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민영철,노덕규,김상준,MINH Y. C.,ROH D.-G.,KIM S. J.,OHISHI M. 한국천문학회 2001 天文學論叢 Vol.16 No.1
We observed the thermal transitions of SiO (J=I-0, 2-1) and $^{29}SiO$ (J=l-O) toward the Sgr A molecular clouds. The distribution and the velocity structure of SiO are very similar to previous results for 'quiet' interstellar molecules. We think· that the SiO has been well mixed with other molecules such as $H_2$ which may indicate that the formation of Sgr A molecular clouds was affected by the activities, such as shock waves or energetic photons, from the Galactic center in large scales. The total column density of SiO is about $4.1\times10^{14} cm^{-2}$ and the fractional abundance $SiO/H_2$ appears to be about 10 times larger than those of other clouds in the central region of our galaxy. The derived values are thought to be lower limits since the optical depths of the observed SiO lines are not very thin. The formation of SiO has been known to be critically related to shocks, and our results provide informative data on the environment of our Galactic center.
분광타원해석법을 이용한 Ge₂Sb₂Te5의 복소굴절율 결정
김상준(S.J. Kim),김상열(S.Y. Kim),서훈(H. Seo),박정우(J.W. Park),정태희(T.H. Chung) 한국광학회 1997 한국광학회지 Vol.8 No.6
비정질상과 결정상으로 가역변화하는 특성을 이용하여, 기존의 읽기전용 기록매체인 Compact Disk (CD)를 대체할 차세대 광기록매체로 주목받고 있는 Ge₂Sb₂Te_5 (GST)의 상태변화에 따른 굴절율과 소광계수, 박막의 두께와 밀도등 박막상수들을 구하였다. DC 스퍼터링방법으로 제작한 두꺼운 GST의 복소굴절율을 양자역학적 분산식을 이용한 모델링방법으로 구하고, 한편으로는 표면미시거칠기를 AFM (Atomic Force Microscopy)으로 결정한 다음, 타원해석 스펙트럼들을 수치해석적 역방계산하여 구한 복소굴절율과 비교하였다. 결정상과 비정질상일 때의 GST의 복소굴절율을 각각 구하고 이로부터 계산된 반사율을 측정된 반사율과 비교함으로써 수치해석적인 방법이 실제 GST의 복소굴절율과 더 일치하는 값을 가지게 됨을 확인하였다. 이렇게 구한 GST의 복소굴절율을 기준데이터로 사용하여 실제 설계두께를 가지는 GST박막의 두께 및 표면거칠기층을 정량적으로 구하였다. The complex refractive indices of Ge₂Se₂Te_5 which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The Ge₂Se₂Te_5 films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase Ge₂Se₂Te_5 and an amorphous phase Ge₂Se₂Te_5, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of Ge₂Se₂Te_5 at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin Ge₂Se₂Te_5 film which has the optimum thickness of 26 ㎚ as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.