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Dither 효과를 이용한 서어보 위치 제어계의 응답특성 개선
홍창희,장기효 동아대학교 공과대학 부설 한국자원개발연구소 1987 硏究報告 Vol.11 No.1
The position control system of DC servomotor using dither effect improves the characteristics of response, but oscillation in setting the desired position control is caused by jerking motion in the steady state. A method for supressing the jerking motion using dither effect is proposed. By this method compensating the characteristics of response in the case of setting the desired position control, we can verify the useful-ness of this method in obtaining the best characteristics of position control response in the position control system.
Al-Al₂O₃-Au 構造에서 電氣傳導度와 메모리 特性에 관한 硏究
洪昌熹 동아대학교 공과대학 부설 한국자원개발연구소 1982 硏究報告 Vol.6 No.1
The electrical properties of Al-Al₂O₃-Au MIM devices have been investigated. This devices with anodicaly grown dense Al₂O₃ layers up to 300A° in thickness give monotonic current-voltage characteristics. After forming this devices exhibit current-voltage curves with voltage controlled negative resistance and memory phenomena. And also after forming, Au ion diffusion within Al₂O₃ insulation layer, crystal defects of thin insulation film, and some localizing changes such as unstoichio-metric composition may be observed. Consequently, we conclude that the mechanism of conductivity for MIM devices is band model.
Si 웨이퍼 내의 깊은 준위 분포 특성 파악에 관한 연구
홍창희,윤기정,안기형 동아대학교 공과대학 부설 한국자원개발연구소 1988 硏究報告 Vol.12 No.2
Distributions of deep levels are studied in the n-type Si wafer which are introduced during fabrication with e-beam deposition by using DLTS technique. Test is carried out on the Schottky diode. Metalization of the diode is done by e-beam deposition before of after electron irradiation. Deep levels of the defects are measured by using various metal such as Pd/Au, Au, Pd, Ti, Mo and Hf, and by changing the annealing temperature. It is approved that some defects are introduced in the neighbor of interface of silicon and metal by e-beam deposition, and main defect of them is E(0.42) level. In the resuts, two types of the deep level are observed ; one type is that is independent of electron irradiation, for example, E(0.42) level which is observed near the interface ; another type is that is observed only in the diode deposited by e-beam after electron irradiation, for example, E(0.18) level and so on which are observed farther from the interface. It may be the reason that interaction is presented between defects from Pd, at least, and prior defects.