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Sang-Il Pyeon(편상일),Seong-Min Park(박성민),Dae-Ung Jeong(정대웅),Hui-Seong Ok(옥희성),Hamin Park(박하민) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
Following developments in the display industry, research and development related to the application of a-IGZO material are also taking place in the memory field. In this paper, we analyzed the threshold voltage reliability and hump effect of a-IGZO devices under voltage and illumination stress. We comprehensively analyzed the changes in the threshold voltage and the magnitude of the hump effect over time under the situation where negative voltage stress is applied while light stress is intermittently present, and we investigate an oxygen vacancy mechanism to explain the behavior.