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Shan Shan Gao,Jia-Lin Li,Hui Min Qiao 대한전기학회 2019 Journal of Electrical Engineering & Technology Vol.14 No.5
A planar slot antenna operating at 2.75–9.75 GHz is studied for ultra-wideband (UWB) applications, where three controllable notched bands centered at 4, 5.9 and 8.45 GHz are further introduced to avoid some potential interferences. The elliptical slots and coplanar waveguide feeding lines are incorporated to achieve desired UWB operation. By introducing a V-shaped and two U-shaped slots on the CPW signal line, three notched bands are implemented, and each notch band can be adjusted independently. Measurements on the developed demonstrator match with the numerical simulations.
How to Establish Acute Myeloid Leukemia Xenograft Models Using Immunodeficient Mice
Shan, Wu-Lin,Ma, Xiao-Ling Asian Pacific Journal of Cancer Prevention 2013 Asian Pacific journal of cancer prevention Vol.14 No.12
The discovery of the immunodeficient mice has provided a tool for establishing animal models as hosts for in vivo analysis of AML. Various model systems have been established in the last few decades, and it is essential that murine AML models are developed to exploit more specific, targeted therapeutics. In this review, we concentrate on the models of AML and discuss the development of immunodeficiency models for understanding of leukemogenesis, describe those now available and their values and document the methods used for establishing and identifying AML mice models, as well as factors influencing engraftment of human AML in immunodeficient mice. Thus, the function of this article is to provide clinicians and experimentalists with a chronological, comprehensive appraisal of all AML model systems.
Electrocatalytic properties of Fe-based bulk metallic glasses for hydrogen evolution reaction
Shan Lin Wang,이승훈,김동현 한국화학공학회 2011 Korean Journal of Chemical Engineering Vol.28 No.8
The electrocatalytic activity of newly developed Fe-based bulk metallic glasses was evaluated by polarization and impedance measurements in deaerated 1M KOH solution at room temperature. The electrocatalytic activity as well as the glass-forming ability of the Fe_(73)C_3Si_(7.3)B_(8.5)P_(5.7)Mo_(2.5) alloy was improved by the partial substitution of Fe with 13.5 at% Co. In hydrogen evolution reaction, the metallic glasses exhibited higher activity than the activity of G14 (Fe_(60)B_(10)Si_(10)Co_(20)) metallic glass, which has been reported to be comparable to the activity of Pt electrode. The activity was further improved after a chemical pretreatment in 1 M HF solution for 1 min due to the formation of cobalt-rich layer with a large effective surface area.
New neo-lignan from Acanthopanax senticosus with protein tyrosine phosphatase 1B inhibitory activity
Jia Lin Li,Na Li,Shan-Shan Xing,Nan Zhang,BanBan Li,JianGuang Chen,안종석,Long Cui 대한약학회 2017 Archives of Pharmacal Research Vol.40 No.11
New neo-lignan, (7S, 8R)-3-hydroxyl-4-methoxyl-balanophonin (1), together with seven known compounds(2–8)were isolated fromthe EtOAc-soluble extract ofAcanthopanax senticosus. The structure of the newneo-lignanwas elucidated with spectroscopic and physico-chemicalanalyses. All the isolates were evaluated for in vitro inhibitoryactivity against PTP1B, VHR and PP1. Among them, the newcompound (1) was found to exhibit selective inhibitoryactivity on PTP1B with IC50 value 15.2 ± 1.4 lM.
A 3-Gb/s Equalizer with an Adaptive Swing Controller for TFT-LCD Interfaces
Miao-Shan Li,Yen-Chen Lin,Chai-Chi Liu,Ching-Rong Chang,Jyun-Yi Li,You-Sheng Lin,Ching-Yuan Yang 대한전자공학회 2019 Journal of semiconductor technology and science Vol.19 No.1
A 0.18-μm CMOS 3-Gb/s equalizer with an adaptive swing controller is presented for 4K2K large display panels to compensate a 24-dB channel loss. Employing the output-swing control technique, we propose the adaptive loop for the equalizer to improve adaptation accuracy without degrading the boost tuning and input swing ranges. Besides, cascading two bandpass filters (BPF) measured energy in a narrow range is much more accuracy than conventional highpass filters (HPF). The measured jitter of 3-Gb/s and 1.5-Gb/s data are 0.23-UI and 0.356-UI for 1.23-m FR4 board, respectively. The core area occupies 0.12-㎟ and the power consumption is 27-mW at 3 Gb/s from a 1.8-V supply.
Xiao-Lin Wang,Shan Fei,Zhao Han-Lin,Lee Jae-Yun,Yoo Suchang,Ryu Heung Gyoon,Choi Seungkeun,Anvar Tukhtaev,Kim Sung-Jin 대한금속·재료학회 2022 ELECTRONIC MATERIALS LETTERS Vol.18 No.5
A high-performance indium oxide (In 2 O 3 )-based thin-film transistor (TFT) was prepared with aluminum oxide/fluorinated self-assembled monolayer (Al 2 O 3 /F-SAM) double-gate dielectric layer. The Al 2 O 3 /F-SAM double gate dielectric layer improved the performance of the In 2 O 3 -based TFT by reducing the device leakage current. In addition, devices with a double-gate dielectric layer show improved stability under negative bias stress testing compared to devices with a single gate dielectric layer (Al 2 O 3 ), shifting a threshold voltage by only 0.4 V. These results suggest that the Al 2 O 3 /F-SAM doublelayer gate dielectric layer can enhance the performance of In 2 O 3 -based TFTs. Furthermore, it can be used to improve the performance of other metal oxide-based devices by minimizing the leakage current at low operating voltages at low cost.