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Sahu, S.K.,Rath, M.K.,Datta, P.K.,Sahoo, R. The Korean Society for Aeronautical and Space Scie 2012 International Journal of Aeronautical and Space Sc Vol.13 No.3
The present study deals with the parametric resonance behaviour of laminated composite curved shell panels in a hygrothermal environment using Bolotin's approach. A simple laminated model is developed using first order shear deformation theory (FSDT) for the vibration and dynamic stability analysis of laminated composite shells subjected to hygrothermal conditions. A computer program based on the finite element method (FEM) in a MATLAB environment is developed to perform all necessary computations. Quantitative results are presented to show the effects of curvature, ply-orientations, degree of orthotropy and geometry of laminates on the parametric instability of composite curved shell panels for different temperature and moisture concentrations. The excitation frequencies of laminated composite panels decrease with the increase of temperature and moisture due to reduction of stiffness for all laminates.
Some Device Design Considerations to Enhance the Performance of DG-MOSFETs
S K Mohapatra,K P Pradhan,P K Sahu 한국전기전자재료학회 2013 Transactions on Electrical and Electronic Material Vol.14 No.6
When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC))and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically,leakage current (Ioff), on current (Ion), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.
A Study of SCEs and Analog FOMs in GS-DG-MOSFET with Lateral Asymmetric Channel Doping
Sahu, P.K.,Mohapatra, S.K.,Pradhan, K.P. The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.6
The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.
S.K Sahu,M.K.Rath,P.K Datta,R. Sahoo 한국항공우주학회 2012 International Journal of Aeronautical and Space Sc Vol.13 No.3
The present study deals with the parametric resonance behaviour of laminated composite curved shell panels in a hygrothermal environment using Bolotin’s approach. A simple laminated model is developed using first order shear deformation theory (FSDT) for the vibration and dynamic stability analysis of laminated composite shells subjected to hygrothermal conditions. A computer program based on the finite element method (FEM) in a MATLAB environment is developed to perform all necessary computations. Quantitative results are presented to show the effects of curvature, ply-orientations, degree of orthotropy and geometry of laminates on the parametric instability of composite curved shell panels for different temperature and moisture concentrations. The excitation frequencies of laminated composite panels decrease with the increase of temperature and moisture due to reduction of stiffness for all laminates.
Quality control of Dalchini (Cinnamomum zeylanicum): a review
Arun K. S. Parihar,K. Kulshrestha Mayank,Umakant Sahu,K. S. Karbhal,S. R. Inchulkar,Kamal Shah,N. S. Chauhan 경희대학교 융합한의과학연구소 2023 Oriental Pharmacy and Experimental Medicine Vol.23 No.1
Dalchini bark (Cinnamomum zeylanicum) being a vast treasure of phytoconstitutents have a tremendous ethnomedicinal value. Dalchini (Cinnamomum zeylanicum) being a delicious spice with an impressive effects on health and metabolism. Cinnamon barks are available in the market in lot of varieties. So it’s difficult to identify and select dalchini adulterant by numerous substituent and exhausted drugs which are of fewer efficacies and have an harmful effects for human beings. Dalchini are adulterate with Cinnamon cassia, Cinnaniomon burmanii, Cinnaniomon loureirii with other spices and amurud (Psidium guajava, common guava, lemon guava) etc. The present chapter is an attempt to cater various techniques for the identified of the adulterants and substitutes to shot out deterioration of herb potential.
A Study of SCEs and Analog FOMs in GS-DGMOSFET with Lateral Asymmetric Channel Doping
P. K Sahu,S. K. Mohapatra,K. P. Pradhan 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.6
The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.
Thomas, S.,Bates, A.,Park, S.,Sahu, A.K.,Lee, S.C.,Son, B.R.,Kim, J.G.,Lee, D.H. Applied Science Publishers 2016 APPLIED ENERGY Vol.165 No.-
<P>A minimum balance of plant (BOP) is desired for an open-cathode high temperature polymer electrolyte membrane (HTPEM) fuel cell to ensure low parasitic losses and a compact design. The advantage of an open-cathode system is the elimination of the coolant plate and incorporation of a blower for oxidant and coolant supply, which reduces the overall size of the stack, power losses, and results in a lower system volume. In the present study, we present unique designs for an open-cathode system which offers uniform temperature distribution with a minimum temperature gradient and a uniform flow distribution through each cell. Design studies were carried out to increase power density. An experimental and simulation approach was carried out to design the novel open-cathode system. Two unique parallel serpentine flow designs were developed to yield a low pressure drop and uniform flow distribution, one without pins and another with pins. A five-cell stack was fabricated in the lab based on the new design. Performance and flow distribution studies revealed better performance, uniform flow distribution, and a reduced temperature gradient across the stack; improving overall system efficiency. (C) 2015 Elsevier Ltd. All rights reserved.</P>
Some Device Design Considerations to Enhance the Performance of DG-MOSFETs
Mohapatra, S.K.,Pradhan, K.P.,Sahu, P.K. The Korean Institute of Electrical and Electronic 2013 Transactions on Electrical and Electronic Material Vol.14 No.6
When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.