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알콕사이드로부터 Sialon-SiC계 미분말의 합성과 분말특성
이홍림,전명철,이형복 연세대학교 산업기술연구소 1988 논문집 Vol.20 No.2
Fine Si-Al-OH coprecipitate powder was prepared from Si- and Al-alkoxides by a hydrolysis method. Sialon-SiC composite powder was then fabricated from the Si-Al-OH coprecipitates by carbothermal reduction, nitridation and carbiding reaction method in nitrogen-hydrogen atmospheres. The average size of alpha silicon nitride was about 1㎛ and that of beta sialon was about 0.2-0.3㎛. However, the average size of Sialon-SiC composite powder was about 0.13㎛. Sialon/SiC(45/55) composite powder was hot-pressed at 1750℃ for 60 min in a nitrogen atmosphere. Bending strength, fracture toughness and microhardness were 494.6 MPa, 3.8 MN/m?? and 13.9 GPa. respectively.
Effect of Polarity on a SiC Crystal Grown on a SiC Dual-seed Crystal by Using the PVT Method
박종휘,이원재,양우성,정정영,이상일,박미선,신병철,여임규,은태희,Seung-Seok Lee,Myong-Chuel Chun 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.21
SiC crystal ingots were grown on 4H-SiC dual-seed crystals by using a physical vapor transport (PVT) technique, and SiC crystal wafers and cross sections sliced from the SiC ingot were systematically investigated to find the polarity dependence of the crystal polytype. The growth rate of the SiC crystal grown in this study was about 0.15 mm/hr. N-type 2-inch SiC crystals exhibiting 4H- and 6H-SiC polytypes were successfully fabricated on the C-face and the Si-face, respectively. As the growth of the SiC crystal ingot proceeded, the SiC crystal region grown on the C-face seed crystal was enlarged compared to the SiC crystal region grown on the Si-face seed crystal. The incorporation of nitrogen donors and the growth rate in the SiC crystals grown on the C-face seed crystal were be higher than those in SiC crystals grown on a Si-face crystal.
여임규,이재윤,전명철,Yeo, Im Gyu,Lee, Jae Yoon,Chun, Myong Chuel 한국결정성장학회 2022 한국결정성장학회지 Vol.32 No.5
This study is to verify the feasibility of SiC single crystal growth using recycled SiC powder. The fundamental physical properties such as particle size, shape, composition and impurities of the recycled powder were analyzed, and the sublimation behavior occurring inside the reactor were predicted using the basic data. As a result of comprehensive judgment, the physical properties of the recycled powder were suitable for single crystal growth, and single crystal growth experiments were conducted using this. 100 mm 4H-SiC single crystal ingot with a height of 25 mm was grown without polytype inclusion. In the case of micro-pipe density was 0.02 ea/cm<sup>2</sup> and resistivity characteristics was 0.015~0.020 ohm·cm<sup>2</sup>, commercial level quality was obtained, but additional analysis related to dislocation density and stacking faults is required for device application.
SiC Single Crystal Growth on Dual Seed with Different Surface Properties
Lee, Sang Il,Jung, Jung Young,Park, Mi Seon,Lee, Hee Tae,Lee, Doe Hyung,Lee, Won Jae,Hong, Soon Ku,Yeo, Im Gyu,Kim, Heung Rak,Chun, Myong Chuel Trans Tech Publications, Ltd. 2013 Materials science forum Vol.740 No.-
<P>SiC crystal ingots were grown on 6H-SiC dual-seed crystal with different surface properties by a PVT (Physical Vapor Transport) technique. And then SiC crystal wafers sliced from the SiC ingots were systematically investigated in order to find out the dependence of surface properties for seed on the polytype formation. While n-type SiC crystals exhibiting the 4H polytype were grown on seed crystal having high root-mean-square (rms) value, 6H-SiC crystals were grown on seed having lower rms value. However, 6H polytype was maintained on on-axis and off-axis seeds during the entire growth period. The crystal quality of 6H-SiC single crystals grown on on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on off-axis seed.</P>
The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT
Jung, Jung Young,Lee, Sang Il,Park, Mi Seon,Lee, Doe Hyung,Lee, Hee Tae,Lee, Won Jae,Hong, Soon Ku,Chun, Myong Chuel Trans Tech Publications, Ltd. 2013 Materials science forum Vol.740 No.-
<P>The present research was focused to investigate the effect of internal crucible design that influenced the 4H-SiC crystal growth onto a 6H-SiC seed by PVT method. The crucible design was modified to produce a uniform radial temperature gradient in the growth cell. The seed attachment was also modified with a use of polycrystalline SiC plate. The crystal quality of 4H-SiC single crystals grown in modified crucible and grown with modified seed attachment was revealed to be better than that of crystal grown in conventional crucible. The full width at half maximum (FWHM) values of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 285 arcsec, 134 arcsec and 128 arcsec, respectively. The micropipe density (MPD) of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 101ea/cm^2, 81ea/cm^2 and 42ea/cm^2, respectively.</P>
Effect of Polarity on a SiC Crystal Grown on a SiC Dual-seed Crystal by Using the PVT Method
Park, Jong-Hwi,Yang, Woo-Sung,Jung, Jung-Young,Lee, Sang-Il,Park, Mi-Seon,Shin, Byoung-Chul,Lee, Won-Jae,Yeo, Im-Gyu,Eun, Tai-Hee,Lee, Seung-Suk,Chun, Myong-Chuel Korean Physical Society 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.2
Effect of TaC-Coated Crucible on SiC Single Crystal Growth
Lee, Doe Hyung,Lee, Hee Tae,Bae, Byung Joong,Lee, Hee Jun,Lee, Sang II,Park, Mi Seon,Lee, Won Jae,Yeo, Im Gyu,Eun, Tai Hee,Chun, Myong Chuel Trans Tech Publications, Ltd. 2014 Materials science forum Vol.778 No.-
<P>The present research was focused to extensively investigate the effect of TaC-coated crucible on the SiC crystal growth and then compare the difference of various properties between SiC crystals grown in conventional graphite crucible and TaC-coated crucible. The bulk growth was conducted around 2200°C of the growth temperature and 40 mbar of an argon atmosphere for the growth pressure. The better crystalline quality was obtained from the crystal grown in TaC-coated crucible. The SiC crystal grown in the TaC-coated crucible exhibited superior characteristics than SiC crystal grown in the conventional crucible in terms of the crystal quality and defect density. Furthermore, nitrogen incorporation in SiC crystal grown in the TaC-coated crucible was definitely decreased.</P>
The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method
Yeo, Im Gyu,Lee, Tae Woo,Park, Jong Hwi,Yang, Woo Sung,Ryu, Heui Bum,Park, Mi Seon,Kim, Il Soo,Shin, Byoung Chul,Lee, Won Jae,Eun, Tai Hee,Lee, Seung Seok,Chun, Myong Chuel Trans Tech Publications, Ltd. 2011 Materials science forum Vol.679 No.-
<P>Extensive study of various process parameters to influence on the growth of 4H-SiC crystal has been carried out using the transformation of the 6H-SiC seed by a PVT method. The axial temperature gradients were increased throughout increasing the crucible length along growth direction in order to enhance the growth rate and transformed crystal yield. The N2/Ar gas ratio used during the crystal growth related with carrier concentration/mobility of grown crystal. In the initial stage of growth, foreign polytypes such as 6H/15R were observed on 6H-SiC seed crystal but 4H crystals were entirely grown after the process optimization. While the typical absorption spectrum of SiC seed crystal indicated that the SiC polytype was the 6H-SiC with fundamental absorption energy of about 3.02eV, absorption spectrum of grown SiC crystal exhibited 4H-SiC with fundamental absorption energy of about 3.26eV. The entirely transformed SiC region exhibited lower micropipe density than 6H/4H transition region.</P>
Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method
Yeo, Im Gyu,Lee, Tae Woo,Park, Jong Hwi,Yang, Woo Sung,Ryu, Heui Bum,Park, Mi Seon,Kim, Il Soo,Shin, Byoung Chul,Lee, Won Jae,Eun, Tai Hee,Lee, Seung Seok,Chun, Myong Chuel Trans Tech Publications, Ltd. 2011 Materials science forum Vol.679 No.-
<P>The single crystal ingots by using a sublimation technique were grown on 6H-SiC dual-seed crystals with opposite face polarities and then SiC crystal wafers sliced from the SiC ingot were systematically investigated to find out the polarity dependence of the crystal quality. The growth rate of the SiC crystal grown in this study was about 0.2mm/hr. N-type 2’’ SiC crystals exhibiting the 4H- and 6H-SiC polytype were successfully fabricated on C-face and Si-face, respectively. The incorporation of nitrogen donors in the SiC crystals grown on the C-face seed crystal was exhibited to be higher than in SiC crystals grown on a Si-face crystal. When the SiC crystal ingot proceeded to grow, the SiC crystal region grown on the C-face seed crystal was enlarged compared to the SiC crystal region on the Si-face seed crystal.</P>