단채널 MOSFET의 2차원 수치해석에 관한 연구

박장우,곽계달,박광민 순천향대학교 1993 논문집 Vol.16 No.3

In this paper, two dimensonal numercial simulations of short channel MOSFETs are performed. The drift-diffusion model as physical model and the control volume formulation method as discretization method are used. To verify the validity of this paper, the calculated I-V characteristics are compared with experimental data. To study short channel effect, MOSFET with gate length of 0.5㎛ is analyzed with two dimensional numerical simulation. The potential distributions, the electron concentration distribution and the hole concentration distributions in MOSFETs are shown with the various applied voltages. Also, to investigate the characteristics of MOSFET with the various gate lengths. MOSFETs with gate length of 0.5㎛,1.3 ㎛, 2.0 ㎛ are simulated, and the potential distributions are shown.

한자 병용의 어문정책적 의미 고찰

박광민 한국한자한문교육학회 2001 漢字 漢文敎育 Vol.7 No.-

For long times I, the author, wanted to find the materials of language and literal policy during the American military administrative era, but it would not go easy. Then in 1999 Mr. Son, WonIl, my acquaintance found and send me 『Report of the United States Educational Mission to Japans』. This working is written for analyzing our country's language policy right after Liberation, and its background, focusing on 『Report of the United States Educational Mission to Japan』, and for trying to find out alternative policy. Now over half a century have passed since the Liberation, but where we stand on the great wave of world history? Our language & literal policy have repeated twisted walking tending to the emotional surroundings that based on Hangul-only ism since the enactment of Hangul-only-law in October, 9, 1948. Language & literal policy does not, reveal visible result to our eyes immediately as industrial one. But the result of language policy make enormous influence enough to tremble the identity of a nation. Nevertheless I could not find any traces of policy authorities that took attention on this problem, at any successive governments. The two voices that proclaim Hanja-education and Hangul-only-education have too acutely confronted, so each have run parallel way with no yielding. The scholars and policy authorities that do not join any of the two sides have disregarded the two voices as obstinate egoistic quarrel of some scholars that have nothing to do with them. The proclamations of scholars whether in Hanja-education or Hangul-only-education also in fact flowed mainly as a matter of course that 'must educate Hanja' or 'must use Hangul-only', not by rational analyzing of the cause and proposal of logical alternatives. But the causeless and emotional matter of course will not be persuasive. There were exceptional excellent work such as $quot;Collection of Lectures on National Language and National Alphabets$quot; of Dr. Nam, GwangWoo and $quot;The Significant Misunderstanding about National Language$quot; of Mr. O, JiHo. But the works that mainly on analyzing and alternatives are very uneasy to find out. During last several years I, the author, writing works concerning language & literal police become to observe Korean language at linguistic side. The more I investigate Korean language, the more I perceive that Hangul and Hanja are undividable linguistic features. Of course since I am not a linguistics specialist I feel sorry for the specialized scholars. But the books of Mizura Sdomu, who not a scholar of linguistics, that studied linguistic features of Japanese language more deeply than any other and left distinct footsteps on that field, gave me many stimuli. The keen analyze of Mr. Park KyungBeom, a natural scientist graduated the department of computer science and statistics of Seoul National University, also be a great help to compare and analyzing the linguistic features of Korean language and English language. Recently many people says $quot;The crisis of human sciences$quot;, but few accurately point the cause of that. Boldly I think the cause is at the wrong Hangul-only language & literal policy. Although language & literal policy is a significant and great affair that holds the destiny of national people, it have been disregarded as out of consideration. Hangul-only policy of the character media such as newspapers and editions have made the thinking of readers dull, voluntarily result in shackle themselves in competition with television media. This rough work is not a pure academic one that comments the linguistic feature of Korean language. Only I will be satisfied if throughout this work, we can reflect the problems of our history of language and literal policy and can find out even a small motive for studying linguistics of Korean language.

Cyclosporine microemulsion제제 Neoplanta의 임상적 유효성과 안전성에 대한 연구

박광민,이승규,이영주,전훈배,황신 대한외과학회 1997 대한외과학회 학술대회 초록집 Vol.1997 No.5

서울중앙병원 간이식 현황

박광민,이승규,이영주,전훈배,남창우,김성철,조용필,전장용,최동락,김우영,한상훈,김경모,최규택,이문규,성규보,김인구,민병철 대한외과학회 1997 대한외과학회 학술대회 초록집 Vol.1997 No.5

High Electron Mobility Transistor의 구조와 동작 원리

박광민 순천향대학교 1988 논문집 Vol.11 No.2

In this paper, the structure and the operational principle of the High Electron Mobility Transistor(HEMT) known to be the superfast transistor are precisely analyzed. The structure of HEMT's is basically constituted with the AlGaAs/GaAs heterojunction. Thus, the fabrication method of this heterostructure is inspected and the contribution of each layer to HEMT's operation is presented. The analyzed HEMT's structure and the presented operational principle would be a theoretical basement in developing simulation models for characterisitics of HEMT's.

Short Channel MOSFET 의 Ⅰ-Ⅴ 특성 해석

박광민 순천향대학교 1988 논문집 Vol.11 No.4

In this paper, including the carrier drift velocity effect and the short channel effect, the I-V characteristics of short channel MOSFET's is analyzed. Introducing the concept of correction factor, errors between simulated results and experimental data existed in previous papers are sufficiently reduced with the precise analysis of the field dependence of mobility. In the saturation region, using the geometrical model structure, the current increasement in this region is also analyzed, and the fitting parameter adopted in former papers is no longer needed. Simulated results with this analysis are in good agreement with experimental data for 1㎛-channel length device.

새로운 MOS 피크 디텍터의 설계

박광민 순천향대학교 부설 산업기술연구소 2000 순천향 산업기술연구소논문집 Vol.6 No.1

In this paper, a new MOS peak detector is presented. Designed for monolithic and low-power characteristics, this MOS peak detector can be integrated easily on the same chip as a module of large communication systems. The simulation results of this peak detector which was composed with four NMOSs and two capacitors show the power dissipation of 0.97mW and the good operations for 2GHz operating pulse frequency. Therefore, it may be used as a functional block for various signal processing systems.

RFID 시스템의 저가격화를 위한 간단한 CMOS 정류기의 설계

박광민 순천향대학교 부설 산업기술연구소 2004 순천향 산업기술연구소논문집 Vol.10 No.2

In this paper, a simple CMOS rectifier for low-cost RFID systems is proposed. The presented RFID CMOS rectifier is designed for supplying sufficiently high DC output voltages for driving the microchip in the RFID transponder for the frequency range from HF to microwave. The simulation results obtained with SPICE for frequencies of 13.56㎑, 915㎒, and 2.45㎓ which are commonly used in RFID systems show the well rectified DC output voltages for the minimum input vaoltages less than 1V. And the designed RFID CMOS rectifier shows the DC output voltages of 0.8V, 1.5V,and 2.8V for the peak-to-peak input voltages of 1V, 2V, and 4V, respectively.

생체간이식 공여자 선정기준

박광민 대한간학회 2005 Clinical and Molecular Hepatology(대한간학회지) Vol.11 No.2(S)

새로운 1.5V 1.9㎓ CMOS 2단 저잡음 증폭기의 설계

박광민,김은성 순천향대학교 부설 산업기술연구소 2004 순천향 산업기술연구소논문집 Vol.10 No.2

In this paper, a new 1.5V 1.9㎓ CMOS two-Stage low noise amplifier (LNA) is presented. The proposed LNA is designed for obtaining the high gain and the low noise figure (NF) by the grounded-gate cascoded CMOS architecture. The simulation results at 1.9㎓ obtained by Serenade show the peak gain of 23.4㏈, the NF of 3.45㏈,and 3㏈ bandwidth of 1.65㎓~1.97㎓ for a 1.5V supply voltage.