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( Doo Hyun Kim ),( Jong Ho Lee ),( Sung Chul Kim ) 한국안전학회(구-한국산업안전학회) 2007 International Journal of Safety Vol.6 No.2
This paper aims at the statistical analysis of electrical fire and classification of electrical fire causes to collect electrical fires data efficiently. Electrical fire statistics are produced to monitor the number and characteristics of fires attended by fire fighters, including the causes and effects of fire so that action can be taken to reduce the human and financial cost of fire. Electrical fires make up the majority of fires in Korea(including nearly 30% of total fires according to recent figures), The incorrect and biased knowledge for electrical fires changed the classification of certain types of fires, from non-electrical to electrical. It is convenient and required to develop the standardized form that makes, in the assessment of the cause of electrical fires, the fire fighters directly ticking the appropriate box on the fire report form or making an assessment of a text description. Therefore, it is highly recommended to develop electrical fire cause classification and electrical fire assessment on the fire statistics in order to categorize and assess electrical fires exactly. In this paper newly developed electrical fire cause classification structure, which is well-defined hierarchical structure so that there are not any relationship or overlap between cause categories, is suggested. Also fire statistics systems of foreign countries are introduced and compared.
P/E Transient Modeling of NAND SONOS Flash Memories
Doo-Hyun Kim,Seongjae Cho,Byung-Gook Park 대한전자공학회 2007 ITC-CSCC :International Technical Conference on Ci Vol.2007 No.7
This paper presents a detailed study of the program/erase (P/E) dynamics in NAND SONOS flash memories. By calculating the oxide field and tunneling currents, we evaluate the charge trapping mechanism. We calculate transient P/E VT windows with the ONO fields and tunneling currents. All the parameters were obtained by physics-based equations and without any fitting parameters or optimization steps. The results agree with conventional SONOS flash memory P/E characteristics in FN regime. This modeling accounts for the VT shift as a function of applied gate voltage, time, and thickness of silicon oxide and silicon nitride layers, and can be used for optimizing the ONO geometry and parameters for maximum performance.
Direct Detection of Drug-Resistant Hepatitis B Virus in Serum Using a Dendron-Modified Microarray
( Doo Hyun Kim ),( Hong Seok Kang ),( Seong-suk Hur ),( Seobo Sim ),( Sung Hyun Ahn ),( Yong Kwang Park ),( Eun-sook Park ),( Ah Ram Lee ),( Soree Park ),( So Young Kwon ),( Jeong-hoon Lee ),( Kyun-hw 대한간학회 2018 Gut and Liver Vol.12 No.3
Background/Aims: Direct sequencing is the gold standard for the detection of drug-resistance mutations in hepatitis B virus (HBV); however, this procedure is time-consuming, labor-intensive, and difficult to adapt to high-throughput screening. In this study, we aimed to develop a dendron-modified DNA microarray for the detection of genotypic resistance mutations and evaluate its efficiency. Methods: The specificity, sensitivity, and selectivity of dendron-modified slides for the detection of representative drug-resistance mutations were evaluated and compared to those of conventional slides. The diagnostic accuracy was validated using sera obtained from 13 patients who developed viral breakthrough during lamivudine, adefovir, or entecavir therapy and compared with the accuracy of restriction fragment mass polymorphism and direct sequencing data. Results: The dendron-modified slides significantly outperformed the conventional microarray slides and were able to detect HBV DNA at a very low level (1 copy/μL). Notably, HBV mutants could be detected in the chronic hepatitis B patient sera without virus purification. The validation of our data revealed that this technique is fully compatible with sequencing data of drug-resistant HBV. Conclusions: We developed a novel diagnostic technique for the simultaneous detection of several drug-resistance mutations using a dendron-modified DNA microarray. This technique can be directly applied to sera from chronic hepatitis B patients who show resistance to several nucleos(t)ide analogues. (Gut Liver 2018;12:331-341)
GUI-based Power Consumption Analysis Tool for Lower Power Embedded S/W Development in ESTO
Doo-Hyun Kim,Keun Soo Lee,Duk-Kyun Woo,Changhee Jung 대한임베디드공학회 2007 대한임베디드공학회논문지 Vol.2 No.3
In this paper, we present a time-triggered mechanism for providing energy consumption profiles in the level of C functions. The similar mechanisms have already been introduced at the previous researches such as PowerScope and ePRO. Instead, we, in this paper, introduce our efforts to extend these researches to incorporate power domains and DVS(Dynamic Voltage Scaling), then to provide GUI-based tool as a plug-in to ESTO which is an IDE for Embedded S/W development based on Eclipse. From our experimental results, we could conclude that our approach worked and produced consistent energy consumption profiles on the DVS-applied program codes, and also displayed function level and time domain power consumption information with diverse presentation skills such as tables, phi-chart, bar-chart, 2-D graphs, consequently, is expected to provide more ease-to-use and productive IDE for lower power embedded S/W developers.
Retention Model of NAND-type Nitride-Based Charge Trapping Flash Memory
Doo-Hyun Kim,Gil Sung Lee,Jung Hoon Lee,Il Han Park,Seong-Jae Cho,Jang-Gn Yun,Dong Hua Li,Yoon Kim,Byung-Gook Park 대한전자공학회 2008 ICEIC:International Conference on Electronics, Inf Vol.1 No.1
This paper presents a detailed study of the retention characteristics in scaled SONOS charge trapping flash memories. By calculating the oxide field and tunneling currents, we evaluated charge retention characteristics. We calculated transient retention dynamics with the ONO fields, trapped charge, and tunneling currents. All the parameters were obtained by physics-based equations and without any fitting parameters or optimization steps. The results can be used with nano-scale nonvolatile memory in deciding scaling down limits. This modeling accounts for the VT shift as a function of quantity of trapped charge, time, and thickness of silicon oxide and silicon nitride layers, and can be used for optimizing the ONO geometry and parameters for maximum performance.