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국내에서 판매되는 어린이용 비타민·무기질 보충제의 종류와 함량
박하민(Park, Ha Min),전상아(Jeon, Sang A),이서진(Lee, Seo Jin),김지현(Kim, Jihyun),현태선(Hyun, Taisun) 충북대학교 생활과학연구소 2018 생활과학연구논총 Vol.22 No.1
This study examined the types of vitamin and mineral supplements sold for children in Korea and assessed the nutrient composition and the appropriateness of these products. A total of 343 vitamin and mineral supplements were identified using the search keyword “kids” on the homepage of the information portal managed by the Ministry of Food and Drug Safety. Data regarding the name, manufacturer, nutrient composition, nutrient content, and usage were obtained. Among the 343 products, 14.9% contained vitamins only, and 15.4% comprised minerals only. Thirty products (8.7% of total) were single vitamin compositions, and 48 were single mineral supplements. The most common nutrients to be found were vitamin C (70.0%) in single vitamin products, and calcium (50%) and zinc (50%) in single-mineral products. Vitamin D (64.9%) and vitamin C (56.2%) were the most frequently found, and zinc (58.9%) was the most prevalent mineral in the supplements that combined multivitamins and minerals. Although in more than 50% of the products, the suggested dosages were less than 150% of the Recommended Nutrient Intake (RNI) or the Adequate Intake for a daily dose, some of the products were found to be inappropriate for use. Amounts greater than the Tolerable Upper Intake Levels were found in 14 supplements containing zinc, 12 containing folic acid, and 9 containing magnesium. Further, 48 products consisted of vitamin C in amounts greater than 250% of RNI. The results of this investigation suggest, therefore, that parents should consult a trained dietician or should themselves have adequate knowledge about the nutrient composition of supplements and be capable of selecting the appropriate supplement for each child from the variety of vitamin and mineral products that are available at the counter
상사-부하 간 애매한 표현과 직설적 비판이 공손성과 커뮤니케이션 능력에 대한 인식에 미치는 영향 한-미 간 비교문화연구
범기수 ( Khi Su Beom ),박하민 ( Ha Min Park ) 한국PR학회 2014 PR연구 Vol.18 No.1
The purpose of this study is to explore differences/similarities between Korean and the U.S. people``s perception on equivocated messages in terms of politeness and communication competence. We used an experimental method in which college students in Korea and the U.S. were asked to imagine themselves in different manipulated scenariosequivocation used by a supervisor or a subordinate, and seek to answer the question of whether euquivocal messages is perceived differently in terms of participants`` evaluation on the politeness and communication competence. It was found that both Korean and the U.S. participants perceived supervisor``s and subordinate``s equivocal messages more polite than direct criticism. However, in Korea the equivocal message was considered as higher communication competence, whereas in the U.S. there was no difference between equivocal message and direct criticism. This study implicated that the differences of cultural values, such as individualism/ collectivism, power distance and high/low context culture, are important factor to understand the organizational communication and perception.
넓은 출력 전압 범위를 가지는 50kW급 급속충전용 DC-DC 컨버터의 최적 토폴로지 비교 및 선정
김진출(Jin-Chul Kim),박하민(Ha-Min Park),이주(Ju Lee),박진홍(Jin-Hong Park),임태욱(Tae-Uk Im),이재범(Jae-Bum Lee) 대한전기학회 2024 전기학회논문지 Vol.73 No.5
The introduction of high-voltage battery vehicles and the necessity of 400 kW-capacity EV ultra-fast-charging systems emphasize the requirement for DC-DC converters with wide output voltage ranges and high output capabilities Previously, 10 kW DC-DC converters were parallelly expanded to meet fast charging demands, but for 400 kW chargers, this approach necessitates excessive modules, increasing maintenance and complexity in system configuration and control. This paper analyzed DC-DC converter topologies, to establish an optimized design for DC-connected fast charging specifications. It proposes a topology that addresses the shortcomings of existing ones, designed to operate differently secondary side configuration of the converter for varying battery charging voltages. The proposed 50 kW DC-DC converter, when expanded for fast charging, is expected to offer substantial advantages in maintenance and system configuration.
넓은 출력 전압 범위를 가지는 50kW급 급속충전용 DC-DC 컨버터의 최적 토폴로지 비교 및 선정
김진출(Jin-Chul Kim),박하민(Ha-Min Park),이주(Ju Lee),박진홍(Jin-Hong Park),임태욱(Tae-Uk Im),이재범(Jae-Bum Lee) 대한전기학회 2024 전기학회논문지 Vol.73 No.5
The introduction of high-voltage battery vehicles and the necessity of 400 kW-capacity EV ultra-fast-charging systems emphasize the requirement for DC-DC converters with wide output voltage ranges and high output capabilities Previously, 10 kW DC-DC converters were parallelly expanded to meet fast charging demands, but for 400 kW chargers, this approach necessitates excessive modules, increasing maintenance and complexity in system configuration and control. This paper analyzed DC-DC converter topologies, to establish an optimized design for DC-connected fast charging specifications. It proposes a topology that addresses the shortcomings of existing ones, designed to operate differently secondary side configuration of the converter for varying battery charging voltages. The proposed 50 kW DC-DC converter, when expanded for fast charging, is expected to offer substantial advantages in maintenance and system configuration.
Study on Impact-Ionization MOS for 1T-DRAM Operation
Jangho Jung(정장호),Hamin Park(박하민) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
In this paper, we implemented and analyzed the impact-ionization MOS (I-MOS) for 1T-DRAM using TCAD simulation. Based on a TCAD model with reliability ensured through calibration, we demonstrated the feasibility of 1T-DRAM operation through I-MOS parameter optimization and additional Boron doping in the channel region to induce the hysteresis. Furthermore, we analyzed the drain current variation and memory window through a region-specific impact ionization and charge transport analysis of the I-MOS device.
Gate-All-Around FET Inner Spacer 두께에 따른 Parasitic Capacitance 모델링
강지훈(Jihun Kang),김현곤(Hyeongon Kim),박하민(Hamin Park) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
According to the scaling of transistors, the impact of parasitic capacitance is continuously increasing. In the case of gate-all-around FET (GAAFET), various parasitic capacitance elements exist due to its complex three-dimensional structure. In this paper, we conducted modeling of extension capacitance (Cext) in GAAFET based on different inner spacer thickness (TIS). We extracted Cext of GAAFET using TCAD simulation and carried out Cext modeling using elliptical coordinates to the Cartesian system. To establish the model, we divided the distribution of electric fields composing Cext into three regions and ensured consistency between the models of changes in these three regions with TIS and TCAD simulation results. Finally, we analyzed the trend of C<SUB>ext</SUB> changes based on the TIS using the model.
Sang-Il Pyeon(편상일),Seong-Min Park(박성민),Dae-Ung Jeong(정대웅),Hui-Seong Ok(옥희성),Hamin Park(박하민) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
Following developments in the display industry, research and development related to the application of a-IGZO material are also taking place in the memory field. In this paper, we analyzed the threshold voltage reliability and hump effect of a-IGZO devices under voltage and illumination stress. We comprehensively analyzed the changes in the threshold voltage and the magnitude of the hump effect over time under the situation where negative voltage stress is applied while light stress is intermittently present, and we investigate an oxygen vacancy mechanism to explain the behavior.
Punch-Through Path 제어 기반의 1T-DRAM 소자
조승준(Seung-Jun Cho),이도현(Do-Hyun Lee),박하민(Hamin Park) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
As the integration density of conventional 1T-1C DRAM has reached its limits, a new 1T-DRAM structure for higher integration density has been proposed. In this paper, we propose a new 1TDRAM device structure based on the punch-through path control utilizing band-to-band tunneling, and validate the DRAM operation of this structure through TCAD simulation.