기판온도가 GZO 투명전도막의 재료평가지수에 미치는 영향

신현호(Hyun-Ho Shin),정양희(Yang-Hee Joung),강성준(Seong-Jun Kang) 한국전자통신학회 2023 한국전자통신학회 논문지 Vol.18 No.5

본 연구에서는 펄스 레이저 증착법으로 기판 온도에 따른 GZO(Ga2O3 :5wt% , ZnO : 95 wt %) 박막을 유리 기판에 증착하여 전기적 및 광학적 특성을 조사하였다. XRD측정을 통해 기판 온도에 무관하게 모든 GZO 박막이 c 축으로 우선 성장함을 확인할 수 있었고, 300℃에서 증착한 GZO 박막이 반가폭 0.38° 로 가장 우수한 결정성을 나타내었다. 기판 온도가 150에서 300℃로 증가함에 따라 GZO 박막의 비저항은 감소하는 경향을 보인 반면에 가시광 영역에서의 평균 투과도는 크게 영향을 받지 않는 것으로 조사되었다. 300℃에서 증착한 GZO 박막의 재료 평가 지수가 2.05×104 Ω-1·cm-1 로 가장 우수한 값을 나타내었고, 이때 비저항과 가시광 영역에서의 평균 투과도는 각각 3.72 × 10-4 Ω·cm 과 87.71 % 이었다. 본 연구를 통해 GZO 박막이 매우 유망한 투명 전도막 재료라는 것을 알 수 있었다. We prepared GZO (Ga2O3 :5wt% , ZnO : 95 wt %) thin film on glass substrate according to the substrate temperature using the pulsed laser deposition method and investigated electrical and optical properties of the thin film. Through the XRD measurements, their were confirmed that all GZO thin films grew preferentially in c-axis and the GZO thin film deposited at 300℃ showed the best crystallinity with a FWHM of 0.38°. As the substrate temperature increased from 150 to 300℃, the resistivity of GZO thin film tend to decrease, while the average transmittance in the visible light region was not significantly affected. The figure of merit of the GZO thin film deposited at 300℃ was 2.05×104Ω-1·cm-1, which was the best value, the resistivity and the average transmittance in the visible light region were 3.72 × 10-4 Ω·cm and 87.71 %, respectively. In this study, it was found that GZO thin film is very promising material for transparent conducting thin film.

RF magnetron sputtering으로 생성한 Ga,Ge와 Ga이 도핑된 ZnO 박막의 특성

정일현,김유진,박정윤,이루다,Jung, Il-Hyun,Kim, Yu-Jin,Park, Jung-Yoon,Lee, Ru-Da 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.3

The ZnO thin films doped with Ga(GZO) and both Ga and Ge(GZO:Ge) were deposited on glass substrate by using RF sputtering system respectively. Structural, morphological and optical properties of the films deposited in the same condition were investigated. Structural properties of the films were investigated by Field Emission Scanning Electron Microscopy, FE-SEM images and X-ray diffraction, XRD analysis. These studies showed shape of films' surface and direction of film growth respectively. It's showed that all films were deposited by vertical orientation strongly. It can be confirmed that all dopants of targets were included in deposited films by results of EDX analysis. UV-Vis spectrometer results showed that all samples had highly transparent characteristics in visible region and have similar 3.28~3.31 eV band gap. It was found that existence of all dopants by EDX analysis. Morphology and roughness of surface of each film were clearly shown by Atomic Force Microscopy, AFM images. It was found in this research that film doped with Ge more dense and stable with hardly any difference in gap energy compared to ZnO films.

Characteristics of Al-doped, Ga-doped and In-doped zinc-oxide films as transparent conducting electrodes in organic light-emitting diodes

Se Hun Park,송풍근,Ji Bong Park 한국물리학회 2010 Current Applied Physics Vol.10 No.3

The AZO, GZO and ZIO films were deposited on glass substrates by DC magnetron sputtering at substrate temperatures ranging from RT to 300 ℃ using impurity-doped ZnO targets containing 2.0 wt.% Al2O3,5.56 wt.% Ga2O3 and 9.54 wt.% In2O3, respectively. The lowest resistivity of 6.41 × 10–4 Ω cm was obtained for the GZO films deposited at 300 ℃. The AZO, GZO and ZIO films were used as an anode contact to fabricate organic emitting diodes. The turn-on voltage at current density of 0.01 mA/㎠ is 6.42,9.33 and 12.19 V for the devices with AZO, ZIO and GZO anodes, respectively. These results can be explained by carrier density and resistivity distribution of AZO, ZIO and GZO films.

Characteristics of Al-doped, Ga-doped and In-doped zinc-oxide films as transparent conducting electrodes in organic light-emitting diodes

Park, S.H.,Park, J.B.,Song, P.K. Elsevier 2010 CURRENT APPLIED PHYSICS Vol.10 No.3

The AZO, GZO and ZIO films were deposited on glass substrates by DC magnetron sputtering at substrate temperatures ranging from RT to 300<SUP>o</SUP>C using impurity-doped ZnO targets containing 2.0 wt.% Al<SUB>2</SUB>O<SUB>3</SUB>, 5.56 wt.% Ga<SUB>2</SUB>O<SUB>3</SUB> and 9.54 wt.% In<SUB>2</SUB>O<SUB>3</SUB>, respectively. The lowest resistivity of 6.41x10<SUP>-4</SUP> Ω cm was obtained for the GZO films deposited at 300<SUP>o</SUP>C. The AZO, GZO and ZIO films were used as an anode contact to fabricate organic emitting diodes. The turn-on voltage at current density of 0.01mA/cm<SUP>2</SUP> is 6.42, 9.33 and 12.19V for the devices with AZO, ZIO and GZO anodes, respectively. These results can be explained by carrier density and resistivity distribution of AZO, ZIO and GZO films.

Effect of the Cu Bottom Layer on the Properties of Ga Doped ZnO Thin Films

김대일 한국전기전자재료학회 2012 Transactions on Electrical and Electronic Material Vol.13 No.4

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 Ω/□, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 Ω/□ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

Effect of the Cu Bottom Layer on the Properties of Ga Doped ZnO Thin Films

Kim, Dae-Il The Korean Institute of Electrical and Electronic 2012 Transactions on Electrical and Electronic Material Vol.13 No.4

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

기판 바이어스 전압을 이용한 태양전지용 GZO 박막의 전기적, 광학적 특성

권순일,이석진,박승범,정태환,임동건,박재환,최원석,박문기,양계준,Kwon, Soon-Il,Lee, Seok-Jin,Park, Seung-Bum,Jung, Tae-Hwan,Lim, Dong-Gun,Park, Jea-Hwan,Choi, Won-Seok,Park, Moon-Gi,Yang, Kea-Joon 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.5

In this paper we report upon an investigation into the effect of DC bias voltage on the electrical and optical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_{2}O_{3}$. we investigated sample properties of bias voltage change in 0 to -60 V. We were able to achieve as low as $5.89{\times}10^{-4}{\Omega}cm$ and transmittance over 88 %. without substrate heating.

Ga doping 농도에 따른 ZnGaO 산화물의 투명특성 연구

황창수 ( Chang Su Hwang ) 공군사관학교 2012 空士論文集 Vol.63 No.2

본 연구에서는 진공 반응기 속에 두 개의 RF 스퍼터 타깃을 동시에 스퍼터링하는 방식으로 ZnO기반에 Ga이 첨가된 ZnxGa1-xO 박막을 진공 증착하여 제작하였다. ZnO 타깃에 대한 RF 스퍼터링 출력은 200와트로 고정하고, Ga2O3 타깃에 대한 RF 스퍼터링 출력을 30와트에서 100와트까지 변화하면서 박막을 제작하였다. 제작된 박막은 모두 34.4도 부근의 (002) 우선방위를 갖는 ZnO 기반의 결정성을 보였으며, EDAX 실험결과로부터 추정된 결과 Ga의 원자구성비가 7% 이상 경우 결정성이 급격히 소멸되는 결과를 보였다. 또한 광학적으로 에너지 밴드갭이 3.3 eV에서 3.5 eV 정도로 증가하여 가시광선에 대한 투과도는 88% 수준이었으나, 비저항은 0.05 Ω-cm 수준으로 급격히 증가하는 산화물 반도체로서 전기적 특성이 떨어지는 경향을 보였다. We have studied the transparent properties of Ga doped ZnO compound oxide semiconductor by fabricating ZGO thin films using co-sputtering system. The power for sputtering ZnO target was fixed at 200 watt while those for Ga2O3 target chaeged from 30 watt to 100 watt. The structure of ZGO films showed (002) prefer - orientated crystalline based on ZnO bonds. The ionic bonding structure of ZnGaO with the s orbital superposed among the neighbor atoms develops the origin of high mobility and high energy band gap around 3.4 eV. As the gallium contents increase over 7%, the resistivity rapidly reduced about 0.05 ohm-cm. However, the films were transparent with 88% of visible light passing through the films. This report focused on the correlation effect about the gallium impurity concentration causing electrical characteristics changing from a transparent insulator to a transparent metallic thin films.

High performance GZO/Ag NW electrodes for Transparent Flexible Heaters

Yong-Joon Kim,Hae-Jun Seok,Han-Ki Kim 한국진공학회 2018 한국진공학회 학술발표회초록집 Vol.2018 No.2

투명전극 응용을 위한 ZnO박막과 Ga 도핑 된 ZnO박막의 성장 후 열처리에 따른 특성분석

장재호,배효준,이지수,정광현,최현광,전민현,Jang, Jae-Ho,Bae, Hyo-Jun,Lee, Ji-Su,Jung, Kwang-Hyun,Choi, Hyon-Kwang,Jeon, Min-Hyon 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.7

Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer $(250{\sim}1200nm)$ and hall measurement. The post-growth thermal treatment of these films is carried out in N2 ambient at $500^{\circ}C$ for 30 min and an hour. ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films for solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the high transmittance of GZO films is improved by annealing process.