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- 저자 : 하태준 (검색결과 232 건)
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하태준 한국물리학회 2015 Current Applied Physics Vol.15 No.3
We investigate the origin of photo-induced electrical instability in hydrogenated amorphous silicon based thin-film transistors (a-Si:H TFTs). Photo instability alone was accompanied by a positive shift in the threshold voltage (VTH) caused by photo irradiation, and even larger positive or negative shift further exacerbated the instability caused by photo-induced electrical bias stress. Such phenomena can occur as a result of extended charge trapping and/or the creation of defect-states at the semiconductor/ dielectric interface or in the gate dielectric. The mechanism for such is difficult to describe through chemical interactions of electron-donating and -withdrawing molecules that exhibit a shift in VTH in only one direction. We also prove that a transition from an amorphous to a protocrystalline phase improves the photo-induced electrical stability. Such results originate from a reduction in the density of the localized states in protocrystalline-Si:H films relative to that of a-Si:H. We believe that this study provides significant information on the device physics of optoelectronics, which commonly exhibit photo-induced instability and charge transport, as a result of prolonged exposure to photo irradiation.
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하태준 인구보건복지협회 2004 가정의벗 Vol.37 No.10
우리나라의 노년층에 대한 이해에 있어 가장 어려운 점은 성에 대한 인식의 부족에서 오는 경우가 많다. 실제 상당수의 노인이 노화로 인해 신체적으로 퇴화되더라도 성기능을 보전하고 싶어 하는 욕구나 이성교제에 대한 관심도 많은 편이다. 이제 노인의 성에 대한 인식을 새롭게 하고 건강하고 활기찬 생활이 되도록 노력하는 것이 필요하다.
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하태준,Alvin Lee 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.4
We report on the restoration of the electronic characteristics of waferscale chemical vapor deposition (CVD) monolayer graphene field-effect transistors (GFETs) by reducing the impurity concentration. An optimized electropolishing process on copper foils combined with carbon-fluorine encapsulation using a suitable amorphous fluoropolymer enables reducing the surface roughness of graphene and screening out interfacial impurity scattering, which leads to an improvement in all key device metrics. The conductivity at the Dirac point is substantially reduced, resulting in an increase in the on-off current ratio. In addition, the field-effect mobility increased from 1817 to 3918 cm2/V-s, the impurity concentration decreased from 1.1 × 1012 to 2.1 × 1011 cm−2 and the electron and hole transport became more symmetric. Significantly, favorable shifts toward zero voltage were observed in the Dirac point. We postulate that the smoother surface due to electropolishing and a pool of strong dipole-dipole moments in the flouropolymer coating provide a charge buffer that relaxes the fluctuation in the electron-hole puddles. We also investigate the long-term stability in GFETs encapsulated with fluoropolymer, which exhibit a high hydrophobicity that suppresses the chemical interaction with water molecules.
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신호교차로 교통사고 예측모형의 개발 및 적용 (광주광역시 4-지 신호교차로를 중심으로)
하태준,강정규,박제진 대한교통학회 2001 대한교통학회지 Vol.19 No.6
신호교차로 교통사고는 도시가 발달하고 산업이 고도화됨에 따라 교통혼잡 문제와 함께 심각한 사회문제로 대두되고 있다. 특히 이와 같은 교통사고는 대부분 인적 요인, 차량적 요인, 환경적 요인 등이 상호 복합적으로 작용하여 발생한다. 이전 교통사고와 교통량과의 관계는 운전자 과실과 함께 교통사고 발생에 주요요인으로 작용하고 있다. 본 연구에서는 교통사고 예측모형을 개발하기 위해 1996년부터 1998년까지 3년 동안에 실제 광주광역시 4-지 신호교차로 73개소에서 발생한 교통사고자료를 기초로 하였다. 또한 4-지 신호교차로 교통사고 분석에 단순통계분석과 교차분석 및 다중회귀분석을 사용하였다. 특히 다중회귀분석에는 교차로 사고분석을 위해 사고유형을 종속변수로, 방향별 접근 교통량을 독립변수로 각각 적용하여 교통사고 예측모형을 도출하였다. 그리고 본 연구에서 도출된 예측모형을 이용하여 전라남도 4-지 신호교차로에 대한 교통사고 잦은 지점으로 선정된 30개소를 선택, 사고유형을 분석한 후 교통사고 예측모형에 적용하여 사고모형을 검증하였다. 결론적으로 본 연구에서는 사고유형과 방향별 접근 교통량과의 관계를 이용하여 광주광역시 4-지 신호교차로 교통사고 예측모형을 개발하였고, 향후 연구과제로 타 지역 신호교차로 교통사고 예측모형 연구와 교차로 교통사고에 대한 안전대책 및 안전한 교차로 설계에 대한 지속적인 연구가 수행되어 져야 할 것이다. As a city and industries are developed rapidly, a traffic accident and congestion take places on the road link become serious and it can be a large problem of the society in the future. Especially, most of the traffic accidents on the signalized intersection are caused by the human factor, vehicle and environmental factor mutually. The relation of the traffic accident and volume is acting on the outbreak of the traffic accident and the mistake of driver altogether as a major cause. The purpose of this paper is to develop a model for the forecasting of the traffic accident and to use research data gained to predict many traffic accidents. The data of this study were used with real one of the 73 areas of the four-legged signalized intersection in Kwang-ju city from 1996 to 1998 for three years to develop a model for the forecasting of the traffic accident. The statistical methods used in this paper are the principal component, regression and correlation analysis. We studied accident models to find out useful data from the statistics method and applied the data to the different area of the Choun-La province for the verification of the model. So, the result of this paper showed a reasonable model for the forecasting or the traffic accident and possibility of the model for simulating on real case. Finally, This study would be made of a study continually for the safe design and plan for the four-legged signalized intersection.
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하태준 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.4
SWCNTHighperformance of solution-processed, single-wall-carbon-nanotube (SWCNT)thin-film transistors (TFTs) is investigated through the use in the different gatedielectricsof silicon dioxide (SiO2), silicon nitride (SiNx), the bilayers of SiO2and SiNx, and hexagonal boron-nitride (h-BN) thin films. The differentinterfacial characteristics affect the electrical characteristics of the SWCNTTFTsincluding key device metrics. Significantly, the hysteresis window that isnormally observed in drop-casted SWCNT-TFTs was majorly suppressed by theemployment of a thin lower dielectric-constant material on a higher dielectricconstantmaterial. Sub-2V operating SWCNT-TFTs with solution-processed h-BN gate dielectrics with good above- and sub-threshold characteristics are alsoinvestigated on the basis of interfacial characteristics underlying the devicephysics. Such performance can be realized by the suppressed interfacial impurityscattering through the chemically clean interface combined with optimizedsolution-process below 100 °C.
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