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서울의 Penicillinase Producing Neisseria gonorrhoeae 발생빈도(1997)
김재홍,문득곤,김정수,김용준,임동진,박상훈,김희성,이민수,송기훈,김갑형,김형석,성소영,이인섭,김석우,황지환,조창근,김경문,부태성 대한화학요법학회 2000 대한화학요법학회지 Vol.18 No.3
Background : In recent years, gonorrhea has been pandemic and remains one of the most common STDs in the world, especially in developing countries. Objective & Methods : For the detection of a more effective therapeutic regimen and assessing the prevalence of PPNG, we have been trying to study the patients who have visited the Venereal Disease Clinic of Choong-Ku Public Health Center in Seoul since 1980 by means of the chromogenic cephalosporin method. Results : In 1997. 99 strains of N. gonorrhoeae were isolated, among which 45(45.5%) were PPNG. Conclusion : The prevalence of PPNG in Seoul, which had been decreased to 39% in 1996 after a peak of 74.3% in 1993, is increased to 45.5% in 1997.
열공형과 비열공형 피질하 혈관성 치매에서 위험인자의 차이에 관한 비교 연구
배희준,정지향,유경호,나덕렬,김상윤,최경규,양동원,손의주,이상도,김재우,박경원,김응규,이재홍,박미영,한일우,함동석,최문성,하충건,최성혜,이애영,이병철,한설희 대한치매학회 2003 Dementia and Neurocognitive Disorders Vol.2 No.2
Backgrounds and Objectives: Vascular dementia is a group of dementing disoders arising from various stroke syndrome. Among these. subcortical ischemic vascular dementia (SIVD) is regarded as a relatively distinct clinical entity. However, MRI patterns of SIVD are not homogenous. In some patients, lacunes are dominant, and in others, subcortical white matter changes are. This study was designed to compare risk factor profiles between SIVD with and without multiple lacunes. Methods: We divided 47 subjects (22 males, mean age. 68 years) recruited from VADAPET (Multicenter Trial For Evaluation Of The Changes In the PET Images Of Subcortical Vascular Dementia Patient) study into two groups one with more than 5 lacunes in deep gray matter (lacune group) and the other with 5 or less(non-lacune group) Clinical characteristics and laboratory findings of two groups were compared. Results: Nineteen of 47 patients (40%) belonged to the lacune group. The lacune and non-lacune groups d d not differ in the following variables: age, hypertension, diabetes mellitus, hyperlipidemia heart disease, history of stroke or TIA, history of trauma or major surgery, family history of hypertension stroke, or dementia, age at diagnosis of dementia, body mass index, white blood cell count, ESR, CRP, fibrinogen, hemoglobin A1C, total cholesterol. LDL cholesterol creatinine, proteinuria, glucosuria, and microhematuria. However, male sex, smoking alcohol. hemoglobin, and HDL cholesterol were possibly associated more with lacune group SIVD than with non-lacune group (p<0 1) Multivariate analyses revealed that smoking, hemoglobin, and HDL cholesterol were independent predictors of SIVD with multiple lacunes Conclusion: Our study suggests that SIVD with multiple lacunes may be significantly different in smoking habits hemoglobin, and HDL cholesterol from SIVD without multiple lacunes.
RELIABILITY CONSIDERATIONS OF TI/PT/AU SCHOTTKY CONTACT ON GAAS MESFETS
Mun,Jae Kyoung,Lee,Jong Lam,Kim,Hae Cheon,Pyun,Kwang Eui,Park,Hyung Moo 대한전자공학회 1995 ICVC : International Conference on VLSI and CAD Vol.4 No.1
The reliability of the Au/Pt/Ti/GaAs Schottky gate GaAs MESFETs was investigated by accelerated life tests and their thermal degradation mechanisms were characterized using I-V and C-V measurements. The activation energies of 1.3eV and 2.7eV were evaluated from accelerated life test results for both Schottky and ohmic contacts, and their projected MTTF were evaluated to be 2E8 and 4E15 hours at 125℃, respectively. This indicates that degradation of the GaAs MESFETs was mainly depends on thermal stability of the Schottky contact. C-V measurements show that both net electron concentration and effective channel thickness reduce with annealing temperature. Activation energies for both cases are evaluated to be 1.4eV and 1.74eV, respectively. This suggests that the degradation of Schottky contact was mainly proceeded by the decrease of net electron concentration during the annealing.
WNx Self - Align Gate GaAs LDD MESFET의 제작 및 특성
문재경(Jae Kyoung Mun),김해천(Haecheon Kim),곽명현(Myeong-Hyeon Kwak),강성원(Sung-Won Kang),임종원(Jong-Won Lim),이재진(Jae Jin Lee) 한국진공학회(ASCT) 1999 Applied Science and Convergence Technology Vol.8 No.4(2)
본 연구에서는 SiO₂ side-wall 공정을 이용하여 내열금속 WN_x 자기정렬형 게이트 갈륨비 소 MESFET을 개발하였다. MESFET은 평면 대칭형 자기정렬 구조를 가지며, 이온주입법을 이용하여 집적화가 가능하게 하였다. 게이트전압 +0.6V에서 전달컨덕턴스는 354 mS/㎜, 포화전류는 171 ㎃/㎜를 나타내었다. RF 측정 결과 기생성분의 de-embedding없이 차단주파수는 43 ㎓이상으로 평가되었다. WN_x 자가정렬형 게이트 갈륨비소 MESFET 기술은 휴대전화기, 개인이동통신, 무선통신망과 같은 디지털 이동통신 시스템용 선형 전력 증폭기 집적회로나 다기능 모노리씩 집적회로를 구현하는데 활용될 것으로 기대된다. We have developed a refractory WN_x self-aligned gate GaAs metal-semiconductor field-effect transistor (MESFET) using SiO₂ side-wall process. The MESFET has a fully ion-implanted, planar, symmetric selfalignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354 mS/㎜ up to Vgs=+0.6V and the saturation current of 171 ㎃/㎜ were obtained. As high as 43 ㎓ of cut-off frequency has been realized without any de-embedding of parasitic effects. The refractory WN_x self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems, such as hand-held phone (HHP), personal communication system (PCS) and wireless local loop(WLL).
문재경(Jae-Kyoung Mun),배성범(S.B. Bae),이형석(H.S. Lee),김진식(Z.S. Kim),이현수(H.S. Lee),장현규(H.G. Jang) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.11
Global R&D trend of high efficiency and low loss GaN power semiconductor technologies will be presented in the conference. This is why to mention the importance of R&D in our country and hope to be next generation big player in the IT-consumer, EV/HEV, PV, ESS, FC, renewable energy markets. Finally, we will talk about several R&D results of GaN power devices and power conversion modules developed in ETRI for last several years.
문재경 ( Jae Kyoung Mun ),김동영 ( Dong Young Kim ),임종원 ( Jong Won Lim ),안호균 ( Ho Kyun Ahn ),김해천 ( Hae Cheon Kim ),유현규 ( Hyun Kyu Yu ) 대한금속재료학회 ( 구 대한금속학회 ) 2007 ELECTRONIC MATERIALS LETTERS Vol.3 No.4
This paper describes the design, fabrication and measurement of a single-pole-double-throw(SPDT) MMIC switch applicable to IEEE 802.15.3c standard wireless local area network(WLAN) using an ETRI`s 0.12um GaAs/AlGaAs pHEMT switch library and high isolation switch cell design technologies. This SPDT switch has a measured insertion loss of -3.1dB~-4.2dB and isolation of -41.7dB~-42.5dB in the 59~63GHz frequency band. Thermal test was also performed to evaluate the thermal stability of switching performances from -50℃ to +100℃ with a step of 20℃ in an atmosphere. The variations of insertion loss and isolation at a center frequency of 60 GHz were -2.17±0.15 dB and -41.07±0.85 dB, respectively. This means the SPDT switch is very stable at both high and low temperatures. Therefore we can conclude that the developed high isolation pHEMT SPDT MMIC switch is suitable for an Rx-Tx switch of WLAN system. However, the chip size of 3.0 mm×0.99 mm is still large and then we need an additional work for developing a new switch cell to decrease the chip size.
Production of Cloned Jeju Black Cattle by Somatic Cell Nuclear Transfer and Flavonoid Treatment
Jae Youn Kim,Kyoung Ha So,Min Jee Park,Hyo Young Park,Eun Hyung Noh,Eun Ji Noh,Seong Ho Mun,Young Hoon Kim,Sung Soo Lee,Moon Suck Ko,Eun Young Kim,Se Pill Park 한국동물생명공학회(구 한국동물번식학회) 2009 발생공학 국제심포지엄 및 학술대회 Vol.2009 No.1