쌍각자궁에서 4회 반복유산 후 만삭 둔위 분만 1예

홍정의,김윤숙,최승도,선우재근,배동한 순천향의학연구소 2008 Journal of Soonchunhyang Medical Science Vol.14 No.2S

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출아효모에서 TAR 클론닝법을 이용한 고등동물의 게놈으로부터 특정 염색체 부위의 분리

박정은,윤영호,이윤주,김광섭,윤세련,안태진,임선희,선우양일 동아대학교 기초과학연구소 2003 基礎科學硏究論文集 Vol.20 No.1

복잡한 게놈 분석에 용이하도록 효모의 인공 염색체(YAC) 클론닝 시스템은 발달되어왔다. YAC은 박테리아의 인공 염색체(BAC)보다 더 큰 단편을 클론닝할 수 있고, 또한 클론된 단편을 쉽게 변형시킬 수 있다. 형질전환과 연계된 재조합법(Transformation-Associated Recombination; TAR)은 게놈 라이브러리를 만들지 않고 직접 게놈 DNA로부터 분리하고자 하는 유전자나 특정 염색체 부분을 클론닝 할 수 있는 방법이다. 이 방법은 spheroplast transformation을 수행하는 동안, 목적으로 하는 유전자의 5' 그리고 3' 염기 배열(hooks)을 지닌 TAR 벡터와 게놈 DNA 사이에서 일어나는 상동성 재조합에 의해 이루어진다. 효모 내의 in vivo 재조합을 이용한 TAR 클론닝법은 복잡한 게놈으로부터 목적의 염색체 부분을 원형 YAC의 형태로서 선택적으로 분리할 수 있다. 그러므로 TAR 클론닝 법은 특정 염색체로부터 YACs을 만드는데 매우 유용하여, 전체 게놈으로부터 특이적 유전자나 유전자의 family를 분리하는데 효과적인 방법으로 사료된다. Yeast artificial chromosome (YAC) cloning systems have advanced the analysis of complex genomes considerably. They permit the cloning of larger fragments than do bacterial artificial chromosome systems, and the cloned material is more easily modified. Transformation-associated recombination (TAR) is a cloning technique that allows specific chromosomal regions or genes to be isolated directly from genomic DNA without prior construction of a genomic library. This technique involves homologous recombination during spheroplast transformation between genomic DNA and a TAR vector that has 5' and 3' gene targeting sequences (hooks). Using in vivo recombination in yeast, TAR cloning selectively isolates, as circular YACs, desired chromosome segments or entire genes from complex genomes. We propose that TAR cloning can provide an efficient means for generating YACs from specific chromosomes and that TAR cloning may be useful for isolating families of genes and specific genes from total genome DNA.

S. cerevisiae에서 세포주기의 진행에 관련된 COS28과 COS46 유전자의 클로닝

박정은,임선희,선우양일 동아대학교 기초과학연구소 2000 基礎科學硏究論文集 Vol.17 No.1

본 연구에서는 효모의 돌연변이주를 분리하여 G1/S기에서 세포주기 진행에 관련된 유전자의기작을 이해하기 위해 연구를 수행하였다. 먼저, cos28과 cos46 돌연변이주의 MMS(methylmethane sulfonate)와 HU(hydroxyurea)에 대한 감수성을 조사하였다. 이들 돌연변이주들은 MMS와 HU에 대해서 감수성을 보이므로, S기 checkpoint에 관련되었다고 생각된다. 다음으로 cos28과 cos46 돌연변이를 상보하는 유전자를 클로닝하였고, 서열화하였다. 그리고 클론된 유전자는 데이터 베이스 분석을 통해 조사하였다. cos28 변이주를 상보하는 DNA 단편은 전체 6개의 ORF를 가지며 그 중 기능이 알려진 ORF로는 RPS21B와 LCB3와 MRS3가 있고, 기능이 알려지지 않은 ORF로는 YJL131와 YJL132와 YJL135의 세개를 포함하고 있었다. cos46 유전자는 전체 6개의 ORF를 가지며, 그 중 기능이 알려진 CYP5와 HNT2와 SRB7와 GIC2를 가지고, 기능이 알려지지 않은 ORF로 YDR306, YDR307를 포함하고 있음이 확인되었다. In this study, to understand the mechanisms of genes which related in cell cycle progression at G1/S phase, using the isolated mutants in S. cerevisiae were investigated. First of all, cos28 and cos46 were examined the sensitive to MMS(methylmethane sulfonate) and HU(hydroxyurea). These mutants were showed MMS, HU sensitivities and might be a act at a checkpoint pathway during S phase. These mutants were carried out gene cloning for the gene which were complemented the cos mutants. As a result, the DNA fragments which complement with the cos28 and cos46 mutants, were cloned and sequenced. And then cloned genes were surveyed though data base analysis. Complemented DNA fragment of COS28 contained six ORF which were consisted RPS21B, LCB3, MRS3, YJL131, YJL132, and YJL135. Complemented DNA fragment of COS46 contained six ORF which were consisted CYP5, HNT2, SRB7, GIC2, YDR306 and YDR307.

자궁경부 상피종양에서 human papillomavirus 감염과 survivin 발현

윤재호,정동준,이정은,박동명,배동한,선우재근,백무준,김창진 순천향의학연구소 2004 Journal of Soonchunhyang Medical Science Vol.10 No.1

Human papillomavirus (HPV) has been considered a causative agent of uterine cervical carcinoma. HPV is a DNA oncogenic virus, which is well known as a causative virus in uterine cervical carcinoma. The virus is classified into two groups genotypically, low risk and high risk, according to the carcinogenic potentiality, and the determination of the viral genotype is important in clinical practice. Recently, numerous genotypes can be determined by high throughput method using DNA chip. Survivin is a recently characterized inhibitor of anti-apoptosis (IAP) protein, which is abundantly expressed in most solid and hematological malignancies, but undetectable in normal adult tissues. In this study, HPV genotypes are determined by DNA chip and the expression of survivin was examined by immunohistochemistry in 80 cases of uterine cervical intraepithelial neoplasia (CIN) and invasive carcinoma to see the roles of HPV and survivin in the carciogenesis of uterine cervical epithelial neoplasia. The results were as follows: 1. HPV positive rate was 72.5%, while negative rate was 27.5% in 80 cases of CIN and invasive carcinoma. The CIN and invasive carcinoma showed higher HPV positive rate (p <0.05). 2. HPV positive rate according to the histologic grade were 60%, 65%, 77% and 90% in CINI, CINII, CINII and invasive carcinoma, respectively. HPV positive rate showed increasing tendency according to the histologic grade, though there was no statistical significance. 3. The most frequent genotype was type 16 and the next were 58, 52, 18 and 33 in order of frequency. 4. Survivin was expressed in 96.3% of CIN and invasive carcinoma. The expression rate of survivin showed no significant difference between the histologic grade of CIN and invasive carcinoma, but showed tendency of increased expression rate in invasive carcinoma. 5. Survivin was expressed in HPV positive and in HPV negative each as in 95.5% and 96.6% respectively. There was no significant difference of survivin expression between HPV positive and negative cases. The above results suggest that HPV has no effect on the regulation of survivin expresson level in the uterine cervical intraepithelial neoplasia and invasive carcinomas.

GaN Based Carbon Dioxide Sensor

Jung, Sunwoo,Baik, Kwang Hyeon,Jang, Soohwan Electrochemical Society 2017 ECS Transactions Vol.77 No.6

<P>AlGaN/GaN high electron mobility transistor based carbon dioxide sensor with ZnO nanorods as a sensing material was fabricated. The response of the device to carbon dioxide gas was characterized at elevated measurement temperature. The transistor showed an increase in drain current upon 500 ppm CO<SUB>2</SUB> due to the enhanced electron channel at the interface of AlGaN and GaN from 150°C. Reliable repeatability to cyclic exposures of various concentrations of carbon dioxide gas was observed. Also, effect of humidity on sensing behavior was investigated.</P>

Detection of ammonia at low concentrations (0.1-2 ppm) with ZnO nanorod-functionalized AlGaN/GaN high electron mobility transistors

Jung, Sunwoo,Baik, Kwang Hyeon,Ren, Fan,Pearton, Stephen J.,Jang, Soohwan American Institute of Physics 2017 Journal of Vacuum Science & Technology. B Vol.35 No.4

GaN Based Hydrogen Sensor in Humid Ambient

Jung, Sunwoo,Baik, Kwang Hyeon,Jang, Soohwan Electrochemical Society 2017 ECS Transactions Vol.77 No.6

<P> AlGaN/GaN HEMT based hydrogen sensor incorporating poly(methyl methacrylate) (PMMA) membrane was fabricated. The maximum sensitivities of 2.6×10<SUP>5</SUP>% were obtained for both dry and humid 500 ppm hydrogen. The PMMA layer effectively permits the approach of hydrogen molecules to catalytic platinum surface, while blocking the penetration of water molecules. The PMMA encapsulated device also showed reliable hydrogen gas sensing characteristics even after 25- 100°C heating cycle stress. </P>

Silver-Functionalized AlGaN/GaN Heterostructure Diode for Ethanol Sensing

Jung, Sunwoo,Baik, Kwang Hyeon,Ren, Fan,Pearton, S. J.,Jang, Soohwan Electrochemical Society 2017 Journal of the Electrochemical Society Vol.164 No.9

<P>The use of Ag in the gate region of AlGaN/GaN heterostructure diodes is shown to provide stable, reversible changes in barrier height and thus current during exposure to ethanol at 250 degrees C. The exposed ethanol molecules are adsorbed on the silver and oxidized, resulting in the increase of Schottky barrier height. The detection limit of ethanol at this temperature was 58 ppm, and the sensor response was linear over the range 58-58700 ppm. For the high end of this concentration range (5.87%), ethanol exposure at 250 degrees C caused the Schottky barrier height to change from 0.604 eV to 0.656 eV, which produced a forward current relative change of 45.4% at 0.9V forward bias. The results are competitive with detection of ethanol by oxide thin films or nanostructures of SnO2, Fe2O3, CuO, and ZnO. (C)The Author(s) 2017. Published by ECS.</P>

Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing

Jung, Sunwoo,Baik, Kwang Hyeon,Ren, Fan,Pearton, Stephen J.,Jang, Soohwan IEEE 2017 IEEE SENSORS JOURNAL Vol.17 No.18

<P>Polydimethylglutarimide (PMGI), a photosensitive positive type resin used in photoresists, is shown to be an effective moisture barrier for mitigating the effect of humidity on the sensitivity of Pt-AlGaN/GaN Schottky diodes for hydrogen detection. The maximum relative current change observed in PMGI-encapsulated diodes forward biased at 1.3 V and exposed to 500 ppm of dry or humid H-2 is identical within experimental error over the temperature range 25 degrees C-300 degrees C and peaks at 200 degrees C in both cases (4.4 x 10(6)% increase compared with the current under N-2 ambient). Unencapsulated diodes exhibit a decrease of approximately one ninth of the current signal for detection of 500 ppm of H-2 in the presence of water. The PMGI is easily spun-on to the sensors, and does not degrade until temperatures of 335 degrees C or higher, making it a suitable moisture barrier for most hydrogen sensing applications.</P>

Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer

Sunwoo Jung,Kwang Hyeon Baik,Fan Ren,Pearton, Stephen J.,Soohwan Jang IEEE 2017 IEEE electron device letters Vol.38 No.5

<P>One of the biggest issues with GaN-based hydrogen sensors is their sensitivity to humidity in the ambient. We demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly(methyl methacrylate) (PMMA) provides effective mitigation of the effects of water. Without PMMA encapsulation, the absolute current signal for detection of 500 ppm of H<SUB>2</SUB> was decreased by a factor of 8 in the presence of water. By sharp contrast, encapsulated diodes show no decrease in response in the presence of water. The relative current changes are of the order 2.8 × 10<SUP>5</SUP>% when 500 ppm H<SUB>2</SUB> is introduced to the surface of bare or PMMA encapsulated diodes in the absence of water or to encapsulated diode in the presence of water. Detection limits of ~100 ppm H<SUB>2</SUB> (0.01% by volume) were obtained with standard forward bias detection mode at 1.3 V.</P>