http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
李德憲,吳熙弼,田載植 충남대학교 자연과학연구소 1981 忠南科學硏究誌 Vol.8 No.2
Tritium concentrations in well water of Daedong area and its vicinity were measured by means of electrolytic enrichment technique and liquid scintillation counting method. Samples were taken from six different wells spread around Dae-deog Science Town at least ten kilometers and/or from each other, so as not to have any possible influence from other water sources and/or streams. The tritium enrichment factor in the electrolytic process was determined using standardized tritiated water of known activity. Results show that the mean value of tritium concentration in well water of this area is 41.60±2.52 TU with maximum and minimum of 44.33±2.64 TU and 39.20±2.65 TU, respectively, as of September 1981, which are quite reasonably comparable with 40 TU measured by Fireman and Schwarzer for well water.
Characterization of Reverse Leakage Current of Shallow Silicide Junction
Lee,Hi Deok,Lee,Sang Gi,Kim,Ha Joong,Lee,Young Jong,Hwang,Jeong Mo 대한전자공학회 1997 ICVC : International Conference on VLSI and CAD Vol.5 No.1
The properties of PECVD-WN_x films produced in a WF_6-N₂-H₂ gas system and their application as a glue layer for a W metallization were investigated. As the N₂/H₂ ratio in reactant gas increased from 0 to 1.5, the nitrogen concentration and the electrical resistivity in WNX film increased from 0 to 25 at % and 25.5 to 1009 Ω-cm, respectively. In the N₂/H₂ ranges, the microstructure of the film was also shown to be changed as bcc-W, mixture of W+WN+W₂N, amorphous or nanocrystal, and W₂N, in turn. The film of the best qualities was obtained at the N₂/H₂ ratio of 0.25, where it represented the most smooth surface, 230μΩ-cm of resistivity, 13 at.% of nitrogen concentration, nanocrystalline structure close to amorphous at as-deposited state, and 90% of bottom step coverage. In order to proceed further CVD-W metallization, a PECVD-W layer was employed as a seed layer for the stable deposition of the thermal CVD-W onto the WNX layer. A tri-layer structure of (thermal)CVD-W/PECVDW/PECVD-WN_x with a good thermal stability was successfully achieved in an in-situ process, and hence its application to CVD-W metallizations seemed to be promising.
Lee, Seung-Deok,Seo, Jung-Chul,Lee, Sang-Hoon,Kim, Yong-Suk,Jang, Jun-Hyouk,Park, Hi-Joon,Choi, Sun-Mi,Park, Ji-Eun,Shin, Leem-Hee,Hahn, Seo-kyung,Norihito, Takahashi,Eiichi, Sumiya,Itoh, Kazunori,Tos Society for Meridian and Acupoint 2008 Korean Journal of Acupuncture Vol.25 No.4
Background : One of the characteristics of acupuncture, a popular modality for treating musculoskeletal pain, is a plurality in diagnosis and treatment that can profoundly influence the treatment outcome. This multiplicity in treatment modality has to be considered in any research on the effectiveness of acupuncture. Many practitioners stress the necessity for individualized patient treatment, including acupuncture point selection and manipulation technique. However, the importance of individualization in acupuncture treatment, compared with standardization, has received little attention in clinical trials. The aim of the future study described here is therefore to compare the effectiveness of individualized acupuncture for knee osteoarthritis with standardized acupuncture and no acupuncture in patients with knee osteoarthritis. Methods : A total of 195 patients aged 50 years and over with knee pain, will be randomly divided into three treatment groups: individualized acupuncture, standardized acupuncture, and waiting list. Outcome data will be collected through patient.completed questionnaires before randomization, and at 4, 8 and 12 weeks after randomization. The questionnaires will be investigated demographic details as well as information on pain, movement and function of the affected knee, general health and quality of life. Discussion : This paper presents details on the rationale, design, and methods of the trial.
Lee, Jeongchan,Li, Meng,Kim, Jeyoung,Shin, Geonho,Lee, Ga-won,Oh, Jungwoo,Lee, Hi-Deok The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.2
Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance ($R_c$) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% $H_2$ and 4% $H_2$ annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of $R_c$ at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest $R_c$ in 4% $H_2$ sample, that is, higher current for 4% $H_2$ sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.
Lee, Sang Kyung,Kang, Chang Goo,Lee, Young Gon,Cho, Chunhum,Park, Eunji,Chung, Hyun Jong,Seo, Sunae,Lee, Hi-Deok,Lee, Byoung Hun Elsevier 2012 Carbon Vol.50 No.11
<P><B>Abstract</B></P><P>Graphene based low noise amplifier has been studied actively because the noise characteristics of graphene devices are known to be superior to those of silicon devices. However, 1/<I>f</I> noise characteristics of graphene grown by chemical vapor deposition (CVD) may increase by an order of magnitude when measured before the charge exchange reaction at the interface of the graphene and substrate is saturated. Based on the close correlation between the level of low frequency noise signal and fast charge exchange reaction (in milliseconds), the conductivity fluctuation of graphene caused by the interfacial charge exchange reaction may be the source of the increased low frequency noise. This result suggests that the current assessment of noise characteristics is too optimistic for graphene and that the defect density of CVD graphene needs to be further reduced to minimize the charge exchange reaction.</P>
Lee,Sang Gi,Lee,Hi Deok,Lee,Young Jong,Jeong,Ju Young,Kwon,Oh Kyong,Lee,Chang Hyo 대한전자공학회 1997 ICVC : International Conference on VLSI and CAD Vol.5 No.1
We investigate the effects of various ILD structures on device performance. The ILD films' property of electron trap generation rate and mobile ion were measured by constant current FN stress method and BTS(Bias Temperature Stress). The electron trap generation rate analysis shows that the HLD/BPSG and PETEOS/BPSG structure have more negative trap charges inside the gate oxide than the PETEOS/USG structure. The BTS results for the metal gate structure shows that PETEOS/USG results more mobile ions in the oxide than the HLD/BPSG. Also, the PETEOS/USG structure shows better gate oxide lifetime but more device degradation.
Pillar Type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Cells with Modulated Tunneling Oxide
Lee, Sang-Youl,Yang, Seung-Dong,Yun, Ho-Jin,Jeong, Kwang-Seok,Kim, Yu-Mi,Kim, Seong-Hyeon,Lee, Hi-Deok,Lee, Ga-Won,Oh, Jae-Sub The Korean Institute of Electrical and Electronic 2013 Transactions on Electrical and Electronic Material Vol.14 No.5
In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.
( Seung Deok Lee ),( Jung Chul Seo ),( Sang Hoon Lee ),( Young Suk Kim ),( Jun Hyouk Jang ),( Hi Joon Park ),( Sun Mi Choi ),( Ji Eun Park ),( Leem Hee Shin ),( Seo Kyung Hahn ),( Takahashi Norihito ) 대한경락경혈학회 2008 Korean Journal of Acupuncture Vol.25 No.4
Background: One of the characteristics of acupuncture, a popular modality for treating musculoskeletal pain, is a plurality in diagnosis and treatment that can profoundly influence the treatment outcome. This multiplicity in treatment modality has to be considered in any research on the effectiveness of acupuncture. Many practitioners stress the necessity for individualized patient treatment, including acupuncture point selection and manipulation technique. However, the importance of individualization in acupuncture treatment, compared with standardization, has received Little attention in clinical trials. The aim of the future study described here is therefore to compare the effectiveness of individualized acupuncture for knee osteoarthritis with standardized acupuncture and no acupuncture in patients with knee osteoarthritis. Methods: A total of 195 patients aged 50 years and over with knee pain, will be randomly divided into three treatment groups: individualized acupuncture, standardized acupuncture, and waiting List. Outcome data will be collected through patient?completed questionnaires before randomization, and at 4, 8 and 12 weeks after randomization. The questionnaires will be investigated demographic details as well as information on pain, movement and function of the affected knee, general health and quality of Life. Discussion: This paper presents details on the rationale, design, and methods of the trial.
위험도 분석을 통한 철도차량 진단모니터링 대상부품 선정 방안
이덕구(Deok-koo Lee),이희성(Hi Sung Lee) 한국도시철도학회 2017 한국도시철도학회논문집 Vol.5 No.3
철도차량은 국민의 주요 교통수단 중 하나로서 철도차량의 장애 발생은 열차운영 및 승객의 정서적 서비스에 영향을 준다. 이를 해결하기 위해, 기존의 철도차량 정비체계가 실시간 상태감시를 통해 장애율 감소는 물론 조기에 장애를 감지하는 상태기반 유지보수체계로 변화가 모색되고 있다. 즉, 상태기반의 유지보수 체계로 전환을 하고자 한다. 이 논문은 철도차량의 실시간 상태감시를 위한 진단 모니터링을 실행하기 위하여, 철도차량의 운행 중 서비스 고장건수에 의한 MKBSF지표를 활용한 위험도 분석을 통하여 진단 모니터링 대상품목을 선정하였다. Railway is one of the main transportation for the public. The occurrences of railway car disabilities can affect the commercial operation of the train and emotional service level of the passenger. In order to solve these problems, the maintenance system of railway cars will be changed to condition-based maintenance system such that detect failures earlier and to switch to condition-based maintenance as well as reduce the failure rate through real-time monitoring. To apply real-time diagnostic monitoring system for the railway cars, the items to do real-time diagnostic monitoring are selected through the risk analysis using the MKBSF index.