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Bouangeune, Daoheung,Choi, Sang-Sik,Cho, Deok-Ho,Shim, Kyu-Hwan,Chang, Sung-Yong,Leem, See-Jong,Choi, Chel-Jong The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.4
Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.
Bouangeune, Daoheung,Choi, Sang-Sig,Choi, Chel-Jong,Cho, Deok-Ho,Shim, Kyu-Hwan The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.1
A bidirectional transient voltage suppression (TVS) diode consisting of specially designed $p^--n^{{+}+}-p^-$ multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using I-V, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multi-junctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K-450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped $n^{{+}+}$ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as $0.2{\Omega}$, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ${\pm}4.0$ kV of MM and ${\pm}14$ kV of IEC, and exceeding ${\pm}8$ kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in $p^--n^{{+}+}-p^-$ multi-junctions.
Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications
Bouangeune, Daoheung,Vilathong, Sengchanh,Cho, Deok-Ho,Shim, Kyu-Hwan,Leem, See-Jong,Choi, Chel-Jong The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.6
This research presented the concept of employing the punch-through diode triggered SCRs (PTTSCR) for low voltage ESD applications such as transient voltage suppression (TVS) devices. In order to demonstrate the better electrical properties, various traditional ESD protection devices, including a silicon controlled rectifier (SCR) and Zener diode, were simulated and analyzed by using the TCAD simulation software. The simulation result demonstrates that the novel PTTSCR device has better performance in responding to ESD properties, including DC dynamic resistance and capacitance, compared to SCR and Zener diode. Furthermore, the proposed PTTSCR device has a low reverse leakage current that is below $10^{-12}$ A, a low capacitance of $0.07fF/mm^2$, and low triggering voltage of 8.5 V at $5.6{\times}10^{-5}$ A. The typical properties couple with the holding voltage of 4.8 V, while the novel PTTSCR device is compatible for protecting the low voltage, high speed ESD protection applications. It proves to be good candidates as ultra-low capacitance TVS devices.
Daoheung Bouangeune,Sang-Sig Choi,최철종,길연호,양전욱,Deok-Ho Cho,심규환 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.5
Five transient voltage suppression (TVS) diodes with breakdown voltages (BV) of 6, 7, 11, 13 and 15 V have been developed using low-temperature (LT) epitaxy technology and an LT fabrication process. The electrostatic discharge (ESD) performance and temperature dependency of reverse leakage current are investigated by applying the IEC61000-4-2 (IEC) standard and an I-V-T analysis. The TVS diodes exhibited excellent ESD robustness, exceeding the standard ESD requirement of IEC level 4, 8 kV in contact discharge, while also maintaining the reverse leakage current level below 10−9 A. Excellent ESD performance was found to be relevant for lower breakdown voltage TVS diodes. The reverse leakage currents showed substantial changes in thermal activation energy from 0.43 to 0.6 eV with respect to BV control from 6 to 15 V. The increased activation energy at high BV was attributed to the transition of the conduction mechanism from tunneling mode to generation-recombination mode. The reduction of reverse leakage current from a generation-recombination to tunneling conduction mechanism is expected to improve the ESD performance of TVS diodes.
Daoheung Bouangeune,최상식,조덕호,심규환,장성용,임시종,최철종 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.4
Fast recovery diodes (FRDs) were developed using the p++/n-/n++ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, <10-9 A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to 5.5 kV of HBM and 3.5 kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, Ipp, max, up to 30 A in the forward mode and down to -24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.
Daoheung Bouangeune,Sang-Sig Choi,Chel-Jong Choi,Deok-Ho Cho,Kyu-Hwan Shim 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.1
A bidirectional transient voltage suppression (TVS) diode consisting of specially designed p--n++-p-multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using IV, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multijunctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K ? 450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped n++ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as 0.2 ;, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ± 4.0 kV of MM and ± 14 kV of IEC, and exceeding ± 8 kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in p-n++p-multi-junctions.
Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications
Daoheung Bouangeune,Sengchanh Vilathong,Deok-Ho Cho,Kyu-Hwan Shim,See-Jong Leem,Chel-Jong Choi 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.6
This research presented the concept of employing the punch-through diode triggered SCRs (PTTSCR) for low voltage ESD applications such as transient voltage suppression (TVS) devices. In order to demonstrate the better electrical properties, various traditional ESD protection devices, including a silicon controlled rectifier (SCR) and Zener diode, were simulated and analyzed by using the TCAD simulation software. The simulation result demonstrates that the novel PTTSCR device has better performance in responding to ESD properties, including DC dynamic resistance and capacitance, compared to SCR and Zener diode. Furthermore, the proposed PTTSCR device has a low reverse leakage current that is below 10<SUP>-12</SUP> A, a low capacitance of 0.07 fF/㎛², and low triggering voltage of 8.5 V at 5.6×10<SUP>-5</SUP> A. The typical properties couple with the holding voltage of 4.8 V, while the novel PTTSCR device is compatible for protecting the low voltage, high speed ESD protection applications. It proves to be good candidates as ultra-low capacitance TVS devices.