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Song, K.J.,Ko, R.K.,Kim, H.S.,Ha, H.S.,Ha, D.W.,Oh, S.S.,Park, C.,Yoo, S.-I.,Kim, M.W.,Kim, C.J.,Joo, J.H. Institute of Electrical and Electronics Engineers 2007 IEEE transactions on applied superconductivity Vol.17 No.2
<P>The degree of ferromagnetism of Ni-W<SUB>y</SUB> alloys decreases as W-content y increases. Both the saturation magnetization <I>M</I> <SUB>sat</SUB> and Curie temperature <I>T</I> <SUB>c</SUB> decrease linearly with W-content y, and both <I>M</I> <SUB>sat</SUB> and <I>T</I> <SUB>c</SUB> go to zero at critical concentration of y<SUB>c</SUB> ~9.50 at.% W. To compare with Ni-W alloys, the magnetic properties of a series of both as-rolled (non-textured) and annealed (biaxially textured) [Ni<SUB>97at.%</SUB>-W<SUB>3at.%</SUB>]<SUB>100-x</SUB>-Cu<SUB>x</SUB> alloy tapes with compositions x = 0, 1, 3, 5, and 7 at.%, were studied. Characterization methods included XRD analyses to investigate the biaxial texturing of the annealed [Ni-W]-Cu alloy tapes and studies of the magnetization for both as-rolled and annealed [Ni-W]-Cu alloy tapes. Both the isothermal mass magnetizations <I>M</I>(<I>H</I>) of a series of samples at different fixed temperatures and <I>M</I>(<I>T</I>) in fixed field, were measured. The effect of Cu addition on both the saturation magnetization and Curie temperature T<SUB>c</SUB> of the Ni<SUB>97at.%</SUB>-W<SUB>3at.%</SUB> alloy was investigated.</P>
Magnetism in Ni-W textured substrates for coated conductors
Song K. J.,Park Y. M.,Yang J. S.,Kim S. W.,Ko R. K.,Kim H. S.,Ha H. S,Oh S. S.,Park C.,Joo J. H.,Kim C. J. The Korea Institute of Applied Superconductivity a 2005 한국초전도저온공학회논문지 Vol.7 No.2
The magnetic properties of a series of both annealed (biaxially textured) and as-rolled (non-textured) Ni-xW alloy tapes with compositions x = 0,1,3, and 5 at.$\%$, were studied. Characterization methods included XRD analyses to investigate the biaxial cube texturing of the annealed Ni-W alloy tapes and studies of the magnetization M for both annealed and as-rolled Ni-W alloy tapes. Both the isothermal mass magnetizations M(H) of a series of samples at different fixed temperatures and M(T) in fixed field, employing a PPMS-9 (Quantum Design), were measured. The Ni-W alloys have shown much reduced ferromagnetism as W-content x increases. Both the saturation magnetization Msat and Curie temperature Tc decrease linearly with W-content x, and both Msat and Tc go to zero at critical concentration of Xc - 9.50 at. $\%$ W.
Synthesis and Thermoelectric Properties of Ce1−z Pr z Fe4−x Co x Sb12 Skutterudites
Song, K. M.,Shin, D. K.,Jang, K. W.,Choi, S. M.,Lee, S.,Seo, W. S.,Kim, I. H. Springer Science + Business Media 2017 Journal of electronic materials Vol.46 No.5
<P>p-Type Ce1-z Pr (z) Fe4-x Co (x) Sb-12 skutterudites were prepared by encapsulated melting, quenching, annealing, and hot pressing. While the skutterudite phase was successfully synthesized, a small amount of the secondary phase (FeSb2) was observed. According to the scanning electron microscope analysis, (Ce,Pr)Sb-2 phases were also observed for Co-substituted specimens (x = 0.5). The electrical conductivity decreased with increasing temperature, implying a degenerate semiconductor behavior, and also decreased with increasing Co contents. All specimens showed p-type characteristics having positive signs of the Hall coefficient and the Seebeck coefficient. The Seebeck coefficient increased with increasing temperature and reached a maximum value at 823 K. The power factor (PF) increased with decreasing Co content and Ce0.75Pr0.25 Fe4Sb12 showed a peak value of PF = 3.2 mW m(-1) K-2 at 823 K. The electronic thermal conductivity decreased with increasing Co contents and the lattice thermal conductivity decreased with decreasing Ce and Co contents at high temperature. The thermal conductivity increased at temperatures above 623 K due to bipolar conduction. The dimensionless figurea of pound merit (ZT) showed a maximum value of ZT = 0.84 at 823 K for Ce0.25Pr0.75Fe4Sb12.</P>
1987년 한국에서 발생한 렙토스피라병의 혈청역학적 조사
이증훈,박영수,이우곤,김석용,정선식,우준희,박성광,박경희,송영욱,김선영,기정일,최두혁,강성귀,김주완,최강원,김우열,최명식,최인학,장우현,윤성열 대한감염학회 1988 감염 Vol.20 No.3
Human leptospirosis was an unfamiliar disease in Korea until 1984 that outbreak of leptospirosis occurred among farmers and soldiers after field works for harvesting rice. During that time, Lee and Jo confirmed the first Korean cases of leptospirosis by serological test, isolation of causative agent and autopy findings. Afterward several outbreaks occurred also during autumn especially after flood in every years and some characterisitcs of leptospirosis in Korea such as clinical manifestations, serotypes and seroepidemiological features has been revealed by many investigators. Because of the major mode of transmission between rodents and human is by direct contact with leptospiral urine of rodents or contaminated soil by the urine, leptospirosis in Korea has been primarily a disease of person in occupations heavily exposed to contaminated soil or infected urine such as farmer, army and etc. Therefore it seems that leptospirosis is one of the main communicable diseases to be controlled urgently in Korea, for an agricultural people account for almost half of total Korean people. For clarifying the seroepidemiological patterns of human leptospirosis in Korea by sex, month region and main reacting serovars of L. interrogans among acute febrile disease occurred in 1987, 1,773 patient's sers with acute febrile episodes were tested by microagglutination test using 19 representative strains of leptospiral serogroup as antigen. All of those sera were collected from 10 collaborative clinics located in Kyunggi, Kangwon, Chungbuk, Chungnam, Chonbuk, Chonnam province and Seoul. The results wee summerized as follows. 1) Among 1,773 sera of patients with acute febrile episodes, 219 (12.4%) were seropositive to L. interrogans, 487(27.5%) to R. tsutsugamushi, 241(13.6%) to R.typhi and 160(90.0%) to Hantaan virus. 2) Among seropositives to L.interrogans, the male outnumbered the female, 65% and 35%. 3) For age distribution, 26.9% of seropositives to L.interrogans were fifties, 19.6% were forties, 9.1% were sixties, 5.9% were thirties and 4.1% were twenties. 4) Eighty three percent of seropositives had occurred between September and October in 1987 with a peak in September. 5) Main leptospiral serovars reactive to patient's sera were Icterohaemorrhagiae(54.3%), Canicola(31.0%), CH-48(13.2%), Tarassovi(0.9%)and Cynopteri(0.5%). 6) For regional distribution, 65.8% of seropositives to L.interrogans were residents from Chonbuk, 12.3% were Chonnam, 7.3% were Chungnam, 5.5% were Kyunggi and 1.4% were Kangwon.
확산펌프 기반의 BCl<SUB>3</SUB> 축전결합 플라즈마를 이용한 GaAs와 AlGaAs의 건식 식각
이성현,박주홍,노호섭,최경훈,송한정,조관식,이제원,Lee, S.H.,Park, J.H.,Noh, H.S.,Choi, K.H.,Song, H.J.,Cho, G.S.,Lee, J.W. 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.4
본 논문은 확산펌프 기반의 축전 결합형 $BCl_3$ 플라즈마를 사용하여 GaAs와 AlGaAs를 건식 식각한 연구에 관한 것이다. 실험에서 사용한 압력 범위는 $50{\sim}180$ mTorr, CCP 파워는 $50{\sim}200\;W$, $BCl_3$ 가스 유량은 $2.5{\sim}10$ sccm 이었다. 식각 후에 GaAs와 AlGaAs의 식각 속도와 표면 거칠기분석은 표면 단차 측정기를 이용하여 하였다. GaAs의 식각 벽면과 표면 상태는 전자현미경으로 분석하였다. 식각 중 플라즈마의 광 특성 분석은 광학 발광 분석기를 이용하였다. 본 실험을 통하여 5 sccm의 소량의 $BCl_3$ 가스 유량으로 공정 압력이 130 mTorr이내인 경우에는, 100 W CCP 파워의 조건에서 GaAs는 약 $0.25{\mu}m$/min 이상의 우수한 식각 속도를 얻을 수 있었다. AlGaAs의 경우는 GaAs의 식각 속도보다 조금 낮았다. 그러나 같은 유량에서 공정압력이 180 mTorr로 높아지면 GaAs와 AlGaAs의 식각 속도가 급격히 감소하여 거의 식각되지 않는 것을 알 수 있었다. 또한 CCP 파워의 경우에는 50 W의 파워에서는 GaAs와 AlGaAs 모두 거의 식각되지 않았다. 그러나 $100{\sim}200\;W$의 조건에서는 $0.3{\mu}m$/min 이상의 높은 식각 속도를 주었다. 두 결과를 보았을 때 축전결합형 $BCl_3$ 플라즈마 식각에서 GaAs와 AlGaAs의 식각 속도는 CCP 파워가 $100{\sim}200\;W$ 범위에 있으면 그 값에 비례하지 않고 거의 일정한 값이 된다는 사실을 알았다. 75mTorr, 100 W의 CCP 파워 조건에서 $BCl_3$의 유량 변화에 따른 GaAs와 AlGaAs의 식각 속도의 경우, $BCl_3$의 유량이 2.5 sccm의 소량일 때는 GaAs는 식각 속도가 높았지만 AlGaAs는 거의 식각되지 않는 흥미로운 결과를 얻었다. 플라즈마 발광 특성을 보면 $BCl_3$ 축전 결합 플라즈마는 주로 $500{\sim}700\;mm$ 범위를 가지는 넓은 분자 피크만 만든다는 것을 알 수 있었다. 전자 현미경 사진 결과에서는 5 sccm과 10 sccm의 $BCl_3$ 플라즈마 모두 식각 중에 GaAs의 벽면을 언더컷팅 하였으며, 10 sccm의 $BCl_3$유량을 사용하였을 때 언더컷팅이 더 심했다. We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.