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WookyungSun,HyungsoonShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
In this paper, a modified charge pumping (CP) technique is proposed to determine the lateral distribution of the interface state density (Nit) near the drain junction of hot-carrier- stressed n- MOSFET's. Basically the rising and the falling slopes of the gate pulse are held constant, and the concept of \local threshold" and \local atband" voltages are used to extract the relationship between the measured Icp and the charge pumping edge. Several existing papers have proposed CP methods, but they have to differentiate the measured Icp data several times or require accurate doping proles for the channel and the S/D regions. Therefore, the distribution profile of Nit extracted by these method is not accurate. The new technique determines the charge pumping edge more exactly, and Nit can be extracted directly from experimental charge pumping results. Therefore, this method requires no information about impurity concentrations.
Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs
Wookyung Sun,Hyungsoon Shin 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.2
The temperature dependence of strainenhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schrodinger-Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.
Wookyung Sun,Sujin Choi,Hyungsoon Shin 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.5
The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schrodinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface roughness scattering. The calculated results show that, in contrast to (100)/<110> case, the longitudinal tensile strain-induced electron mobility enhancement on the (110)/<110> can be increased at high substrate doping concentration.
Effects of Shallow Trench Isolation on Silicon-on-Insulator Devices for Mixed Signal Processing
HyeokjaeLee,YoungJunePark,HongShickMin,이종호,HyungsoonShin,WookyungSun,Dae-GwanKang 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
The transconductance and the low-frequency noise of SOI MOSFETs with shallow trench isolation (STI) structures are investigated qualitatively for various device sizes and three dierent gate shapes. Devices with the channel region butted to the STI region show a reduction in the mobility and the increase in the low-frequency noise as the channel width is reduced. In comparison, the devices without STI butted channel region show a much lower reduction in the mobility and increase in the noise characteristics with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identied for the first time, as the cause of these anomalous phenomena.