CALPUFF 대기 확산 모델을 이용한 유해물질 농도 예측

홍연우,김재준,박성일 대한기계학회 2024 대한기계학회 춘추학술대회 Vol.2024 No.5

Mn을 첨가한 ZnO-TeO₂ 세라믹스의 소결과 전기적 특성

홍연우,신효순,여동훈,김종희,김진호,Hong, Youn-Woo,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jong-Hee,Kim, Jin-Ho 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.1

We investigated the sintering and electric properties of ZnO-1.0 at% $TeO_2$ (ZT1) and 1.0 at% Mn-doped ZT1(ZT1M1) system. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ or $Zn_2Te_3O_8$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. In ZT1M1 system, also, the densification of ZnO was retarded up to $1000^{\circ}C$ and then reached > 90% of theoretical density above $1100^{\circ}C$. It was found that a good varistor characteristics(nonlinear coefficient $a{\sim}60$) were developed in ZT1M1 system sintered at $1100^{\circ}C$ due to Mn which known as improving the nonlinearity of ZnO varistors. The results of C-V characteristics such as barrier height (${\Phi}_b$), donor density ($N_D$), depletion layer (W), and interface state density ($N_t$) in ZT1M1 ceramics were $1.8{\times}10^{17}cm^{-3}$, 1.6 V, 93 nm, and $1.7{\times}10^{12}cm^{-2}$, respectively. Also we measured the resistance and capacitance of grain boundaries with temperature using impedance and electric modulus spectroscopy. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots.

ZnO-Bi₂O₃-Sb₂O₃ 세라믹스의 전기적 특성

홍연우,신효순,어동훈,김종희,김진호,Hong, Youn-Woo,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jong-Hee,Kim, Jin-Ho 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.8

In this study, it has been investigated on the changing behavior of electrical properties in $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0 and 0.5) ceramics. The samples were prepared by conventional ceramic process, and then characterized by I-V, C-V curve plots, impedance and modulus spectroscopy (IS & MS) measurement. The electrical properties of ZBS systems were strongly dependent on Sb/Bi. In ZBS systems, the varistor characteristics were deteriorated noticeably with increasing Sb/Bi and the donor density and interface state density were increased with increasing Sb/Bi. On the other hand, we observed that the grain boundary reacted actively with the ambient oxygen according to Sb/Bi ratio. Especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature. Besides, the increased pyrochlore and $\beta$-spinel phase with Sb/Bi ratio caused the distributional inhomogeneity in the grain boundary barrier height and the temperature instability. To the contrary, the grain boundary layer was relatively homogeneous and more stable to temperature change and kept the system highly nonlinear at high Bi-rich phase contents.

Cr을 첨가한 ZnO-Sb₂O₃ 세라믹스의 바리스터 응용

홍연우,신효순,여동훈,김진호,Hong, Youn-Woo,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jin-Ho 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.11

In this study, we have investigated the effects of Cr dopant on the sintering and electrical properties of ZnO-$Sb_2O_3$ (ZS) ceramics for varistor application. Spinel phases including $\alpha-$ and $\beta$-type was formed at ZS system and $\alpha$-spinel was stabilized by Cr doping in ZS system. Densification of ZS and ZSCr system was retarded to $1000^{\circ}C$ by the formation of spinel at $800^{\circ}C$. The morphology and its distribution of spinel phases in ZS system was homogeneous but disturbed by Cr doping. In ZSCr the densification of ZnO compared with ZS system was more retarded by low concentration of Zn interstitial defects induced by Cr doping in addition to the effect of spinel phase formation. The defects in each system were identified as attractive coulombic center (ZS: 0.13 eV, ZSCr: 0.12 eV) and singly charged oxygen vacancy $V_0^{\cdot}$ (ZSCr: 0.33 eV). In all ZS and ZSCr system have week varistor behavior by the formation of double Schottky barrier at grain boundary but its stability of barrier was very sensitive to sintering temperature.

Cr을 첨가한 ZnO의 결함과 입계 특성

홍연우,신효순,여동훈,김종희,김진호,Hong, Youn-Woo,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jong-Hee,Kim, Jin-Ho 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.11

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

Ni를 첨가한 ZnO-Bi₂O₃-Sb₂O₃계의 소결과 전기적 특성

홍연우,신효순,여동훈,김종희,김진호,Hong, Youn-Woo,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jong-Hee,Kim, Jin-Ho 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.11

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

ZnO-Bi₂O₃-Mn₃O₄-Co₃O₄ 바리스터의 결함과 전기적 특성

홍연우,이영진,김세기,김진호,Hong, Youn-Woo,Lee, Young-Jin,Kim, Sei-Ki,Kim, Jin-Ho 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.12

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

Sb/Bi비가 ZnO-Bi₂O₃-Sb₂O₃-Mn₃O₄-Co₃O₄ 바리스터의 소결과 입계 특성에 미치는 영향

홍연우,이영진,김세기,김진호,Hong, Youn-Woo,Lee, Young-Jin,Kim, Sei-Ki,Kim, Jin-Ho 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.11

In this study we aims to examine the co-doping effects of 1/3 mol% $Mn_3O_4+Co_3O_4$ (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (${\alpha}$- or ${\beta}$-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in $Sb/Bi{\geq}1.0$ In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, ${\alpha}$=30~49), and seemed to form $Zn_i^{..}$(0.17 eV) and $V_o^{\bullet}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to $ZnO/Bi_2O_3(Mn,Co)/ZnO$ (0.47 eV) and the other ZnO/ZnO (0.80~0.89 eV) homojunctions.

캡스트럼 포락선을 이용한 해금 소리의 포만트 합성

홍연우,조상진,김종면,정의필,Hong, Yeon-Woo,Cho, Sang-Jin,Kim, Jong-Myon,Chong, Ui-Pil 한국음향학회 2009 韓國音響學會誌 Vol.28 No.6

본 논문에서는 전통 현악기 해금의 스펙트럼 모델링을 위해 캡스트럼 포락선을 이용한 포만트 합성법을 제안한다. 스펙트럼 모델링은 입력 신호를 정현파 성분과 노이즈 성분의 합으로 해석하여 음을 합성하는 기술로 주기성이 있는 현악기나 관악기의 음 합성에 효과적이다. 캡스트럼 포락선의 포만트는 정현파 성분 합성을 위한 파라미터로 활용하였다. 정현파 성분을 합성하기 위해 기존의 가산합성 방식과는 달리 IIT (Impulse Invariant Transform)로 공명기를 설계하였으며 배음간 크기 보완을 위해 대역 통과 필터를 추가하였다. 원음과 합성된 정현파 성분의 차로 구해진 노이즈 성분에 포함된 일부 유효배음을 제거하면 완전한 노이즈 성분을 구할 수 있으며 선형 보간법 (linear interpolation)에 기초하여 그 주파수 특성을 파라미터화 하였다. 최종적으로 합성된 노이즈 성분과 정현파 성분을 더하여 해금 단위음을 합성하였고 합성음은 원음과 매우 유사하였다. This paper proposes a formant synthesis method of Haegeum sounds using cepstral envelope for spectral modeling. Spectral modeling synthesis (SMS) is a technique that models time-varying spectra as a combination of sinusoids (the "deterministic" part), and a time-varying filtered noise component (the "stochastic" part). SMS is appropriate for synthesizing sounds of string and wind instruments whose harmonics are evenly distributed over whole frequency band. Formants extracted from cepstral envelope are parameterized for synthesis of sinusoids. A resonator by Impulse Invariant Transform (IIT) is applied to synthesize sinusoids and the results are bandpass filtered to adjust magnitude. The noise is calculated by first generating the sinusoids with formant synthesis, subtracting them from the original sound, and then removing some harmonics remained. Linear interpolation is used to model noise. The synthesized sounds are made by summing sinusoids, which are shown to be similar to the original Haegeum sounds.

ZnO-Bi₂O₃-Co₃O₄ 바리스터의 전기적 특성

홍연우,신효순,여동훈,김진호,Hong, Youn-Woo,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jin-Ho 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.11

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.