http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
CMP 공정에서 슬러리와 웨이퍼 형상이 SiC 웨이퍼 표면품질에 미치는 영향
박종휘,양우성,정정영,이상일,박미선,이원재,김재육,이상돈,김지혜,Park, Jong-Hwi,Yang, Woo-Sung,Jung, Jung-Young,Lee, Sang-Il,Park, Mi-Seon,Lee, Won-Jae,Kim, Jae-Yuk,Lee, Sang-Don,Kim, Ji-Hye 한국세라믹학회 2011 한국세라믹학회지 Vol.48 No.4
The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.