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김재민 ( Jae Min Kim ),송윤섭 ( Yun Seob Song ),이상렬 ( Sang Yeoul Yi ),김수원 ( Soo Won Kim ) 한국센서학회 2004 센서학회지 Vol.13 No.2
Today. the obstacle detection system has massive size and restrictive detection range. To solve these problems, this paper proposes the capacitance variation detector using the variated capacitance value as a result of the obstacle approaching. If obstacle approaches, the capacitance value of capacitance sensor is increased and the operating frequency of oscillator is decreased. Then this changed frequency appears to the output of the mixer that operate down conversion. The capacitance variation detector is produced by Hynix0.35 μ CMOS process. In experiment result, the frequency of final output is 6.81 MHz at no obstacle and 31.45 MHz at approaching obstacle. In conclusion, proposed capacitance variation detector has small size, low power consumption and easiness to set up anywhere. So it is expected to substitute the obstacle detector.
장지근,황용운,조재욱,이상열,Chang, Gee-Keun,Hwang, Yong-Woon,Cho, Jae-Uk,Yi, Sang-Yeoul 한국재료학회 2003 한국재료학회지 Vol.13 No.6
The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{+}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.
바이폴라 집적소자용 Si Photodioded의 설계 및 시물레이션
장지근,이상열,김윤희 단국대학교 신소재기술연구소 2001 신소재 Vol.10 No.-
Optical Link용 receiver module을 one chip IC로 실현하기 위해 바이폴라 집적소자용 si photodiode를 설계하고 simulation기법(tool: SILVACO/ATLAS)을 이용하여 이의 전기·광학적 특성을 분석하였다. 제안된 그물망(web) 모양의 소자는 바이폴라 IC기술로 제작이 가능하며, simulation 결과 에피층의 두께가 12㎛, 도핑정도가 1.1×10^15/㎤인 Si 웨이퍼를 사용할 경우 우수한 디지털 광신호 분리능력{I(1-state_/I(0-state)>10^2}과 약 700nm의 파장 범위에서 peak spectral response를 나타내었다. A Si photodiode was designed and its electro-optical characteristics were analyzed by simulation(tool: SILVACO/ATLAS) to realize one chip received module for optical link. the proposed device can be fabricated by bipolar IC technology. The simulation results show that the web type device has the good discrimination characteristic{1(1-state)/I(0-state)>10^2} between digital optical signals and peak spectral response in the wavelength of about 700 nm when it is fabricated from Si water with epitaxial thickness of 12um and the doping concentration of 1.1×10^15/㎤.