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Transformation of charge polarity at HfO2/GaN interfaces through post-deposition annealing
Han Yoolim,Go Ju Mi,Yang Kyungmi,Kim Minsu,Kim Kwangeun 한국물리학회 2024 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.84 No.5
The transformation of charge polarity at HfO2/GaN interfaces was investigated through the post-deposition annealing (PDA) at 500 °C, 700 °C and 900 °C for 3 min. The change in surface property of atomic-layer deposition HfO2/GaN with the PDA conditions was estimated by a contact angle measurement. The PDA improved surface adhesion and thus decreased the contact angle of HfO2, which was shown with the PDA up to 700 °C. The increased contact angle with the PDA at 900 °C was presumably due to the transformation of crystallinity of HfO2 flm from amorphous to polycrystalline. The charge polarity at the HfO2/GaN interfaces was changed from negative to positive with the elevated PDA temperature. The energy band bending at the HfO2/GaN interfaces was described based on the elemental binding energy obtained by X-ray photoelectron spectroscopy. The charge polarity at the HfO2/GaN interface was converted at the 700 °C PDA with increased net charge density. The PDA afected the interface property of HfO2/GaN and determined the interface polarity and charge density.