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생쥐 위장관의 Interstitial cells of Cajal(ICC)에 대한 면역조직화학적 연구
김영철,차경훈,신무경,임건한,김주영,안병수,김장만,양경철,박도영,오재욱,장인엽 조선대학교 2003 The Medical Journal of Chosun University Vol.28 No.1
Background and Objectives : Interstitial cells of Cajal(ICC) are the pacemakers in gastrointestinal tract that modulates gastrointestinal motiliey and these cells also transmit neural input from enteric nerves to smooth muscles. Recent work on tissues from patients with motility disorders that suggest that loss or defect in ICC could be related to pathophysiology in human and animal models. Immunolabelling of ICC in intestinal wall is recently developed by using specific marker, anti-c-kit antibody. Immunohistochemistry was done for ICC network in attempt to provide a morphological basis for the mechanism regulating gastrointestinal motility Methods : Cryosection was done, and whole-mount preparations of mouse stomach, gastrointestinal tract were immunolabelled using the anti-c-Kit. Immunolabelled ICC networks were observed under a confocal laser scanning microscopy. Results : According to three dimensional reconstruction study, we found that the c-Kit-positive celluar networks were widely distributed in the gastrointestinal muscle (1) circular muscle layer(IC-IM), (2) myenteric plexus(IC-MY), (3) deep muscular plexus(IC-DMP) in ileum, (4) submucosal plexus(IC-SMP) and longitudinal muscle layer(IC-LM) in colon. Conclusion : The characteristic profiles of ICC celluar networks provide a morphological basis upon the mechanism regulating gastrointestinal motility. Additional studies for the enteric nerves-ICC interaction are need to evaluate the detailed roles of Icc in gastrointestinal tract.
Park, Chan Woo,Ahn, Chang-Geun,Yang, Jong-Heon,Baek, In-Bok,Ah, Chil Seong,Kim, Ansoon,Kim, Tae-Youb,Sung, Gun Yong IOP Pub 2009 Nanotechnology Vol.20 No.47
<P>The sensitivity of ‘top-down’ fabricated Si nanochannel field effect transistor (FET) biosensors has been analyzed quantitatively, as a function of the channel width and doping concentration. We have fabricated 130-, 150-, and 220 nm-wide Si FET channels with 40 nm-thick p-type silicon-on-insulator (SOI) layers doped at 8 × 10<SUP>17</SUP> and 2 × 10<SUP>18</SUP> cm<SUP>−3</SUP>, and characterized their sensitivity in response to the variation of surface charges as hydrogen ion sensors within buffer solutions of various pH levels. Within the range of channel width and doping concentration investigated, the pH sensitivity of Si channels is enhanced much more effectively by decreasing the doping concentration than by reducing the channel width, which suggests a practical strategy for achieving high sensitivity with less effort than to reduce the channel width. Similar behavior has also been confirmed in the immunodetection of prostate specific antigen (PSA). Combined with excellent reproducibility and uniformity of the channel structure, high controllability of the doping concentration can make the ‘top-down’ fabrication a very useful approach for the massive fabrication of high-sensitivity sensor platforms in a cost-effective way. </P>
Biosensors using the Si nanochannel junction-isolated from the Si bulk substrate
Ahn, Chang-Geun,Park, Chan Woo,Yang, Jong-Heon,Ah, Chil Seong,Kim, Ansoon,Kim, Tae-Youb,Yu, Han Young,Jang, Moongyu,Kim, Sang-Hoon,Baek, In-Bok,Lee, Seongjae,Sung, Gun Yong American Institute of Physics 2009 JOURNAL OF APPLIED PHYSICS - Vol.106 No.11
임종엽,이용구,박종범,김민영,양계준,임동건,Lim, Jong-Youb,Lee, Yong-Koo,Park, Jong-Bum,Kim, Min-Young,Yang, Kea-Joon,Lim, Dong-Gun 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.9
$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.
주가지수선물거래 도입이 주식시장 분산성에 미치는 영향 : 한국에서의 실증분석
김인준,김동석,박건엽 ( In Joon Kim,Tong Suk Kim,Gun Youb Park ) 한국파생상품학회 1997 선물연구 Vol.5 No.1
수선물거래 도입이 주식시장 분산성에 미치는 영향에 대하여 조사하였다. 분석 방법으로 주가지수선물이 상장된 시점을 중심으로 전·후 100거래일 日종가자료에 대해 KOSPI 지수, KOSPI 200 지수, OTHERS 지수(KOSPI 200에 대한 비교지수로 새로 만든 지수) 수익률의 분산을 모수적 방법의 F-검정, 비모수적 방법의 동일분포검정과 가변수를 가진 ARCH 모형을 이용하여 서로 비교하는 사건연구 방법을 택하였다. 본 연구의 결과, 주가지수선물의 대상지수인 KOSPI 200 지수 수익률의 분산이 주가지수선물거래 도입이후 약간 증가한 것으로 나타났으나, 통계적으로는 유의하지 못하였다. 또한 OTHERS 지수 수익률의 분산 증가가 KOSPI 200 지수의 경우보다 상대적으로 더 큰 것으로 나타났다. 이를 통해 관찰된 KOSPI 200 지수 수익률의 분산 증가는 주가지수선물거래 도입에 의한 것이 아니라 음(-)의 수익률에 의한 것이라고 보여진다. 따라서, 한국의 경우 주가지수선물 거래의 도입이 주식시장의 분산 증가를 초래하지는 않았다고 할 수 있다.
Ah, Chil-Seong,Kim, An-Soon,Kim, Wan-Joong,Park, Chan-Woo,Ahn, Chang-Geun,Yang, Jong-Heon,Baek, In-Bok,Kim, Tae-Youb,Sung, Gun-Yong Korean Chemical Society 2010 Bulletin of the Korean Chemical Society Vol.31 No.6
In this study, we have developed a new detection method using Si field effect transistor (FET)-type biosensors, which enables the direct monitoring of antigen-antibody binding within very high-ionic-strength solutions such as 1$\times$PBS and human serum. In the new method, as no additional dilution or desalting processes are required, the FET-type biosensors can be more suitable for ultrasensitive and real-time analysis of raw sample solutions. The new detection scheme is based on the observation that the strength of antigen-antibody-specific binding is significantly influenced by the ionic strength of the reaction solutions. For a prostate specific antigen (PSA), in some conditions, the binding reaction between PSA and anti-PSA in a low-ionic strength reaction solution such as 10 ${\mu}M$ phosphate buffer is weak (reversible), while that in high-ionic strength reaction solutions such as 1$\times$PBS or human serum is strong.
폴리이미드 기판 위에 RF 마그네트론 스퍼터링 공정으로 증착된 ZnO:Ga 박막의 특성
박승범,김정연,김병국,임종엽,여인환,안상기,권순용,박재환,임동건,Park, Seung-Beum,Kim, Jeong-Yeon,Kim, Byeong-Guk,Lim, Jong-Youb,Yeo, In-Hwan,Ahn, Sang-Ki,Kweon, Soon-Yong,Park, Jae-Hwan,Lim, Dong-Gun 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.5
The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on polyimide substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the polyimide substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 120 sec, the resistivity of GZO films on the polyimide substrate was $1.90{\times}10^{-3}{\Omega}-cm$.
SOD방법을 이용한 저가 EFG 리본 실리콘 태양전지의 효율 향상에 관한 연구
김병국,임종엽,저호,오병진,박재환,이진석,장보윤,안영수,임동건,Kim, Byeong-Guk,Lim, Jong-Youb,Chu, Hao,Oh, Byoung-Jin,Park, Jae-Hwan,Lee, Jin-Seok,Jang, Bo-Yun,An, Young-Soo,Lim, Dong-Gun 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.3
The high cost of crystalline silicon solar cells has been considered as one of the major obstacles to their terrestrial applications. Spin on doping (SOD) is presented as a useful process for the manufacturing of low cost solar cells. Phosphorus (P509) was used as an n-type emitters of solar cells. N-type emitters were formed on p-type EFG ribbon Si wafers by using a SOD at different spin speed (1,000~4,000 rpm), diffusion temperatures ($800^{\circ}C{\sim}950^{\circ}C$), and diffusion time (5~30 min) in $N_2+O_2$ atmosphere. With optimum condition, we were able to achieve cell efficiency of 14.1%.
Size and Surface Modification Effects on the pH Response of Si Nanowire Field-Effect Transistors
Baek, In-Bok,Li, Xianhong,Lee, Seongjae,Ah, Chil Seong,Yang, Jong-Heon,Park, Chan Woo,Kim, Tae-Youb,Sung, Gun Yong American Scientific Publishers 2012 Journal of Nanoscience and Nanotechnology Vol.12 No.7
<P>We investigated the effects of Si nanowire (SiNW) dimensions and their surface modifications on the pH-dependent electronic transport characteristics of SiNW Electrolyte-insulator-Semiconductor Field-Effect Transistors (EISFETs). The threshold voltages, Vth's, of all devices were extracted from the Id-Vg characteristics with Vg applied to the reference electrode immersed in different pH solutions, and their pH-dependences were analyzed for various devices. We found that our devices produce the systematic pH-dependence of Vth with respect to the SiNW's length and show significant changes in a linear pH region and a pH sensitivity upon the Si surface modifications. Particularly in the case of the APTES-treated surface, the linear variation was observed in the wide region of pH = 2 to approximately 11 with the sensitivity of 54.7 +/- 0.6 mV/pH. Also we compared our data to a theoretical result based on the Gouy-Chapmam-Stern-Graham model and found a reasonable agreement between them.</P>