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20세기 전반기 에큐메니칼 운동에서의 서구교회와 비서구교회
민관홍 한국교회사학회 2013 韓國敎會史學會誌 Vol.34 No.-
Auf der Weltmissionskonferenz (The World Missionary Conference) in Edinburgh 1910 forderten die 17 nicht-westlichen Vertreter ein herzliches Zusammenwirken zwischen westlichen Kirchen und nicht-westlichen Kirchen. Auf der Vollversammlung des IMR in Jerusalem 1928 forderten die Delegierten aus nicht-westlichen Kirchen die Anerkennung ihrer kirchlichen Selbständigkeit. Nicht-westliche Kirchen wünschten eine nationale vereinigte Kirche im Zusammenhang mit ihrem erwachsenden Nationalgefühl. Auf der Vollversammlung des IMR in Tambaram 1938 waren die Delegierten aus nicht-westlichen Kirchen in der Mehrheit. Aber dazu wurde im Bericht, der John Merle Davies vorgelegt hatte, ernüchternde festgestellt, dass nichtwestlichen Kirchen in einer schlechten finanziellen Lage waren, und dass ihre Strukturen immer noch schwach waren. Auf der Vollversammlung des IMR in Whitby 1947 wurde die Partnerschaft zwischen westlichen Kirchen und nicht-westlichen Kirchen viel stärker verwirklichen. Die Weltkonferenz für Praktisches Christentum (The Universal Christian Conference on Life and Work) veränderte nicht ihren westlich geprägten Charakter auf der Vollversammlung in Stockholm 1925 sowie auf der Vollversammlung in Oxford 1937. Auch die Weltkonferenz für Glauben und Kirchenverfassung (The World Conference on Faith and Order) veränderte nicht ihren westlich geprägten Charakter auf der Vollversammlung in Lausanne 1927 sowie auf der Vollversammlung in Edinburgh 1937. Deshalb hatten die Weltkonferenz für Praktisches Christentums und die Weltkonferenz für Glauben und Kirchenverfassung keine guten Beziehungen zu nichtwestlichen Kirchen. Darüber hinaus dominierten westliche Kirchen den Gründungsprozess des Ökumenischen Rates der Kirchen (ÖRK). Auf der Vollversammlung in Amsterdam 1948 gab der ÖRK der Lage der nicht-westlichen Kirchen keine Beachtung. Bei den ökumenischen Bewegungen in der ersten Hälfte des 20. Jahrhunderts. will westliche Kirchen keine echte ökumenische Annäherung an nicht-westlichen Kirchen.
민관홍,유정재,정상현,찬다솜바스 시사바이,김광호 한국정보기술학회 2014 한국정보기술학회논문지 Vol. No.
In this study, fabrication and properties of MIS solar cell by using screen printing method which has advantage of mass production, low price, and simple processing compared with vacuum deposition method were analyzed. To fabricate MIS capacitor, Aluminum oxide(Al2O3) thin film(1nm) which has a good electrical and optical properties at visible ray region was deposited on p-Si(0.5-2Ω·cm) by RPALD(Remote Plasma Atomic Layer Deposition) and Ag, Al metal pastes used as front and back contact were printed using screen printing method then annealing by RTA(Rapid Thermal Annealing). Electrical properties of MIS capacitors were measured such as leakage current and C-V by pA meter(HP 4140B) and LCR meter(HP 4284A), respectively. Base on the result of MIS capacitor, MIS Solar cell using screen printing method was fabricated and electrical properties(I-V) was analyzed by solar simulator at STC(Standard Test Condition) 100mW/cm2, 25℃. In addition, spectral response properties of MIS solar cell was measured from 350nm to 1100nm wavelength by quantum efficiency measurement system. 본 연구는 전극을 형성하는데 있어서 진공증착법보다 공정이 간편하고 저가의 대량생산에 용이한 장점을 가진 스크린 인쇄법을 이용하여 MIS 태양전지를 제작하여 특성을 평가하였다. p-Si(0.5-2 Ω·cm) 기판 위에 기계적 특성이 뛰어나고 가시광선 영역에서 광학적 특성이 우수한 산화알루미늄(Al2O3, 1nm)박막을 RPALD (Remote Plasma Atomic Layer Deposition)을 이용하여 증착하고 전면 전극으로 Ag, 후면 전극 Al 페이스트를 스크린 인쇄법으로 인쇄한 뒤, RTA(Rapid Thermal Annealing, 급속열처리)장치로 열처리 하여 MIS 커패시터를 제작하였다. MIS 커패시터의 전기적 특성은 pA meter(HP 4140B)와 LCR meter(HP 4284A)를 이용하여 C-V특성과 누설전류 특성을 평가하였다. 커패시터의 전기적 특성 평가 후 스크린 인쇄법을 이용하여 MIS 태양전지를 제작하여 솔라시뮬레이터(Solar Simulator)로 STC(Standard Test Condition) 100mW/cm2, 25℃ 상태에서 태양전지의 전기적 특성을 평가하고, 양자효율 측정 시스템(Quantum Efficiency measurement system)을 이용하여 파장범위(350~1100nm)에 따른 스펙트럼 응답 특성을 평가하였다.
민관홍,최성진,정명상,강민구,박성은,송희은,이정인,김동환 한국물리학회 2019 Current Applied Physics Vol.19 No.2
Plasma-assisted atomic layer deposition (PA-ALD) is more suitable than thermal atomic layer deposition (ALD) for mass production because of its faster growth rate. However, controlling surface damage caused by plasma during the PA-ALD process is a key issue. In this study, the passivation characteristics of Al2O3 layers deposited by PA-ALD were investigated with various O2 plasma exposure times. The growth per cycle (GPC) during Al2O3 deposition was saturated at approximately 1.4 Å/cycle after an O2 plasma exposure time of 1.5 s, and a refractive index of Al2O3 in the range of 1.65–1.67 was obtained. As the O2 plasma exposure time increased in the Al2O3 deposition process, the passivation properties tended to deteriorate, and as the radio frequency (RF) power increased, the passivation uniformity and the thermal stability of the Al2O3 layer deteriorated. To study the Al2O3/Si interface characteristics, the capacitance-voltage (C-V) and the conductance-voltage (G-V) were measured using a mercury probe, and the fixed charge density (Qf) and the interface trap density (Dit) were then extracted. The Qf of the Al2O3 layer deposited on a Si wafer by PA-ALD was almost unaffected, but the Dit increased with O2 plasma exposure time. In conclusion, as the O2 plasma exposure time increased during Al2O3 layer deposition by PA-ALD, the Al2O3/Si interface characteristics deteriorated because of plasma surface damage.