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Characterization of the Dopant Dependence of Ni-Silicide on a SOI Substrate for a Nano-Scale CMOSFET
Soon-Yen Jung,이희덕,이가원,Hyuk Hyun Ryu,In-Ho Kang,Jin-Suk Wang,Ji-Young Kim,Shi-Guang Li,Won-Jae Lee,김영철,Ying-Ying Zhang,Yong-Jin Kim,Zhun Zhong 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.6
In this research, the dependency of Ni-Silicide properties, such as the sheet resistance and the cross-sectional profile, on the dopants for the source/drain and the gate has been characterized. Ni-silicide on a silicon on insulator (SOI) substrate exhibits quite different characteristics compared to that on bulk silicon. There was little difference in the sheet resistance between the dopants, such as B$_{11}$ and BF$_2$, just after formation of NiSi. However, the silicide properties showed a strong dependence on the dopants when thermal treatment was applied after silicidation. The B$_{11}$-implanted substrate showed quite thermal stable characteristics while the BF$_2$-implanted one showed degradation of thermal stability. Moreover, the As-doped substrate showed an abnormal formation of an oxide layer on the NiSi. The principal reason for the excellent property of B$_{11}$-doped sample is believed to be the retardation of Ni diffusion by the boron during high-temperature annealing. Therefore, retardation of Ni diffusion and suppression of abnormal oxidation are highly necessary for high-performance Ni-silicide technology for nano-scale complementary metal oxide semiconductor field effect transistors (CMOSFETs).
Ni-Silicide 형성 후 후속공정 열처리에 의한 Abnormal Oxidation 현상을 As-doping된 Bulk와 SOI에서 비교 연구
정순연(Soon-Yen Jung),이원재(Won-Jae Lee),장잉잉(Ying-Ying Zhang),종준(Zhun Zhong),이세광(Shi-Guang Li),이가원(Ga-Won Lee),왕진석(Jin-Suk Wang),이희덕(Hi-Deok Lee) 대한전자공학회 2006 대한전자공학회 학술대회 Vol.2006 No.11
In this paper, we found an unintended oxidation on the Nickel-silicide surfaces, which arises only As doped substrate when we adopt it to the BF₂, B₁₁ and As doped substrates. The abnormal oxidation phenomena happened when As doped substrate is annealed after the NiSi formation. It is revealed that the main reason of the oxidation is the thermal energy that working between As and Si in the Silicide layer and substrate. Oxide distributes only above the silicide-island when the agglomeration happens. It is highly necessary to prevent the unwanted oxygen because it can cause fatal defects to the nano CMOSFET devices.
Study of Thermal Stability of Ni Silicide using Ni-V Alloy
Zhun Zhong,Soon-Young Oh,Won-Jae Lee,Ying-Ying Zhang,Soon-Yen Jung,Shi-Guang Li,Ga-Won Lee,왕진석,이희덕,Yeong-Cheol Kim 한국전기전자재료학회 2008 Transactions on Electrical and Electronic Material Vol.9 No.2
In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to NiSi₂ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to 650 ˚C and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.
Study of Thermal Stability of Ni Silicide using Ni-V Alloy
Zhong, Zhun,Oh, Soon-Young,Lee, Won-Jae,Zhang, Ying-Ying,Jung, Soon-Yen,Li, Shi-Guang,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok,Kim, Yeong-Cheol The Korean Institute of Electrical and Electronic 2008 Transactions on Electrical and Electronic Material Vol.9 No.2
In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to $NiSi_2$ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to $650^{\circ}C$ and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.
원발성 무월경과 재발성 자궁내막증을 초래한, 자궁경부와 분리되어 맹관을 형성한 자궁체부의 자궁성형술
안세영 ( Se Young Ahn ),김현정 ( Hyun Jung Kim ),신현미 ( Hyun Mi Shin ),박호정 ( Ho Jeong Pak ),송재연 ( Jae Yen Song ),오순남 ( Soon Nam Oh ),정재은 ( Jae Eun Chung ),임용택 ( Young Taik Lim ),김장흡 ( Jang Heub Kim ),김진홍 ( J 대한산부인과학회 2008 Obstetrics & Gynecology Science Vol.51 No.9
Congenital anomalies of the female reproductive tract may involve the uterus, cervix, fallopian tubes, or vagian. Depending on the specific defect, a women`s obstetric and gynecologic health may be adversely affected. We have experienced a case of rudimentary uterine horn with noncommunicated uterus complicated by pelvic endometriosis in a 25 years old woman with primary amenorrhea and monthly periodic pelvic pain. We observed noncommunicating uterus with blind pouch, cervix disconnected to uterus with normal appearance, and left ovarian endometrial cyst. For treatment, the metroplastic surgery with end-to end anastomosis connecting cervix and noncommunicated uterus and removal of endometrial cyst were done. Many cases of uterine anomalies have been documented but, there have been few reported cases of noncommunicated uterus with disconnected cervix and successful performance of the metroplasty. Thus hereby we report this case with a review of literatures.
Stress Dependence of Thermal Stability of Nickel Silicide for Nano MOSFETs
Zhang, Ying-Ying,Lee, Won-Jae,Zhong, Zhun,Li, Shi-Guang,Jung, Soon-Yen,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok,Lim, Sung-Kyu The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.3
Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride $(Si_3N_4)$ layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at $500^{\circ}C$ for 30 sec. $2000{\AA}$ thick $Si_3N_4$ layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the $Si_3N_4$ layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.
나노급 CMOSFET을 위한 SOI기판에 도핑된 B1l을 이용한 니켈-실리사이드의 열안정성 개선
정순연,오순영,이원재,장잉잉,종준,이세광,김영철,이가원,왕진석,이희덕,Jung, Soon-Yen,Oh, Soon-Young,Lee, Won-Jae,Zhang, Ying-Ying,Zhong, Zhun,Li, Shi-Guang,Kim, Yeong-Cheol,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.11
In this paper, thermal stability of Ni-silicide formed on the SOI substrate with $B_{11}$ has been characterized. The sheet resistance of Ni-silicide on un-doped SOI and $B_{11}$ implanted bulk substrate was increased after the post-silicidation annealing at $700^{\circ}C$ for 30 min. However, in case of $B_{11}$ implanted SOI substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min. The main reason of the excellent property of $B_{11}$ sample is believed to be the retardation of Ni diffusion by the boron and bottom oxide layer of SOI. Therefore, retardation of Ni diffusion is highly desirable lot high performance Ni silicide technology.