식물생장조절제 처리가 Himrod Seedless 포도의 과실품질에 미치는 영향

김월수,김광수 全南大學校 農業科學技術硏究所 1999 農業科學技術硏究 Vol.34 No.-

조생종 포도 Himrod Seedless 품종의 과립을 비대와 과실성숙을 촉진시키기 위하여 만개기, 만개기+만개후 10일, 및 만개기+만개후 10일+20일에 Ga₃ 용액을 각각 1회, 2회 및 3회씩 침지처리하였다. 과립중은 GA₃ 1차 처리에 의하여 현저히 비대가 촉진되었고 처리횟수가 2회 및 3회로 늘어날수록 과립비대도 증가하는 경향을 나타내었다. GA₃ 처리에 의하여 과방경(果房梗)이 현저히 비대되었고 과립 탈립력이 강화되었다. GA₃ 2회 및 3회 처리에 의하여 과립이 크게 비대됨에 따라 과립의 가용성 고형물 함량이 다소 감소되었고 유기산 함량은 차이가 없었다. GA₃, GA₄+7 및 BA 용액을 처리한 결과 과립중과 과방중은 GA₄+7 처리구에서 가장 무거웠으나 가용성 고형물 함량이 낮아서 당산비가 최저수준을 나타내었고 수기도 무처리구보다 6일 정도 지연되었다. 이상의 결과로 보아 포도 Himrod Seedless 품종의 재배는 만개기에 GA₃ 50ppm 용액에 화방침지하고 10일후 제2차로 GA₃ 100ppm 용액에 침지처리하는 것이 착립과 과립비대에 효과적인 것으로 판단되었다. To investigate the effects of berry enlargement and maturity by growth regulators treatment this experiment was carried out by dipping berry cluster into 50 to 100 ppm GA₃, GA₄+7, and benzyladenine (BA) at full-bloom, 10 and/or 20 days after full-bloom of 'Himrod Seedless' grape. Berry weight increased outstandingly by GA₃ treatment, and GA₃ treatment for three times showed more increased berry weight than that twice and once. GA₃ treatment resulted in increased cluster stalk diameter which induced higher berry removal force. However, soluble solid content in berries treated for two to three times with GA₃ decreased due to dilution effect of berry size. Organic acid contents in berries were not influenced by GA₃ treatment. Among the three kinds of plant growth regulators such as GA₃, GA₄+7, and BA, GA₄+7 treatment gave rise to the biggest berry growth, but lower soluble solid content, sugar/acid ratio and delayed maturity upto six days in comparison to control. In conclusion the best result in berry growth and quality could be obtained by dipping the berry cluster into 50ppm GA₃ at full-bloom, and 100ppm GA₃ at 10 days after full-bloom.

RF 마그네트론 스퍼터링법으로 합성된 Ga-doped ZnO 박막의 특성평가

윤영훈,Yun, Young-Hoon 한국결정성장학회 2021 韓國結晶成長學會誌 Vol.31 No.2

RF 마그네트론 스퍼터링 공정에 의해 Ga-doped ZnO 박막이 O2 및 Ar 분위기 하에서 증착 조건에 따라 합성되었으며, N2 분위기에서, 600℃에서 급속열처리(RTA)를 실시하였다. 증착된 ZnO : Ga 박막에 대해 두께를 측정하였고, XRD 패턴 분석에 의해 결정상을 조사하였으며, FE-SEM, AFM 이미지에 의해 박막의 미세구조를 관찰하였다. O2 및 Ar 분위기 기체 종류별로 형성된 박막들의 증착 조건에 따라 X-선 회절 패턴의 (002)면의 세기는 상당한 차이를 나타냈다. O2 조건에서는 Ga doping이 이루어진 단일 박막의 경우에서는 강한 세기의 회절피크가 관찰되었다. O2 및 Ar 조건에서는 Ga doping이 이루어진 다층박막의 경우에서는 다소 약한 세기의 (002) 면의 피크만을 나타내었다. FE-SEM image에서는 박막의 표면입자의 크기는 두께가 증가함에 따라 입자크기가 다소 증가하는 것으로 관찰되었다. O2 및 Ar 분위기 조건 하에서, Ga doping이 이루어진 다층박막의 경우에서는, 비저항은 6.4 × 10-4Ω·cm을 나타냈고, O2 분위기 조건하에서, Ga doping이 이루어진 단일 박막의 경우에서는 저항값이 감소하였고, Ga-doped ZnO 박막의 두께가 2 ㎛로 증가하면서 저항이 감소하였으며, 1.0 × 10-3 Ω·cm의 비교적 낮은 비저항 값을 나타내었다. Ga-doped ZnO thin films by RF magnetron sputtering process were synthesized according to the deposition conditions of O2 and Ar atmosphere gases, and rapid heat treatment (RTA) was performed at 600℃ in an N2 atmosphere. The thickness of the deposited ZnO : Ga thin film was measured, the crystal phase was investigated by XRD pattern analysis, and the microstructure of the thin film was observed by FE-SEM and AFM images. The intensity of the (002) plane of the X-ray diffraction pattern showed a significant difference depending on the deposition conditions of the thin films formed by O2 and Ar atmosphere gas types. In the case of a single thin f ilm doped with Ga under O2 conditions, a strong diffraction peak was observed. Under O2 and Ar conditions, in the case of a multilayer thin film with Ga doping, only a peak on the (002) plane with a somewhat weak intensity was shown. In the FE-SEM image, it was observed that the grain size of the surface of the thin film slightly increased as the thickness increased. In the case of a multilayer thin film with Ga doping under O2 and Ar atmosphere conditions, the specific resistance was 6.4 × 10-4 Ω·cm. In the case of a single thin film with Ga doping under O2 atmosphere conditions, the resistance of the thin film decreased. The resistance decreased as the thickness of the Ga-doped ZnO thin film increased to 2 ㎛, showing relatively a low specific resistance of 1.0 × 10-3 Ω·cm.

Ga₂O₃와 4H-SiC Vertical DMOSFET 성능 비교

정의석,김영재,구상모,Chung, Eui Suk,Kim, Young Jae,Koo, Sang-Mo 한국전기전자학회 2018 전기전자학회논문지 Vol.22 No.1

산화갈륨 ($Ga_2O_3$)과 탄화규소 (SiC)는 넓은 밴드 갭 ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV)과 높은 임계전압을 갖는 물질로서 높은 항복 전압을 허용한다. 수직 DMOSFET 수평구조에 비해 높은 항복전압 특성을 갖기 때문에 고전압 전력소자에 많이 적용되는 구조이다. 본 연구에서는 2차원 소자 시뮬레이션 (2D-Simulation)을 사용하여 $Ga_2O_3$와 4H-SiC 수직 DMOSFET의 구조를 설계하였으며, 항복전압과 저항이 갖는 trade-off에 관한 파라미터를 분석하여 최적화 설계하였다. 그 결과, 제안된 4H-SiC와 $Ga_2O_3$ 수직 DMOSFET구조는 각각 ~1380 V 및 ~1420 V의 항복 전압을 가지며, 낮은 게이트 전압에서의 $Ga_2O_3-DMOSFET$이 보다 낮은 온-저항을 갖고 있지만, 게이트 전압이 높으면 4H-SiC-DMOSFET가 보다 낮은 온-저항을 갖을 수 있음을 확인하였다. 따라서 적절한 구조와 gate 전압 rating에 따라 소자 구조 및 gate dielectric등에 대한 심화 연구가 요구될 것으로 판단된다. Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

ε-Ga₂O₃ 박막의 성장과 상전이를 이용한 고품질 β-Ga₂O₃ 박막의 제조

이한솔,김소윤,이정복,안형수,김경화,양민,Lee, Hansol,Kim, Soyoon,Lee, Jungbok,Ahn, Hyungsoo,Kim, Kyounghwa,Yang, Min 한국결정성장학회 2021 한국결정성장학회지 Vol.31 No.1

Ga2O3의 준 안정상인 ε-Ga2O3는 육각형 구조나 준 육각형 구조를 가지는 기판들과 정합성이 우수하여 β-Ga2O3보다 상대적으로 쉽게 낮은 표면 거칠기와 결함 밀도를 갖는 박막을 얻을 수 있다. 이에 ε-Ga2O3를 고온에서 열처리하면 β-Ga2O3로 상전이 되는 특성을 이용하여 표면 거칠기와 결함 밀도가 낮은 고품질 β-Ga2O3 박막의 제조를 시도하였다. 이를 위해서는 고품질 ε-Ga2O3 박막의 성장이 선행되어야 하므로 본 연구에서는 갈륨과 산소의 공급 유량 비율에 따른 Ga2O3 박막의 구조적, 형태적 특성을 분석함으로써 최적의 유량 비율을 조사하였다. 추가로 열처리 조건과 ε-Ga2O3 박막에 혼입된 β-Ga2O3가 상전이 이후 β-Ga2O3의 결정성에 미치는 영향도 함께 조사하였다. ε-Ga2O3, a metastable phase of Ga2O3, has excellent compatibility with substrates having a hexagonal structure or a quasi-hexagonal structure, so that a film having a relatively lower surface roughness and defect density than β-Ga2O3 can be obtained easily. Accordingly, we attempted to fabricate a high-quality β-Ga2O3 film with a low surface roughness and defect density using the property of phase transition to β-Ga2O3 when ε-Ga2O3 is annealed at a high temperature. For this, the growth of high-quality ε-Ga2O3 films must be preceded. In this study, the optimal flow rate was investigated by analyzing the structural and morphological characteristics of the ε-Ga2O3 film according to the supplied precursor ratio. In addition, the annealing condition and the effect of β-Ga2O3 mixed in the ε-Ga2O3 film on the crystallinity of β-Ga2O3 after phase transition were also investigated.

Effect of Foliar Application of Gibberellic Acid and Machine Oil Emulsion Mixture on Flowering and Fruit Quality of Satsuma Mandarin (C. unshiu Marc. cv. Miyagawa) Cultivated on Open Fields

Seok-Beom Kang,Young-Eel Moon,Seung-Gab Han,Young-Hun Choi 한국토양비료학회 2014 한국토양비료학회지 Vol.47 No.6

In satsuma mandarin (C. unshiu Marc. cv. Miyagawa), alternate bearing is frequently occurred. It is very difficult to control and maintain the optimum production because satsuma mandarin is a very sensitive citrus cultivar. We carried out the experiment to find out the effects of foliar application of gibberellic acid (GA₃) and machine oil emulsion mixture on flowering and fruit quality of satsuma mandarin grown on open field. The treatments were composed of control (no application), GA₃ (25, 50 and 100 mg?L<SUP>-1</SUP>), machine oil emulsion 100 times and mixture of GA₃ (25 and 50 mg?L<SUP>-1</SUP>) with machine oil emulsion 100 times on 16 year-old ‘Miyagawa’ satsuma mandarin on December 30, 2012. Foliar application of GA₃ during winter season led to a reduction of the flowering in the following year. GA₃ decreased flowering in dose dependant manner. However, application of GA₃ and machine oil emulsion (100 times-diluted mixture) inhibited effectively the flowering compared to GA₃ only. Also, flower-leaf ratio was significantly decreased by the application of GA₃3 25 (0.54) and 50 (0.41) mg?L<SUP>-1</SUP> with machine oil emulsion mixture in comparison to GA₃ 25 (0.86) and 50 (0.60) mg?L<SUP>-1</SUP> only. The number of leaves per fruit increased in application of GA₃ and machine oil emulsion mixture as concentration of GA₃ increased. Fruit weight and sugar-acid ratio also increased in comparison to the control whereas fruit size, soluble solid content and acidity remained unchanged. From the results, it was suggested that GA₃ application can reduce the number of flowers on the alternate bearing of satsuma mandarin. Moreover, application of GA₃ (25 and 50 mg?L<SUP>-1</SUP>) with machine oil emulsion 100 times mixture can reduce the flowering effectively without altering fruit maturity and soluble solid contents. Therefore, it can be concluded that the application of GA₃ 25 and 50 mg?L<SUP>-1</SUP> with machine oil emulsion 100 times might be useful in controlling alternate bearing in satsuma mandarin.

Effect of Foliar Application of Gibberellic Acid and Machine Oil Emulsion Mixture on Flowering and Fruit Quality of Satsuma Mandarin (C. unshiu Marc. cv. Miyagawa) Cultivated on Open Fields

강석범,문영일,한승갑,최영훈 한국토양비료학회 2014 한국토양비료학회지 Vol.47 No.6

In satsuma mandarin (C. unshiu Marc. cv. Miyagawa), alternate bearing is frequently occurred. It is verydifficult to control and maintain the optimum production because satsuma mandarin is a very sensitive citruscultivar. We carried out the experiment to find out the effects of foliar application of gibberellic acid (GA3) andmachine oil emulsion mixture on flowering and fruit quality of satsuma mandarin grown on open field. Thetreatments were composed of control (no application), GA3 (25, 50 and 100 mg․L-1), machine oil emulsion 100times and mixture of GA3 (25 and 50 mg․L-1) with machine oil emulsion 100 times on 16 year-old ‘Miyagawa’satsuma mandarin on December 30, 2012. Foliar application of GA3 during winter season led to a reduction ofthe flowering in the following year. GA3 decreased flowering in dose dependant manner. However,application of GA3 and machine oil emulsion (100 times-diluted mixture) inhibited effectively the floweringcompared to GA3 only. Also, flower-leaf ratio was significantly decreased by the application of GA3 25 (0.54)and 50 (0.41) mg․L-1 with machine oil emulsion mixture in comparison to GA3 25 (0.86) and 50 (0.60) mg․L-1only. The number of leaves per fruit increased in application of GA3 and machine oil emulsion mixture asconcentration of GA3 increased. Fruit weight and sugar-acid ratio also increased in comparison to the controlwhereas fruit size, soluble solid content and acidity remained unchanged. From the results, it was suggestedthat GA3 application can reduce the number of flowers on the alternate bearing of satsuma mandarin. Moreover, application of GA3 (25 and 50 mg․L-1) with machine oil emulsion 100 times mixture can reduce theflowering effectively without altering fruit maturity and soluble solid contents. Therefore, it can be concludedthat the application of GA3 25 and 50 mg․L-1 with machine oil emulsion 100 times might be useful incontrolling alternate bearing in satsuma mandarin.

Ga 함유량에 따른 Co-evaporation 방법에 의해 제조된 Cu(In_1-x,Ga_x)Se₂ 박막 태양전지의 구조 및 전기적 특성

임종엽,이용구,박종범,김민영,양계준,임동건,Lim, Jong-Youb,Lee, Yong-Koo,Park, Jong-Bum,Kim, Min-Young,Yang, Kea-Joon,Lim, Dong-Gun 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.9

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.

카세트 기반 자동합성장치를 사용한 [68Ga]Ga-FAPI-04의 합성방법 연구

Jun Young PARK,Won Jun KANG 대한임상검사과학회 2024 대한임상검사과학회지(KJCLS) Vol.56 No.1

[68Ga]Ga-FAPI-04는 암세포에 과발현 되어 있는 fibroblast activation protein (FAP)에 특이적으로 결합하는 FAP 저해제(FAP inhibitor, FAPI)에 방사성동위원소 68Ga을 표지한 방사성의약품이다. 본 연구에서는 국내에서 제작된 카세트기반 자동합성장치를 사용하여 [68Ga]Ga-FAPI-04를 제조하는 방법을 개발하였다. [68Ga]Ga-FAPI-04의 합법을 개발하기 위해 완충액 HEPES의 농도, 반응시간, FAPI-04 전구체 양, 반응온도에 따른 표지효율을 확인하였다. [68Ga]Ga-FAPI-04는 2 M HEPES를 사용하여 pH 3.85에서 반응할 경우 가장 높은 표지효율을 획득할 수 있었고, 반응시간이 10분일 경우와 25 μg의FAPI-04 전구체를 사용할 경우 및 100℃에서 반응할 경우 가장높은 표지효율을 획득할 수 있었다. 또한 최종 합성된[68Ga]Ga-FAPI-04는 모든 품질기준을 만족하여 본 연구를 통해 개발된 [68Ga]Ga-FAPI-04의 합성법은 FAPI 기반 방사성의약품생산에 활용도가 높을 것으로 예상된다. [68Ga]Ga-FAPI-04 is a promising radiopharmaceutical that binds specifically to fibroblast activation protein, which is overexpressed in more than 90% of malignant epithelial tumors but not in normal healthy tissue. This study aimed to develop an efficient method for producing 68Ga-labelled FAPI-04 using a cassette-based automated synthesizer. [68Ga]GaCl3 was eluted from an Eckert & Ziegler Medical germanium-68/gallium-68 generator using 2.5 mL of 0.1 M HCl. The synthesis of the [68Ga]Ga-FAPI-04 was performed using different concentrations of HEPES (1∼2.5 M; 4-(2-hydroxyethyl) piperazine- 1-ethanesulfonic acid) in 3∼10 minutes; amounts of FAPI-04 precursor (5∼50 μg) and reaction temperature (25℃∼100℃) were optimized on the BIKBoxⓇ synthesizer. The labeling efficiency of [68Ga]Ga-FAPI-04 was greater than 96% (decay corrected) using 25 μg FAPI-04 synthesized in 10 minutes at 100°C in 2 M HEPES (pH 3.85), and its stability was greater than 99% at 6 hours. The total synthesis time of [68Ga]Ga-FAPI-04 was 32.4 minutes, and the product met all quality control criteria. In this study, we developed and optimized a labeling method using [68Ga]Ga- FAPI-04 using a cassette-based synthesizer. The devised method is expected to be useful for supplying [68Ga]Ga-FAPI-04 for diagnosis in clinical practice.

Ga₂O₃와 4H-SiC Vertical DMOSFET 성능 비교

정의석(Eui Suk Chung),김영재(Young Jae Kim),구상모(Sang-Mo Koo) 한국전기전자학회 2018 전기전자학회논문지 Vol.22 No.1

산화갈륨 (Ga₂O₃)과 탄화규소 (SiC)는 넓은 밴드 갭 (Ga₂O₃-4.8∼4.9 eV, SiC-3.3 eV)과 높은 임계전압을 갖는 물질로서 높은 항복 전압을 허용한다. 수직 DMOSFET 수평구조에 비해 높은 항복전압 특성을 갖기 때문에 고전압 전력소자에 많이 적용되는 구조이다. 본 연구에서는 2차원 소자 시뮬레이션 (2D-Simulation)을 사용하여 Ga₂O₃와 4H-SiC 수직 DMOSFET의 구조를 설계하였으며, 항복전압과 저항이 갖는 trade-off에 관한 파라미터를 분석하여 최적화 설계하였다. 그 결과, 제안된 4H-SiC와 Ga₂O₃ 수직 DMOSFET구조는 각각 ∼1380 V 및 ∼1420 V의 항복 전압을 가지며, 낮은 게이트 전압에서의 Ga₂O₃-DMOSFET이 보다 낮은 온-저항을 갖고 있지만, 게이트 전압이 높으면 4H-SiC-DMOSFET가 보다 낮은 온-저항을 갖을 수 있음을 확인하였다. 따라서 적절한 구조와 gate 전압 rating에 따라 소자 구조 및 gate dielectric등에 대한 심화 연구가 요구될 것으로 판단된다. Gallium oxide (Ga₂O₃) and silicon carbide (SiC) are the material with the wide band gap (Ga₂O₃-4.8∼4.9 eV, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of Ga₂O₃ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of Ga₂O₃ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and Ga₂O₃ vertical DMOSFET have similar blocking voltage (Ga₂O₃-1380 V, SiC-1420 V) and then when gate voltage is low, Ga₂O₃-DMOSFET has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high , 4H-SiC-DMOSFET has lower on-resistance than Ga₂O₃-DMOSFET. Therefore, we concluded that the material of power device should be considered by the gate voltage.

조선후기 가사의 복합적 성격 규정 고찰

김형태 한국고전문학회 2022 古典文學硏究 Vol.62 No.-

The purpose of this thesis is to prepare a basis for discussion related to the definition of genre identity of Ga-sa by examining the complex characteristics of Ga-sa in the late Jo-seon Dynasty. In this paper, based on the existing research on the characteristics of Ga-sa in the late Jo-seon Dynasty, the research method was divided into three layers: class in charge, content, and form of expression. Through these works, it was possible to confirm the cause of the complex expression of the characteristics of the Ga-sa of the late Jo-seon Dynasty as follows. First, the dominant thematic style in the late Jo-seon dynasty is the result of the expression of polyphonic desires of the various people in charge, which formed a factor in which the types of Ga-sa works were diversified according to the movement to seek a new driving force for change. The expression of these polyphonic desires can be confirmed in Ga-sa works using dialogues and Gyu-bang[閨房] Ga-sa and the result is the result of promoting creation and transmission based on the literacy acquired through a certain education. Second, the separation and combination by paragraph of the Ga-sa for reality criticism and the Ga-sa for travelling is the result of the expression of the artist's consciousness to record various related contents through various sanctions in one work. In this way, the Ga-sa of the late Jo-seon Dynasty strengthen the recordability to strengthen the realism and sense of presence, and in terms of content, the separation of individual paragraphs according to the changes in time and space and thematic integration are pursued. Third, Ga-sa works that take customs and social conditions as their main sanctions are directed toward narratives with the reader in mind the convenience and efficiency of reading by using an expression form that lists specific facts or objects in consideration of a rhyme suitable for reading. In addition, the Ga-sa of the epics of the late Jo-seon Dynasty also have a character close to reading. This allows the reader to empathize by indirectly experiencing the author's realistic story embodied in the work and acquire a sense of identity with the author, which is embodied by arousing sympathy or compassion in the reader through the author's meticulous records. Through the above factors, it can be said that the Ga-sa of the late Jo-seon Dynasty expanded to the realm of reading, sympathy, and sharing by the public. In addition, it can be said that it was inherited even to the Ga-sa works of the modern enlightenment, and it could be said that it showed an aspect closer to reading material thanks to the appearance and enjoyment of the media. 본 논문의 목적은 조선후기 가사의 복합적 특성을 살펴봄으로써 가사의 장르적 정체성 규정과 연관된 논의의 기반을 마련하는 데 있다. 본 논문에서는 그 연구방법으로 조선후기 가사의 특성에 대한 기존 연구에 입각하여 이를 담당층, 내용, 표현 형식의 세 층위로 나누어 살펴보았다. 이러한 작업을 통해서 다음과 같이 조선후기 가사의 특성이 복합적으로 발현된 동인을 확인할 수 있었다. 첫째, 조선후기 가사 작품에 주제적 양식이 지배적인 것은 다양한 담당층이 다성적 욕구를 표출한 결과이며, 이는 새로운 변화의 동력을 모색하려는 움직임에 따라 가사 작품 유형이 다변화하는 요인을 형성한 것이다. 이러한 다성적 욕구 표출은 대화체를 사용한 가사 작품이나 규방가사 등에서도 확인할 수 있으며, 그 바탕에는 일정한 교육을 통해 습득한 리터러시를 바탕으로 창작과 전승을 도모한 결과가 작용한 것이다. 둘째, 현실비판가사와 기행가사의 단락별 이합은 한 작품에서 다양한 제재를 통해 여러 가지 관련 내용을 기록하려는 작가 의식의 표출 결과이다. 이처럼 조선후기 가사는 기록성을 강화하여 사실성과 현장감을 강화하는 한편, 내용상 시·공간의 흐름에 따른 개별 단락의 분리와 주제적 통합을 지향하고 있음을 살펴보았다. 셋째, 풍속이나 세태를 주요 제재로 취택한 가사 작품들은 율독에 적합하게 韻을 고려하여 특정 사실이나 사물을 열거하는 표현 형식을 활용해 독자로 하여금 독서의 편의성과 효율성을 염두에 둔 서술을 지향하고 있다. 또한 조선후기 서사가사 역시 독서물에 가까운 성격을 지니고 있는데, 이는 독자가 작품에 구현된 작가의 사실적 이야기를 간접 체험하면서 공감하고, 작가와의 동질감을 획득할 수 있으며, 이는 작가의 꼼꼼한 기록을 통해 독자로 하여금 동정이나 연민을 불러일으킴으로써 구체화된다고 할 수 있다. 이상의 동인을 통해 조선후기 가사는 대중들이 읽고 공감하며 공유하는 영역까지 그 저변을 확대했다고 할 수 있다. 또한 이는 근대계몽기의 가사 작품들까지 계승되고, 매체의 등장과 향유 조건에 힘입어 독서물에 더욱 근접한 양상을 보였다고 할 수 있다.