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한철희,김충기,서광석,Han, Cheol-Hui,Kim, Chung-Gi,Seo, Gwang-Seok 대한전자공학회 1981 전자공학회지 Vol.18 No.1
양호한 특성의 I2L 구조를 구현하기 위한 새로운 공정을 제안하였다. 이 구조에서는, extrinsic base 의 불순물 농도가 높으며, 또한 collector는 불순물 농도가 낮은 intrinsic base와 self align된다. 제안한 공정에서는 spin-on source를 확산원으로 사용하였고, mask 단계를 줄이기 위하여 열처리로 단단해진 spin-on source를 확산 mask로 사용하였다. 이 공정에 의하여 13단 ring oscil-lator를 포함한 시험소자를 6.5μm의 epi 충을 갖는 n/n+ silicon wafer 상에 제작하였다. 제작한 시험소자의 특성은, collector가 세 개인 I2L의 경우 npn transistor의 상향 전류이득은 최대치가 8이었으며, collector가 하나인 I2L의 속도전력적과 최소 전달 지연시간은 각각3.5 pJ과 50ns 이었다. A new I2L process for a high performance I2L structure is proposed. The modifiedstructure consists of a heavily doped extrinsic base and lowly doped intrinsic base where the collector regions are self-alignment with the intrinsic base regions. The proposed process untilizes spin-on sources as the diffusion sources and the self-alignment of collectors is achieved by using the hardened spin-on source as a diffusion mask. Test devices including a 13-stage ring oscillator have been fabricated by the proposed process on n/n+ silicon wafers with 6.5$\mu$m epitaxial layer. The maximum upward current gain of npn transistors is 8 for a three collector I2L cell. The speed-power product and minimum propagation delay for a one collector structure are 3.5 pJ and 50 ns, respectively.
조진수,한승호,한철희,Jo, Jin-Su,Han, Seung-Ho,Han, Cheol-Hui 대한기계학회 2002 大韓機械學會論文集B Vol.26 No.8
A numerical and experimental study on the flow fields behind the fan outlet was carried out to improve the performance of a conventional fan-sink(fan and heat sink). Conventional fan-sinks have a heat sink of which fin configurations tend to increase the flow resistance, thus decreasing the performance and the cooling capabilities of a fan-sink. Lifting surface method is used for the prediction of flow fields behind the fan outlet. Oil-dot flow visualization technique is applied for the validation of numerical results. The numerical results and experimental data show agreement each other. A conventional heat sink is modified and redesigned using flow patterns behind the fan outlet. The newly designed heat sink has the configuration of curved fins which minimize flow resistance. It showed improvements in both cooling: capabilities and volumetric flow rate compared to the conventional one.
미세 연소기 개발 (II) - 미세동력 장치용 미세 전극의 제작과 성능평가 -
권세진,이대훈,박대은,윤준보,한철희,Gwon, Se-Jin,Lee, Dae-Hun,Park, Dae-Eun,Yun, Jun-Bo,Han, Cheol-Hui 대한기계학회 2002 大韓機械學會論文集B Vol.26 No.4
Micro electric spark discharge device was fabricated on a FOTURAN glass wafer using MEMS processing technique and its performance of electron discharge and subsequent formation of ignition kernel were tested. Micro electric spark device is an essential subsystem of a power MEMS that has been under development in this laboratories. In a combustion chamber of sub millimeter scale depth, spark electrodes are formed by electroplating Ni on a base plate of FOTURAN glass wafer. Optimization of spark voltage and spark gap is crucial for stable ignition and endurance of the electrodes. Namely, wider spark gaps insures stable ignition but requires higher ignition voltage to overcome the spark barrier. Also, electron discharge across larger voltage tends to erode the electrodes limiting the endurance of the overall system. In the present study, the discharge characteristics of the proptotype ignition device was measured in terms of electric quantities such as voltage and currant with spark gap and end shape as parameters. Discharge voltage shows a little decrease in width of less than 50㎛ and increases with electrode gap size. Reliability test shows no severe damage over 10$\^$6/ times of discharge test resulting in satisfactory performance for application to proposed power MEMS devices.