Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure

Hyun-Soo Lee,Dong Yun Jung,Youngrak Park,Hyun-Gyu Jang,Hyung-Seok Lee,Chi-Hoon Jun,Junbo Park,Jae Kyoung Mun,Sang-Ouk Ryu,Sang Choon Ko,Eun Soo Nam 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.3

We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anodemetal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of 114 ㎂ at -15 V, a breakdown voltage of 794 V.

Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure

Lee, Hyun-Soo,Jung, Dong Yun,Park, Youngrak,Jang, Hyun-Gyu,Lee, Hyung-Seok,Jun, Chi-Hoon,Park, Junbo,Mun, Jae Kyoung,Ryu, Sang-Ouk,Ko, Sang Choon,Nam, Eun Soo The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.3

We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of $114{\mu}A$ at -15 V, a breakdown voltage of 794 V.

Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure

이현수,정동윤,박영락,장현규,이형석,전치훈,박준보,문재경,류상욱,고상춘,남은수 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.3

We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of 114 μA at -15 V, a breakdown voltage of 794 V.

공공청사 그린리모델링을 위한 데이터 정량화 시뮬레이션 모델에 관한 연구

김기석(Kim, Gi-Seok),김유민(Kim, You-Min),김종성(Kim, Jong-Seung),오세규(Oh, Se-Gyu) 대한건축학회 2014 대한건축학회논문집 Vol.30 No.10

In recent years, an international community has been trying to reduce greenhouse gas emissions and fossil energy usages in a variety of endeavors. In particular, a comprehensive and long-term policy for reducing building energy use is required since the building energy takes the biggest burden among the greenhouse gas emissions and the energy use. Advanced countries in the area of the reduction of building energy consumption, Germany, United Kingdom, United States, etc., had already established a long-term strategy and implemented the strategy to policies. EU countries established pan-national dimensions of policies such as EPBD (Energy Performance of Building Directive). A variety of regulations and supports for reducing the building energy consumption are implemented in our nation, and the corporate-driven new construction-oriented policy has been converted into the policy for improving energy performance based on existing public buildings. In this work, we propose a scheme to cut down the energy use for the existing public buildings through simulation studies. SBD (Simulation Based Design) is set up based on analysis of the existing public buildings and energy simulation tasks are performed. Then, a methodology is presented to improve the building energy efficiency implementing energy-saving elements obtained from the energy simulation tasks.

호모다인 검파방식을 이용한 X-밴드 도플러 레이더 센서의 설계 및 제작

장남영,최평석,은재정 한국융합신호처리학회 2001 융합신호처리학회 논문지 (JISPS) Vol.2 No.2

본 논문에서는 Gunn 다이오드와 SBD를 이용하여 X-밴드 내역의 송신기 및 수신기를 설계 ·제작하였다. 이 시스템은 이동 물체의 속도를 측정하는 도플러 레이더 센서로서, 이동 물체에 의해 반사된 도플러 천이 신호를 호모다인 검파방식을 통해 검출한다. 실험을 통해 송신기의 발진조건은 대략 도파관에 위치한 Gunn 다이오드의 지지대와 도과관의 단락판 사이의 거리가 반파장일 때 만족함을 알 수 있었으며, 제작된 도플러 레이더 센서를 이용한 이동 물체의 속도측정 오차는 1.24%로 측정 되었다. In this paper, a transmitter and a receiver using a Gunn diode and SBD was designed and fabricated in X-band. This system detects Doppler shift signal reflected by moving target through the homodyne detection, which is Doppler radar sensor for the measurement of the velocity of moving target. By the experimental results, the oscillating condition of the transmitter was satisfied at about the half wavelength between the supporting post of the Gunn diode in the waveguide and the waveguide short. And using the fabricated Doppler radar sensor, the velocity measurement deviation of moving target was 1.24%.

SiC 하이브리드 모듈을 적용한 근거리용 7kW Inverter 동작 안정성에 대한 연구

전준혁,경신수,김희준 한국정보전자통신기술학회 2019 한국정보전자통신기술학회논문지 Vol.12 No.5

This paper is concerned with the operating stability of 7kW inverter using SIC hybrid module and verifies the validity of the simulation results by comparing the result of the loss equation and the simulation result, Simulation results using Si module and SiC hybrid module are compared to compare switch loss and diode loss. Through the loss equation calculation, the conduction loss of SiC Hybrid module is 168W, switching loss is 9.3W, diode loss is 10.5nW, When compared with the simulation results, similar values were shown. As a result of comparing the simulation results of the Si module and the SiC Hybrid module, The total device loss of the Si module was 246.2W, and the total device loss of the SiC Hybrid module was 189.9W. The loss difference was 56.3W, which was about 0.8W. thereby verifying the reverse recovery characteristics of the SiC SBD. In addition, temperature saturation test was conducted to confirm the stability of SiC Hybrid module and Si module under high temperature saturation, In the case of the Si module, the output power was stopped at 4kW, and the SiC Hybrid module was confirmed to operate at 7kW. Based on this, an efficiency graph and a temperature graph are presented, and the Si module is graphed up to 4kW and the SiC Hybrid module is graphed up to 7kW. 본 논문은 SiC Hybrid module를 적용한 7kW 인버터의 동작 안정성에 관한 것으로 손실 방정식과 시뮬레이션 결과를 비교하여 시뮬레이션 결과의 유효성을 검증하였으며, 시뮬레이션을 통해 Si module과 SiC Hybrid module의 스위치 손실과 다이오드 손실을 비교하였다. 손실 방정식 계산을 통하여 SiC Hybrid module의 도통 손실은 168W, 스위칭 손실은 9.3W, 다이오드 손실은 10.5nW의 결과를 나타내었으며, 시뮬레이션 결과와 비교하였을 때 유사한 값을 나타내었다. 이를 바탕으로 Si module과 SiC Hybrid module의 시뮬레이션 결과 값 비교 결과, Si module의 총 소자 손실 값은 246.2W, SiC Hybrid module의 총 소자 손실 값은 189.9W를 나타내었으며, 손실 차이 값은 56.3W로써 약 0.8W의 효율 차이를 보였다. 이로 인하여 SiC SBD의 Reverse recovery 특성을 검증하였다. 또한 고온 포화상태에서 SiC Hybrid module 및 Si module의 안정성을 확인하기 위하여 온도 포화 테스트를 진행하였으며, Si module의 경우, 출력전력 4kW에서 동작을 멈추었고, SiC Hybrid module은 7kW까지 동작을 확인하였다. 이를 바탕으로, 효율 그래프와 온도 그래프를 제시하였으며, Si module은 4kW까지, SiC Hybrid module은 7kW까지 그래프로 나타내었다.

Guard Ring 구조에 따른 β-산화갈륨(β-Ga₂O₃) 전력 SBDs의 전기적 특성 비교

이훈기 ( Hoon-ki Lee ),조규준 ( Kyujun Cho ),장우진 ( Woojin Chang ),문재경 ( Jae-kyoung Mun ) 한국전기전자재료학회 2024 전기전자재료학회논문지 Vol.37 No.2

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (Ron,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (Rs) in the nonlinear section extracted using Cheung’s formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

금속 가드 링이 SiC 쇼트키 다이오드의 항복전압에 미치는 영향

김성진,Kim, Seong-Jin 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.10

In order to fabricate a high breakdown SiC-SBD (Schottky barrier diode), we investigate an effect on metal guard ring (MGR) in breakdown characteristics of the SiC-SBD. The breakdown characteristics of MGR-type SiC-SBD is significantly dependent on both the guard ring metal and the alloying time of guard ring metal. The breakdown characteristics of MGR-type SiC-SBDs are essentially improved as the alloying time of guard ring metal is increased. The SiC-SBD without MGR shows less than 200 V breakdown voltage, while the SiC-SBD with Al MGR shows approximately 700 V breakdown voltage. The improvement in breakdown characteristics is attributed to the field edge termination effect by the MGR, which is similar to an implanted guard ring-type SiC-SBD. There are two breakdown origins in the MGR-type SiC-SBD. One is due to a crystal defects, such as micropipes and stacking faults, in the Epi-layers and the SiC substrate, and occurs at a lower electric field. The other is due to the destruction of guard ring metal, which occurs at a higher electric field. The demolition of guard ring metal is due to the electric field concentration at an edge of Schottky contact metal.

SiC SBD 적용한 고효율 Bridgeless PFC 컨버터에 대한 연구

전준혁(Joon-Hyeok Jeon),김형식(Hyung-Sik Kim),김희준(Hee-Jun Kim),안준선(Joon-Seon Ahn) 한국정보전자통신기술학회 2019 한국정보전자통신기술학회논문지 Vol.12 No.4

본 논문은 Bridgeless PFC Converter의 환류 다이오드를 SiC SBD(Schottky Barrier Diode)로 제안하여 고효율화를 달성하였다. 또한 Bridgeless PFC Converter의 동작원리에 대한 설명을 통해 Bridgeless PFC Converter에서 환류 다이오드의 도통 구간을 나타내어 환류 다이오드의 손실에 따른 시스템 손실의 기여도를 검증하였고, SiC SBD 소자의 물성 및 역 회복 특성에 따른 장점을 설명하였으며 턴 온 손실과 턴 오프 손실을 측정하여 효율을 비교 분석하고, 소자 단품 특성을 확인하기 위한 다이오드의 역회복 파형 분석을 통하여 소자의 역회복 손실을 계산하였다. 소자 특성을 고려한 시뮬레이션 결과 값을 도출해내어 실제 시스템의 파형 분석 및 비교를 통해 그 결과 값을 검증하였다. 소자 특성을 고려하기 위하여 PSIM의 Thermal Module을 사용하여 시뮬레이션을 진행하였으며, 그 결과로 턴온 손실 0.6W, 턴 오프 손실 20.6W로 전체 스위칭 손실은 22.2W로 나타났다. 시작품 실험을 통하여 분석한 결과 턴온 손실 0.608W, 턴 오프 손실 21.62W로 전체 스위칭 손실 22.228W의 결과 값을 도출하였고, 두 결과 값의 비교로 실험 방법의 타당성을 입증하였다. 또한 최대 효율 94.58%의 고효율을 달성하였다. This paper proposes a flyback diode of bridgeless PFC converter as SiC SBD (Schottky Barrier Diode) to achieve high efficiency. In addition, through the explanation of the operation principle of the bridgeless PFC converter, the conduction section of the freewheel diode is shown in the bridgeless PFC converter to verify the contribution of system loss due to the loss of the freewheel diode. The advantages of the SiC SBD device"s physical properties and the reverse recovery characteristics are explained, and the efficiency is measured by measuring the turn-on and turn-off losses. The loss was calculated. The simulation results were calculated in consideration of device characteristics and verified through the waveform analysis and comparison of the actual system. In order to consider the device characteristics, the simulation was conducted using the thermal module of PSIM. As a result of the prototype test, the turn-on loss was 0.608W and the turn-off loss was 21.62W, resulting in the total switching loss of 22.228W. The comparison of the two results proved the validity of the experimental method. In addition, a high efficiency of 94.58% is achieved.

향상을 위한 self bag-drop system(무인수하물처리시스템) 적용가능성 연구

이강석,지민석 한국항공경영학회 2014 한국항공경영학회 추계학술대회 Vol.2014 No.-

미국, 유럽과 같은 해외 항공선진국의 경우 자국의 발전된 IT융합기술을 접목한 공항수하물처리시스템의 개발 및 실용화를 통해 세계 공항산업을 선점하고 있다. 반면, 국내공항들은 공항수하물처리시스템 기술분야 대부분을 해외에 의존하고 있는 실정이다. 공항인프라의 효율화를 위해 Self Bag Drop 시스템의 도입을 적극 추진하는 것이 필요하며 국내공항 및 항공사 환경에 최적화된 SBD System을 개발, 적용, 운영해야 할 것이다. 본 논문에서는 해외 선진공항에서 운용되고 있는 SBD System에 대한 동향 및 운영 현황을 파악하고, 이를 토대로 추후 국내에서의 개발 및 적용 가능성을 살펴보고자 한다. Advanced countries in the aviation industry, especially the United States and European Union, develop and commercialize their own SBD system integrated with IT convergence technology, dominating the international market. Nevertheless, most of SBD technologies in domestic airports rely on other countries. It is imperative that internal airport operators introduce the Self Bag Drop system and produce, apply, and manage the most optimized SBD system for airports and airlines. Upon analyzing the tendency and operation of the SBD system utilized in leading international airports, this is conducted to address the possibility of the future implementation in domestic airports.