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Chaehyeon Ahn,Hyunseob Lim 대한화학회 2022 Bulletin of the Korean Chemical Society Vol.43 No.10
Bandgap engineering is an important prerequisite for various applications oftwo-dimensional (2D) transition metal dichalcogenides (TMD). A reduction inthe dimension from 2D has been one of the methods to control the elec-tronic structure, by which a quantum confinement effect in the additionalaxis(es) can result in the widening of band structures. A vapor-phase processfor synthesizing monolayer MoS2nanomesh film or MoS2quantum dot isdeveloped based on the inorganic molecular chemical vapor deposition. Thevapor-phase process can control MoS2coverage by adjusting growth times.Therefore, the formation of nanostructures can be confirmed based on thegrowth time. The quantum confinement effect in monolayer MoS2nanomeshfilms and MoS2quantum dots is also confirmed via spectroscopic investiga-tions, which induce a blue shift, indicating bandgap widening. Consequently,this approach can be used to synthesize lower-dimensional TMD materialsfor bandgap engineering, which is an essential process in optical or optoe-lectrical applications.