으로부터 합성 방법을 개발하였다. 마이크로파를 이용한 이 환경 친화적인 새로운 방법은 용매를 제거해야 하는 번거로움을 없애는 동시에 짧은 반응시간, 높은 수득률 그리고 균일한 가열효과 같은 장점을 가지고 있다.
Bhan, R.K.,Saxena, R.S. The Institute of Electronics and Information Engin 2002 Journal of semiconductor technology and science Vol.2 No.1
We present a simple experimental method for determination of limiting intrinsic fixed-pattern non-uniformity (NU) due to fabrication process in two-dimensional CCD multiplexers (MUXs) that are used for hybrid focal plane arrays. Here, this is done by determining separately the two NUs viz. that are $V_T$ dependent and $V_T$ independent. From these measurements, process dependent NU can be extracted. It is argued that $V_T$ dependent NU can be eliminated by designing novel input circuits whereas $V_T$ independent NU, primarily, dependent on process control and material variations may be reduced but cannot be eliminated completely and hence limits the FPA performance eventually.
Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor
Gautam, Rajni,Saxena, Manoj,Gupta, R.S.,Gupta, Mridula The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.5
In this paper, a high-sensitivity low power photodetector using double gate (DG) MOSFET is proposed for the first time using change in subthreshold current under illumination as the sensitivity parameter. An analytical model for optically controlled double gate (DG) MOSFET under illumination is developed to demonstrate that it can be used as high sensitivity photodetector and simulation results are used to validate the analytical results. Sensitivity of the device is compared with conventional bulk MOSFET and results show that DG MOSFET has higher sensitivity over bulk MOSFET due to much lower dark current obtained in DG MOSFET because of its effective gate control. Impact of the silicon film thickness and gate stack engineering is also studied on sensitivity.
Kumari, Vandana,Saxena, Manoj,Gupta, R.S.,Gupta, Mridula The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.2
The impact of Empty Space layer in the channel region of a Double Gate (i.e. ESDG) MOSFET has been studied, by monitoring the DC, RF as well as the digital performance of the device using ATLAS 3D device simulator. The influence of temperature variation on different devices, i.e. Double Gate incorporating Empty Space (ESDG), Empty Space in Silicon (ESS), Double Gate (DG) and Bulk MOSFET has also been studied. The electrical performance of scaled ESDG MOSFET shows high immunity against Short Channel Effects (SCEs) and temperature variations. The present work also includes the linearity performance study in terms of $VIP_2$ and $VIP_3$. The proper bias point to get the higher linearity along with the higher transconductance and device gain has also been discussed.
Assessment of Ambipolar Behavior of a Tunnel FET and Influence of Structural Modifications
Narang, Rakhi,Saxena, Manoj,Gupta, R.S.,Gupta, Mridula The Institute of Electronics and Information Engin 2012 Journal of semiconductor technology and science Vol.12 No.4
In the present work, comprehensive investigation of the ambipolar characteristics of two silicon (Si) tunnel field-effect transistor (TFET) architectures (i.e. p-i-n and p-n-p-n) has been carried out. The impact of architectural modifications such as heterogeneous gate (HG) dielectric, gate drain underlap (GDU) and asymmetric source/drain doping on the ambipolar behavior is quantified in terms of physical parameters proposed for ambipolarity characterization. Moreover, the impact on the miller capacitance is also taken into consideration since ambipolarity is directly related to reliable logic circuit operation and miller capacitance is related to circuit performance.
Narang, Rakhi,Saxena, Manoj,Gupta, R.S.,Gupta, Mridula The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.3
This work presents a comparative study of four Double Gate tunnel FET (DG-TFET) architectures: conventional p-i-n DG-TFET, p-n-p-n DG-TFET, a gate dielectric engineered Heterogate (HG) p-i-n DG-TFET and a new device architecture with the merits of both Hetero Gate and p-n-p-n, i.e. HG p-n-p-n DG-TFET. It has been shown that, the problem of high gate capacitance along with low ON current for a p-i-n TFET, which severely hampers the circuit performance of TFET can be overcome by using a p-n-p-n TFET with a dielectric engineered Hetero-gate architecture (i.e. HG p-n-p-n). P-n-p-n architecture improves the ON current and the heterogeneous dielectric helps in reducing the gate capacitance and suppressing the ambipolar behavior. Moreover, the HG architecture does not degrade the output characteristics, unlike the gate drain underlap architecture, and effectively reduces the gate capacitance.