원료물질에 따른 실리콘 질화막의 원자층 증착 특성 비교

이원준,이주현,이연승,나사균,박종욱,Lee Won-Jun,Lee Joo-Hyeon,Lee Yeon-Seong,Rha Sa-Kyun,Park Chong-Ook 한국재료학회 2004 한국재료학회지 Vol.14 No.2

Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.

HVPE를 이용하여 r-plane 사파이어 위에 multi-step으로 성장시킨 a-plane GaN 에피층의 특성 연구

이원준,박미선,장연숙,이원재,하주형,최영준,이혜용,김홍승,Lee, Won-Jun,Park, Mi-Seon,Jang, Yeon-Suk,Lee, Won-Jae,Ha, Ju-Hyung,Choi, Young-Jun,Lee, Hae-Yong,Kim, Hong-Seung 한국결정성장학회 2016 한국결정성장학회지 Vol.26 No.3

본 연구에서는 HVPE(Hydride Vapor Phase Epitaxy)를 이용하여 각각 다른 V/III ratio를 가지는 multi-step의 성장 시간 변화에 따라 r-plane 사파이어 위에 성장되는 a-plane GaN 에피층의 결정성에 대하여 연구하였다. 또한 이번 연구의 결과를 선행 연구에서 single-step으로 r-plane 사파이어 위에 성장시킨 a-GaN 에피층의 결과와 비교하였다. Multi-step으로 r-plane 사파이어 위에 a-plane GaN 에피층을 성장시켰을 때, source HCl의 유량과 성장 시간이 증가함에 따라 a-plane GaN 에피층에 대한 rocking curve의 FWHM(Full Width at Half Maximum) 값이 감소하였다. 높은 source HCl의 유량을 갖는 first step과 second step의 성장 시간과 source HCl의 유량이 증가할수록 a-plane GaN 에피층 내부의 void가 감소하였다. 결과적으로 first step과 second step의 성장 시간이 가장 긴 조건에서 성장된 a-plane GaN 에피층이 가장 낮은 FWHM 값인 584 arcsec을 가지며, azimuth angle의 의존도가 가장 적은 것으로 확인되었다. In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.

SiH₂Cl₂ 와 O₃을 이용한 원자층 증착법에 의해 제조된 실리콘 산화막의 특성

이원준,이주현,한창희,김운중,이연승,나사균,Lee Won-Jun,Lee Joo-Hyeon,Han Chang-Hee,Kim Un-Jung,Lee Youn-Seung,Rha Sa-Kyun 한국재료학회 2004 한국재료학회지 Vol.14 No.2

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

HVPE법을 이용하여 PSS와 AlN Buffered PSS 위에 성장시킨 GaN 박막의 결정 특성

이원준,박미선,이원재,김일수,최영준,이혜용,Lee, Won Jun,Park, Mi Seon,Lee, Won Jae,Kim, Il Su,Choi, Young Jun,Lee, Hae Yong 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.6

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

화학적 공정을 이용한 Y₂Ti₂O₇ 분말과 후막 제조 및 특성

이원준,최연빈,배동식,Lee, Won-Joon,Choi, Yeon-Bin,Bae, Dong-Sik 한국재료학회 2017 한국재료학회지 Vol.27 No.5

$Y_2Ti_2O_7$ nanoparticles (0.3 mol%) have been successfully synthesized by the co-precipitation process. The samples, adjusted to pH7 with ammonia solution as catalyst and calcined at $700{\sim}900^{\circ}C$, exhibit very fine particles with close to spherical shape and average size of 10-30 nm. It was possible to control the size of the synthesized $Y_2Ti_2O_7$ particles by manipulating the conditions. The $Y_2Ti_2O_7$ nanoparticles were coated on a glass substrate by a dipping coating process with inorganic binder. The $Y_2Ti_2O_7$ solution coated on the glass substrate had excellent adhesion of 5B; pencil hardness test results indicated an excellent hardness of 6H. The thickness of the thick film was about $30{\mu}m$. Decomposition of MB on the $Y_2Ti_2O_7$ thin film shows that the photocatalytic properties were excellent.

Design Issues and QoS Negotiation Protocol Model for Networked Multimedia Systems

이원준,Lee, Won-Jun Korea Information Processing Society 2002 정보처리학회논문지 C : 정보통신,정보보안 Vol.9 No.5

This Paper describes our experiences with the design and implementation of a networked multimedia information management system in an object-oriented framework for distributed multimedia applications, and an integrated QoS-resource negotiation protocol which has been applied to a video server in our networked multimedia infrastructure. The salient features of our framework to support efficient multimedia streaming are explained. Next the paper explores the challenges faced in integrating the proposed QoS negotiation policy into the framework. 본 논문에서는 분산 멀티미디어 응용을 위한 객체 지향형 프레임워크 방식으로 설계된 네트워크 멀티미디어 관리 시스템 개발에 관한 설계 이슈 및 프로토타입 개발 경험을 기술하고, 특히 멀티미디어 관리 시스템의 일부로서 개발한 비디오 서버 상에 적용 가능한 통합형 QoS-자원 협상 프로토콜의 주요 특징에 관하여 설명한다. 구현된 멀티미디어 프레임 워크 상에서 효율적인 멀티미디어 스트리밍을 지원하기 위하여 새로 제안된 QoS 협상 정책을 실제 서버에 적용하는데 있어서 고려해야 할 중요 이슈에 대해서도 분석하였다.

잉크젯 프린팅용 pink-red 수계 무기잉크의 제조 및 특성평가

이원준,황해진,한규성,조우석,김진호,Lee, Won-Jun,Hwang, Hae-Jin,Han, Kyu-Sung,Cho, Woo-Suk,Kim, Jin-Ho 한국결정성장학회 2015 韓國結晶成長學會誌 Vol.25 No.1

세라믹 잉크젯 기술은 아트타일, 장식용 도자기 등에 이용되고 있으며, 원료의 효율이 높고 낮은 제작비용으로 다양한 이미지를 빠르고 정확하게 인쇄할 수 있다는 장점을 가지고 있다. 잉크젯 프린팅 타일에 나노세라믹안료를 적용하기 위해서는 안정적인 잉크분산성 확보가 필수적이다. 본 논문에서는 잉크젯 인쇄용 수계 pink-red 세라믹잉크의 특성을 보여주고 있다. $CaCr_{0.1}Sn_{0.8}SiO_5$ 안료는 고상법을 이용하여 합성하였고, 잉크 토출 시 잉크젯 헤드의 노즐 막힘을 방지하기 위해 어트리션밀을 이용하여 분쇄한 안료를 사용 하였다. 수계 세라믹잉크 제조 시 $CaCr_{0.1}Sn_{0.8}SiO_5$ 나노안료의 농도는 10 wt%로 고정하였고, sodium dodecyl sulfate(SDS)를 0.4 wt% 첨가 하였을 때 최적의 분산성을 가지는 것을 확인할 수 있었다. 또한 수계 세라믹 잉크의 원활한 토출을 위해 polyvinyl alcohol(PVA)을 0.18 wt% 첨가하여 점도 조절을 하였다. 제조된 pinkred 세라믹 잉크는 토출 시 $180{\mu}s$ 이후 구형의 단일액적을 형성 하는 것을 확인할 수 있었다. Ceramic ink-jet printing technology in art tiles, decorated tablewares and other porcelain products has many advantages of fast and precision printing of various images with high efficiency and low cost. For the application to ink-jet printing, ceramic ink requires a stable dispersibility with nano-sized pigments. In this paper, characteristics of pink-red aqueous ceramic ink for ink-jet printing was demonstrated. $CaCr_{0.1}Sn_{0.8}SiO_5$ pigment was synthesized using solid state reaction and deagglomerated using attrition milling. The aqueous ceramic ink contains 10 wt% of the obtained $CaCr_{0.1}Sn_{0.8}SiO_5$ nanopigment with 0.4 wt% of sodium dodecyl sulfate (SDS) as a dispersion agent. Viscosity of $CaCr_{0.1}Sn_{0.8}SiO_5$ aqueous ceramic ink was adjusted using 0.18 wt% of polyvinyl alcohol (PVA) for a suitable jetting from the nozzle. The prepared pink-red ceramic ink showed a good jetting property with formation of a single sphere-shaped droplet after $180{\mu}s$ without a tail and satellite droplet.

Caffeic acid, chlorogenic acid, EGCG가 유방암 세포 T-47D의 p16 유전자 DNA methylation에 미치는 영향

이원준,Lee, Won-Jun 한국생명과학회 2007 생명과학회지 Vol.17 No.4

본 연구에서 사용한 coffee에 다량 함유된 caffeic acid와 chlorogenic acid, 녹차에 함유된 EGCG 성분은 암세포의 증식을 억제하는데 중요한 기능을 담당하는 세포주기 조절인자인 p16 유전자의 DNA methylation 패턴을 유방암 T-47D 세포에서 유의하게 변화시켰다. MSP를 이용하여 p16 유전자의 promoter 지역에서의 methylation상태의 변화를 살펴본 결과 caffeic acid, chlorogenic acid, EGCG는 유전자의 hypermethylation을 감소시켰으며, 이로 인해 demethylation된 p16 유전자가 증가하는 경향을 보였다. 이러한 연구 결과는 coffee 폴리페놀인 caffeic acid, chlorogenic acid와 녹차 폴리페놀인 EGCG는 세포내의 DNA methylation을 억제하는 기능을 가지는데, 이는 coffee폴리페놀과 같이 COMT 효소에 의한 methylation 부산물인 SAH의 증가에 의한 DNMT의 억제이거나, EGCG와 같이 DNMT와 직접적으로 결합하여 methylation 반응을 억제하는 mechanism에 의한 것으로 사료된다. 따라서 앞으로 이미 개발된 항암제뿐만 아니라, 부작용과 독성이 적은 식이성분에 대한 연구가 좀 더 심도 있게 이루어 져야 할 것이며, 이러한 연구들은 암이 발생되고 난 후 치료 요법으로 사용됨은 물론, 암이 발생하기 전에 사전 예방법으로도 널리 적용하는데 있어 중요한 이론적 토대를 마련할 것으로 사료된다. In the present investigation, we studied the modulating effects of caffeic acid, chlorogenic acid, and (-)-epigallocatechin-3-gallate(EGCG) on the methylation status of promoter regions of cell cycle regulator, p16, in human breast cancer T-47D cells. We demonstrated that treatment of T-47D cells with caffeic acid, chlorogenic acid, or EGCG partially inhibited the methylation status of the promoter regions of p16 genes determined by methylation-specific PCR. In contrast, unmethylated p16 genes were increased with the treatment of T-47D cells with $20{\mu}M$ of caffeic acid or chlorogenic acid for 6 days. Treatment of T-47D cells with 5, 20 or $50{\mu}M$ of EGCG increased the unmethylation status of p16 gene up to 100%, and the methylation-specific bands of this gene were decreased up to 50% in a concentration-dependent manner. The finding of present study demonstrated that coffee polyphenols and EGCG have strong inhibitory effects of the cellular DNA methylation process through increased formation of S-adenosyl-homocysteine(SAH) during the catechol-O-methyltransferase (COMT)- mediated O-methylation of these dietary chemicals or an direct inhibition of the DNA methyltransferases. In conclusion, various dietary polyphenols could reverse the methylation status of p16 gene in human breast T-47D cells.

협대역 고반사 파장 필터 구현을 위한 폴리머 광도파로 에포다이즈드 격자

이원준,황광호,신진수,오민철,Lee, Won-Jun,Huang, Guanghao,Shin, Jin-Soo,Oh, Min-Cheol 한국광학회 2015 한국광학회지 Vol.26 No.4

파장 투과 대역폭이 좁으면서도 반사율이 높은 파장 필터를 구현하기 위해서 격자의 반사율이 진행 방향을 따라 서서히 변하는 구조의 에포다이즈드 격자 구조를 폴리머 광도파로와 함께 제작하였다. 격자로 인한 유효 굴절률 변화가 $5{\times}10^{-4}$인 경우에 대하여 에포다이즈드 격자의 길이에 따른 반사율 변화를 설계하였으며 길이가 15 mm 이상이 되는 경우에 반사율이 99%에 도달함을 확인하였다. 길이가 서로 다른 여러 개의 격자를 제작하여 반사율, 3-dB 대역폭, 20-dB 대역폭을 측정하였으며, 격자 길이가 18 mm인 소자에서 95%의 반사율을 얻을 수 있었고, 이때 3-dB 대역폭은 0.28 nm, 그리고 20-dB 대역폭은 0.70 nm의 특성을 가짐을 확인하였다. Wavelength filters are essential components for selecting a certain wavelength channel of a WDM optical communication system. To realize wavelength filters with narrow bandwidth and high reflectivity, an apodized grating structure with length of 15 mm and index modulation of $5{\times}10^{-4}$ was designed. The device exhibited a reflectivity of 95%, 3-dB bandwidth of 0.28 nm, and 20-dB bandwidth of 0.70 nm on an 18 mm grating length.

Johanson 방법을 응용한 연령추정

이원준,김병국,김재형,임회순,이금숙,최홍란,Lee, Won-Joon,Kim, Byung-Gook,Kim, Jae-Hyung,Lim, Hoi-Soon,Lee, Guem-Sug,Choi, Hong-Ran 대한안면통증구강내과학회 2005 Journal of Oral Medicine and Pain Vol.30 No.2

Age estimation is fundamental and important in personal identification with forensic medicine and dentistry. Recently, a lot of studies using various part of the body have been done for age estimation. Age estimation with teeth is the most significant method comparing ones with other part of the body. Gustafson method and Johanson method using postmortem teeth have been authorized in accuracy and systemization and used domestically and internationally. The verification of the accuracy in above methods had been tried many times but it is still rare in Korea. Fifty-nine teeth(incisors, canine, premolars and molars) which were extracted due to periodontal diseases or orthodontic problem were collected. Present study is to 1) compare the accuracy of estimated age in applying Gustafson method and Johanson method to the teeth in Korea, 2) compare and analyze the correlation with results using Gustafson method and Johanson method by age, gender, maxilla - mandible and anterior - premolar - molar. Teeth were embedded in resin and sliced and then examined each one using Gustafson method and Johanson method. The results are as follows: 1. Actual age was a significant difference in estimated age by Johanson method. Actual age was a significant correlation in estimated age by Gustafson method and modified Johanson method. Modified Johanson method was more significant than Gustafson method. 2. In estimated age by Gustafson method, Johanson method and modified Johanson method, there was no significance with actual age by location and gender. 3. In estimated age by Gustafson method, Johanson method and modified Johanson method, there was significance with actual age by age group. Finally, Gustafson method and Johanson method can be used in Korea. To make more accurate verification, however, it needs more specimen and postmortem teeth. Johanson equation proposed by himself has to be developed by further studies.