추가 열처리에 따른 Ir 삽입 니켈 실리사이드의 미세 구조 변화 (초)

윤기정,송오성,김종률,최용윤 대한금속재료학회 2007 대한금속재료학회 학술대회 개요집 Vol.2007 No.1

Pt와 Ir 첨가에 의한 니켈모노실리사이드의 고온 안정화

윤기정,송오성,Yoon, Ki-Jeong,Song, Oh-Sung 한국마이크로전자및패키징학회 2006 마이크로전자 및 패키징학회지 Vol.13 No.4

We fabricated thermally evaporated 10 nm-Ni/(poly)Si, 10 nm-Ni/l nm-Ir/(poly)Si and 10 nm-Ni/l nm-Pt/(poly)Si films to investigate the thermal stability of nickel monosilicides at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides of 50 nm-thick were formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to examine sheet resistance. A scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An X-ray diffractometer and an Auger depth profiler were used for phase and composition analysis, respectively. Nickel silicides with platinum have no effect on widening the NiSi stabilization temperature region. Nickel silicides with iridium farmed on single crystal silicon showed a low resistance up to $1200^{\circ}C$ while the ones formed on polycrystalline silicon substrate showed low resistance up to $850^{\circ}C$. The grain boundary diffusion and agglomeration of silicides lowered the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

장려상-대공간 구조

윤기정,김현정,고용,Yun, Gi-Jeong,Kim, Hyeon-Jeong,Go, Yong 한국건축구조기술사회 2007 건축구조 Vol.14 No.3

연하장애를 가진 뇌졸중 환자에서 비위관 삽입이 연하 기능에 미치는 영향

윤기정,최경효,양서연 대한연하장애학회 2015 대한연하장애학회지 Vol.5 No.2

Objective: To determine whether the use of a nasogastric (NG) tube influenced swallowing function in stroke patients with dysphagia. Method: Thirty stroke patients with dysphagia (20 men and 10 women, average age=61.4±15.8 years) were included. All patients used NG tubes for nutrition supply and did not show massive aspiration on videofluoroscopic swallowing study (VFSS). VFSS was done using barium (5 ml each) as a contrast medium to evaluate swallowing function. The swallowing trigger time, pharyngeal transit time, duration of pharyngeal response were measured with and without the NG tube. Presence of residual material, aspiration, and movement pattern of the hyoid (degree of anterior and superior displacement) were also recorded using VFSS with and without the NG tube. Result: Swallowing trigger time decreased slightly after removal of the NG tube, but the reduction was not statistically significant (P=0.28). Pharyngeal transit time and duration of pharyngeal response showed no significant change after removal of the NG tube. The presence of aspiration did not change either. Anterior and superior excursion of the hyoid bone did not differ statistically with or without the NG tube. More residual material was found after swallowing with the NG tube in place (P=0.04). Conclusion: NG tube placement did not influence laryngeal elevation, swallowing reflex, and aspiration severity in stroke patients with dysphagia. Therefore, direct swallowing therapy with NG tube placement may be a safe training method.

EMC 시뮬레이션에 의한 AlGaAs 내 전자의 에너지

윤기정 동의공업대학 2000 論文集 Vol.26 No.1

In this paper, free electron energies in AlGaAs bulk due to electric field using EMC(Ensemble Monte Carlo) simulation are described. They are calculated as a function of Al mole fractions of AlGaAs, barrier widths of AlGaAs bulk, temperatures, and electric fields. Mole fractions are varied with x=0.3, 0.4, 0.5 and 0.7, barrier widths are from 100 to 500 [Å], and temperatrues are between 77 and 300 [K]. In the results of simulations, electron energy depends on barrier width and Al mole fraction, significantly, It is increased linearly with electric field, when barrier width is 100 [Å] and, when x = 0.3. And, when x = 0.4, it is increased with nearly linearity, when x = 0.5, it is with nearly non-linearity, and when x=0.7, it is with perfect non-linearity. Linearity is decreased with rise of temperature and with enhancement of barrier width. And electron energy with below x=0.4 is larger than one with above x=0.5. Also, electron energy with higher temperature is lager than that with lower one. Electric field effects stronger than temperature on electron energy, while effect of temperature decreases with stronger electric field. In case of indirect transition type, that is, above x=0.5, transition type is more dominant in electron energy than electric field or temperature.

GaAs/AlGaAs 양자 우물 구조의 제한적 특성 해석

윤기정,김원호 동의공업대학 1999 論文集 Vol.25 No.1

The impact ionization rates of GaAs/AlGaAs quantum well at temperature 77, 100, 150, 200, 250, 300 [K] are calculated. These are important parameters to design the infrared detector APD. The effects on the impact ionization rates by the parameters of quantum well structure, such as well-width, barrier-width, barrier-height and doping density m the well, are analyzed, using Ensemble Monte Carlo method, scattering and tunneling effects. As the width of the quantum well increases, the impact ionization rate increases in the range of the small well width but gradually the increment slows down. Due to the effect of the energy of the injected electrons into the well from the barrier, as well as the tunneling effect in the barrier, the impact ionization rate increases with the range of the smaller barrier width and decreases with the range of the larger barrier width. Thus, there exists a barrier width to maximize the impact ionization rate. The impact ionization rate is very sensitive to the variation of the doping density. It is found that there is a limit to the doping density to confine the electrons in the quantum well effectively.

GaAs MIS 구조의 C-V 특성의 온도 변화 측정

윤기정,강양원,홍창희 동아대학교 공과대학 부설 한국자원개발연구소 1991 硏究報告 Vol.15 No.1

In this paper, we described the C-V(Capacitance-Voltage) characteristics in the GaAs MIS(Metal-Insulator-Semiconductor) structure. In particular, we took the interest in the shift of flat-band voltage due to the cooling down the semiconductor to the low temperature. The change of the work function difference is depend on the variation of the temperature. Furthermore, when the deep states in the semiconductor are near the interface between the insulator and semiconductor, the effects of them are superior to work function difference. As the results, the deviation of the V_(FB) is about 0.7 volts as the temperature decrease from 300 [k] to 130 [K]

돈쭐

윤기정 수필미학 2023 수필미학 Vol.40 No.-

한국 여성 직장인 및 직장인 배우자의 고위험군 인유두종 바이러스 유병률

윤기정 대한임상건강증진학회 2009 Korean Journal of Health Promotion Vol.9 No.2

Background This study was conducted to evaluated the prevalence of human papillomavirus(HPV) among the female employees and employees' partner in Korea. And this study was conducted to evaluate relationship between HPV and cervical cytology. Methods HPV test of 16,937 study population conducted using Hybrid-Capture II assay(HC-II). The study population were people who visited hospital-based medical screening center from January to December 2007 and all were female employees or employees' partner. Results HPV positive subjects are 1,936 people among total 16,937 study population. Crude prevalence of HPV was 11.4%, and standardized prevalence was 9.49%. The prevalence of 20-29 age group and 50-59 age group were relatively high than other groups. HPV prevalence was significantly different between age groups. The odd ratio of HPV positve and cervical cytology positive was 48.0 (95% CI 27.1-84.6). Conclusions The standardized prevalence of high risk human papillomavirus was 9.49% among the female employees and employees' partner in Korea. 연구배경 : 한국 여성 직장인 및 직장인 배우자를 대상으로 인유두종 바이러스 유병률을 조사하고, 이를 한국 일반 인구로 표준화한 표준화 유병률을 제시하고자 하였다. 인유두종 바이러스 유병률과 자궁경부 세포진검사와의 연관을 함께 구명하였으며, 비교를 위해 개인비용 종합건강진단 수검자의 결과를 함께 제시하였다. 방 법 : 2007년 1월부터 2007년 12월까지 일개대학병원 종합건진센터를 방문하여 직장에서 지불해주는 비용으로 정기 종합건강진단을 받은 여성 직장인 및 직장인 배우자 16,937명을 연구대상으로 하였으며, Hybrid-Capture II assay(HC-II) 방법을 이용하여 인유두종 바이러스 양성유무를 판단하여 유병률을 조사하였다. 결 과 : 여성 직장인 및 배우자로 구성된 연구대상자 16,937명중 1,936명이 고위험도 인유두종 바이러스 양성을 나타내 11.4%의 유병률을 보였다. 2005년 한국 여성인구를 표준인구로 한 표준화 유병률은 9.49% 였다. 특히 20~29세군(15.3%)과 50~59세군(17.7%)이 다른 연령군에 비해 유병률이 높았다. 연령군간 인유두종 바이러스 유병률의 차이는 통계적으로 유의하였다(P-value<0.01). 여성 직장인 및 배우자의 인유두종 바이러스 양성과 자궁경부 세포진검사 유소견과의 교차비는 48.0(95% 신뢰구간 27.1-84.6)이었다. 결 론 : 한국 여성 직장인 및 배우자로 구성된 16,937명 여성의 고위험군 인유두종 바이러스 표준화 유병률은 9.49%이다.

Microstructure Evolution of the Ir-inserted Ni Silicides with Additional Annealing

윤기정,송오성 대한금속·재료학회 2009 METALS AND MATERIALS International Vol.15 No.1

Thermally-evaporated 10 nm-Ni/1 nm-Ir/(poly)Si structures were fabricated in order to investigate the thermal stability of Ir-inserted nickel silicide after additional annealing. The silicide samples underwent rapid thermal annealing at 300℃ to 1200℃ for 40 s, followed by 30 min annealing at the given RTA temperatures. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates, mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution x-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope were used to determine the cross-section structure and surface roughness. The silicide, which formed on single crystal silicon substrate with surface agglomeration after additional annealing, could defer the transformation of Ni(Ir)Si to Ni(Ir)Si2 and was stable at temperatures up to 1200℃. Moreover, the silicide thickness doubled. There were no outstanding changes in the silicide thickness on polycrystalline silicon. However, after additional annealing, the silicon-silicide mixing became serious and showed high resistance at temperatures >700℃. Auger depth profiling confirmed the increased thickness of the silicide layers after additional annealing without a change in composition. For a single crystal silicon substrate, the sheet resistance increased slightly due to the significant increases in surface roughness caused by surface agglomeration after additional annealing. Otherwise, there were almost no changes in surface roughness on the polycrystalline silicon substrate. The Ir-inserted nickel monosilicide was able to maintain a low resistance in a wide temperature range and is considered suitable for the nano-thick silicide process. Thermally-evaporated 10 nm-Ni/1 nm-Ir/(poly)Si structures were fabricated in order to investigate the thermal stability of Ir-inserted nickel silicide after additional annealing. The silicide samples underwent rapid thermal annealing at 300℃ to 1200℃ for 40 s, followed by 30 min annealing at the given RTA temperatures. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates, mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution x-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope were used to determine the cross-section structure and surface roughness. The silicide, which formed on single crystal silicon substrate with surface agglomeration after additional annealing, could defer the transformation of Ni(Ir)Si to Ni(Ir)Si2 and was stable at temperatures up to 1200℃. Moreover, the silicide thickness doubled. There were no outstanding changes in the silicide thickness on polycrystalline silicon. However, after additional annealing, the silicon-silicide mixing became serious and showed high resistance at temperatures >700℃. Auger depth profiling confirmed the increased thickness of the silicide layers after additional annealing without a change in composition. For a single crystal silicon substrate, the sheet resistance increased slightly due to the significant increases in surface roughness caused by surface agglomeration after additional annealing. Otherwise, there were almost no changes in surface roughness on the polycrystalline silicon substrate. The Ir-inserted nickel monosilicide was able to maintain a low resistance in a wide temperature range and is considered suitable for the nano-thick silicide process.