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민남기,이성재,박하영 대한전자공학회 1995 전자공학회논문지-A Vol.32 No.7
A new device structure has been developed for p-i-n switches. In this structure, the phosphorus-diffused n$^{+}$ layter adjacent to the boron-doped anode is used to short the p$^{+}$ anode-channel(i-region). This change in the anode electrode structure results in a significant improvement in the threshold voltage-to-holding voltage($V_{Th}/V_{h}$) ratio, which is due to the suppression of the hold injection from the anode by the n$^{+}$ layer. The shorted anode p-i-n devices of a 100 .mu.m channel length show an extremely high threshold voltage in the 250~300 V range and a low holding voltage in the 5~9 V range. These features of the device are expected to acdelerate their practical application to power switching circuits.
민남기,권광호,Alexander Efremov,이현우,김만수,김성일 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.5
This work reports investigations of the etch characteristics and mechanisms for Ge$_2$Sb$_2$Te$_5$ (GST), SiO$_2$ and a photoresist (PR) in a Cl$_2$/Ar inductively coupled plasma. The etch rates were measured as functions of the Cl$_2$/Ar mixing ratio (43 -- 86 \% Ar), the gas pressure (4 -- 10 mTorr), the source power (400 -- 700 W), and the bias power (50 -- 300 W). Langmuir probe diagnostics and 0-dimensional plasma modeling provided information on the plasma parameters and plasma active species. The behavior of the GST etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. The etching behavior of the PR is due to both chemical and physical etch pathway, while the etching behavior of the SiO$_2$ is quite close to that for GST. This can be connected to the effective destruction of Si-O bonds in the thin surface layer by ion bombardment and to the reduction of SiO$_2$ by C$_x$H$_y$ radicals resulting from the decomposition of the PR. This work reports investigations of the etch characteristics and mechanisms for Ge$_2$Sb$_2$Te$_5$ (GST), SiO$_2$ and a photoresist (PR) in a Cl$_2$/Ar inductively coupled plasma. The etch rates were measured as functions of the Cl$_2$/Ar mixing ratio (43 -- 86 \% Ar), the gas pressure (4 -- 10 mTorr), the source power (400 -- 700 W), and the bias power (50 -- 300 W). Langmuir probe diagnostics and 0-dimensional plasma modeling provided information on the plasma parameters and plasma active species. The behavior of the GST etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. The etching behavior of the PR is due to both chemical and physical etch pathway, while the etching behavior of the SiO$_2$ is quite close to that for GST. This can be connected to the effective destruction of Si-O bonds in the thin surface layer by ion bombardment and to the reduction of SiO$_2$ by C$_x$H$_y$ radicals resulting from the decomposition of the PR.
閔南基,朴河鎔 동국대학교 1983 論文集 Vol.22 No.-
In this paper, the theoretical studies on the electrical conduction mechanisms of high-resistivity semiconductors are made in two cases: (1) semi-insulating semiconductor contained a recombination center, which is partially occupied by electrons in thermal equilibrium, and (2) relaxation case semiconductor. In the first case, a general model for the conduction mechanism and an occurrence of current-controlled negative resistance (CCNR) are developed by taking into account the injection level dependence of the drift length of injected electrons and holes. In the second case, the forward and reverse current-voltage characteristics of p^+-i-n^+ structure in which i-region consists of relaxation semiconductor are discussed and the definite explanation for the sublinear behavior of the characteristics is given.
산약(山藥)이 생쥐의 기아 stress 에 미치는 영향
민남기,이태희,Min, Nam-Ki,Lee, Tae-Hee 대한한의학방제학회 2006 大韓韓醫學方劑學會誌 Vol.14 No.2
Objectives : We Investigated the effect of Dioscoreae Rhizoma(山藥) on the change of the corticosterone and the rectal temperature(直腸溫渡) of the mice induced by starvation stress(創戰 스트레스). Methods : After administration of Dioscoreae Rhizoma (0.25g/kg, 0.5g, 1.0g/kg, 3g/kg) three times, mice were starved. The corticosterone and rectal temperature were measured after 36.5 hours starvation stress. Results : The plasma cortiosterone levels in the S-2, S-3 and S-4 group were decreased significantly comparing with the control group (P<0.01) after 36.5 hours starvation stress. and rectal temperature was decreased in the control goup comparing with the normal group, but there is no significant change in the Dioscoreae Rhizoma treated group. Conclusion : it might be recognized that Dioscoreae Rhizoma has preventive-effect against starvation stress and also it might be needed further study in various viewpoints. Objectives : This study was disegned to elucidate the short term effect of Rossa rugosae Radix on proliferation. differentiation and maturation of 3T3-L1 Preadipocyte. Methods: 3T3-L1 preadipocytes obtained from Korean Cell Line Bank were cultured in a D ulbecco’ s modified eagle medium(MEM) culture solution containing 10% fetal bovine serum(FBS) and various concentrations of aqueous extract of Rossa rugosae Radix.. The short term effect of the extract of Rossa rugosae Radix on proliferation. differentiation and maturation of 3T3-L1 preadipocytes were investigate after treatment for 24 hours by measuring MTT. Oil Red 0 and latate dehydrogenase activity.. Results: The Rossa rugosae Radix extract inhibited significantly the proliferation of 3T3-L1 preadipocytes and tended to increase latate dehydrogenase activity in the media of differentiated 3T3-L1 preadipocytes & matured 3T3-L1 preadipocytes. the extract also inhibit the lipid accumulation of differentiated 3T3-L1 preadipocytes & matuered 3T3-L1 preadipocytes. Conclusions: These results demonstrated that the Rossa rugosae Radjx extract inhibited the proliferation. differentiation and maturation of 3T3-L1 preadipocytes. suggesting that Rossa rugosae Radix has anti-obesity effect: however further in vivo study is needed to demonstrate its pharmacological effects.