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Low Voltage a-IGZO Thin Film Transistor Using Tantalum Oxide by Thermal Oxidation
Eun Seong Yu,Seung Gyun Kim,Seo Jin Kang,Hyuk Su Lee,Jong Mo Lee,Seung Jae Moon,Byung Seong Bae 대한금속·재료학회 2024 ELECTRONIC MATERIALS LETTERS Vol.20 No.2
Low voltage oxide thin-fi lm transistors (TFTs) operating below 1.0 V were developed using a high dielectric constanttantalum oxide produced by thermal oxidation. Thermal oxidation was carried out at 400, 500 and 600 °C under an oxygenatmosphere. The tantalum oxide was evaluated by X-ray photoelectron spectroscopy (XPS). XPS confi rmed the bindingenergy of Ta4f, indicating the binding state of tantalum oxide. The bottom gate oxide TFT with the gate insulator of tantalumoxide grown at 500 °C exhibited mobility of 26.7 cm 2 /V s and a threshold voltage of 1.3 V. The transfer characteristics atthe drain voltages below 1.0 V show its applicability to low voltage operation below 1 V. The bootstrapped inverter withdeveloped oxide TFTs operated well at the 1.0 and 2.0 V operation voltages.
고온에서 급속열산화법으로 형성된 탄탈륨산화막의수소응답특성
김성진 한국전기전자학회 2023 전기전자학회논문지 Vol.27 No.1
Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature ofless than 250 °C, the sample with MIS structure based on the SiC substrate of wide-band gap energy wasmanufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectriclayer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at hightemperatures. It was formed by RTO at a temperature of 900 °C with tantalum. The thickness, depth profiles, andleakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in thetemperature range from room temperature to 400 °C for hydrogen gas concentrations from 0 to 2,000 ppm. As aresult, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds. 약 1.12 ev의 밴드갭 에너지를 갖는 실리콘은 동작 온도가 250 ℃ 이하로 제한되어, 밴드갭 에너지가 큰 SiC 기판을 이용한MIS(metal-insulator-semiconductor) 구조의 시료를 제작하여 고온에서 수소 응답 특성을 고찰하였다. 적용된 유전체 박막은 수소가스에 대해 침투성이 강하고 고온에서 안정성을 보이는 탄탈륨 산화막(Ta2O5)으로, 스퍼터링으로 증착된 탄탈륨(Ta)을 900 °C의 온도에서 급속열산화법(RTO)으로 형성하였다. 이렇게 형성된 탄탈륨 산화막은 TEM, SIMS, 및 누설전류 측정을 통해, 두께, 원소들의 깊이 분포 및 절연특성을 분석하였다. 수소가스 응답특성은 0부터 2,000 ppm의 수소가스 농도에 대해, 상온으로부터 200와 400 ℃의 온도에서 정전용량의 변화로 평가하였다. 그 결과, 시료로부터 감도가 우수하고, 약 60초의 응답 시간을 나타내는 특성을 확인하였다.
도칠훈,최상진,문성인,윤문수,육경창,김상길,이주원,Doh, Chil-Hoon,Choi, Sang-Jin,Moon, Seong-In,Yun, Mun-Su,Yug, Gyeong-Chang,Kim, Sang-Gil,Lee, Ju-won 한국전기화학회 2003 한국전기화학회지 Vol.6 No.2
[ $RuCI_3{\cdot}xH_2O$ ]로부터 제조한 비정질의 $RuO_2{\cdot}nH_2O$을 사용하여 탄탈륨 집전체상의 수퍼캐패시터 전극을 제조하였다. $RuO_2{\cdot}nH_2O$ 전극과 4.8 M 황산 전해액을 사용하여 $RuO_2$ 수퍼캐패시터를 제조하였다. 탄탈륨 박막은 0.0-1.1 V(vs.SCE)에서 안정적임을 AC impedance로 확인하고 수퍼캐패시터에 적용하였다. 루테늄 산화물 수퍼캐패시터는 약 1.0 V(vs. SCE)이상에서 비가역 가수분해 반응이 진행되었다 수퍼캐패시터를 0.5V(vs. SCE)의 protonation leve을 조정하고, 전압범위를 1V로 하여 충방전 시험할 경우 우수한 특성을 나타내었다. 이때 전극전위는 $-0.004\~0.995V(vs.SCE)$의 범위이고 positive 전극 및 negative 전극의 전위범위는 각각 $-0.004\~0.515V(vs.SCE)$ 및 $-0.515\~0.995V(vs.SCE)$이었다. The electrode for a supercapacitor was prepared using an amorphous ruthenium oxide, which was synthesized from ruthenium trichloride hydrate$(RuO_2{\cdot}nH_2O)$. A supercapacitor was assembled with an electrode of ruthenium oxide material on a current collector of tantalum, and an electrolyte of 4.8 M sulfuric acid. The result of the AC impedance analyses on $Ta/H_2SO_4(4.8 M)/Pt$ cell showed that tantalum was stable at the potential range of $0.0\~1.1V(vs. SCE)$. Therefore, Ta film could be used the supercapacitor as a current collector. The irreversible hydrolysis in the supercapacitor occurred over ca. 1.0V(vs.SCE) when the supercapacitor was protonated to 0.5V(vs. SCE). The supercapacitor protonated to 0.5V(vs.SCE) showed good electrochemical properties when it was tested at the potential range of 1.0V in the charge-discharge test. The potential range of the electrodes including the positive and the negative electrode was varied between -0.004 and 0.995V(vs. SCE). The potential ranges of the positive and the negative electrode were $-0.004\~0.515V(vs.\;SCE)\;and\; 0.515\~0.995V(vs.\;SCE)$, respectively.
탄탈륨 산화물의 마그네슘 가스환원에 의한 탄탈륨 금속분말 제조
이동원,Lee, Dong-Won 한국분말야금학회 2018 한국분말재료학회지 (KPMI) Vol.25 No.5
Metallic tantalum powder is manufactured by reducing tantalum oxide ($Ta_2O_5$) with magnesium gas at 1,073-1,223 K in a reactor under argon gas. The high thermodynamic stability of magnesium oxide makes the reduction reaction from tantalum oxide into tantalum powder possible. The microstructure after the reduction reaction has the form of a mixture of tantalum and magnesium oxide, and the latter could be entirely eliminated by dissolving in weak hydrochloric acid. The powder size in SEM microstructure for the tantalum powder increases after acid leaching in the range of 50-300 nm, and its internal crystallite sizes are observed to be 11.5 to 24.7 nm with increasing reduction temperatures. Moreover, the optimized reduction temperature is found to be 1,173 K as the minimum oxygen concentration is approximately 1.3 wt.%.
The study on the thickness change of tantalum oxide as voltage drop in electrolyte
Hur, Chang-Wu,Lee, Kyu-Chung The Korea Institute of Information and Commucation 2010 Journal of information and communication convergen Vol.8 No.4
Tantalum oxide ($Ta_2O_5$) films are of considerable interest for a range of application, including optical waveguide devices, high temperature resistors, and oxygen sensors. In this paper, we establish an anode oxidation process of tantalum thin film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of tantalum oxide and electrolyte. As a result of the measurement on the electrical property of tantalum oxide thin film, when the thickness of the insulator film is $1500{\AA}$, the breakdown voltage is 350volts and dielectric constant is 29.
Kim, Young-Ho,Uosaki, Kohei The Korean Electrochemical Society 2013 Journal of electrochemical science and technology Vol.4 No.4
Tantalum anodic oxide film was prepared in citric acid solution of various concentrations and the prepared Ta anodic oxide film was characterized by various electrochemical techniques and X-ray photoelectron spectroscopy (XPS). The prepared Ta anodic oxide film showed typical n-type semiconducting properties and the dielectric properties were strongly dependent on the citric acid concentration. The variation of electrochemical and electronic properties was explained in terms of electrolyte anion incorporation into the anodic oxide film, which was supported by XPS measurements.
Hu, Quanli,Park, Mi Ra,Abbas, Haider,Kang, Tae Su,Yoon, Tae-Sik,Kang, Chi Jung Elsevier 2018 MICROELECTRONIC ENGINEERING Vol.190 No.-
<P><B>Abstract</B></P> <P>The fabrication of 5×5 crossbar array with a line width of 20μm was demonstrated. The resistive switching characteristics in the bilayer structure of tantalum oxide and manganese oxide were investigated. The Ag/MnO/Ta<SUB>2</SUB>O<SUB>5</SUB>/Pt devices showed stable bipolar resistive switching properties with high resistance ratio, low switching voltage, and forming-free behavior. The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The fabrication of Ag/MnO/Ta<SUB>2</SUB>O<SUB>5</SUB>/Pt devices with 5×5 crossbar array was reported. </LI> <LI> Resistive switching properties of Ta<SUB>2</SUB>O<SUB>5</SUB> and MnO bilayer have been investigated. </LI> <LI> High resistance ratio, low switching voltage and forming-free behavior were obtained. </LI> <LI> Resistive switching was caused by formation and rupture of conducting filaments. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
에너지/환경 : 전기화학중합에 의한 폴리피롤 적용 탄탈륨 캐패시터의 특성
김재근 ( Kim Jae Geun ),여태환 ( Yeo Tae Hwan ) 한국화학공학회 2004 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.42 No.2
The characteristics of a tantalum capacitor using polypyrrole instead of MnO₂ as a solid electrolyte were studied. The polypyrrole layer was prepared by applying electrochemical oxidative polymerization galvanostatically in an aqueous solution dissolving sodium p-toluenesulfonate as a dopant. In this case an external electrode was applied to the surface of a tantalum pellet pre-coated with polypyrrole by chemical oxidative polymerization in order to give conductive property to the dielectric film because of its insulation property. It was identified that the equivalent series resistance of the reaction system decreased as the increase of the concentration of monomer pyrrole in an electrolyte and the initial polymerization on most reaction sites of the dielectric inside the pores was not completed until the ESR reached a minimum value. It was obtained from the analysis on the relation of a pyrrole monomer concentration ranged from 0.05 to 1.5㏖/ℓ and a polymerization time ranged from 1 to 5 hours that there were a critical concentration and a critical polymerization time to achieve a high degree of pore filling with polypyrrole and to form a uniform polypyrrole layer from inside parts to outside parts of the sintered pellet. The tantalum capacitor polymerized with a concentration of 0.5㏖/ℓ pyrrole for 4 hours was recorded the best properties finally.