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A 20-Gb/s Transformer-Based Current-Mode Optical Receiver in 0.13- <tex> $\mu\hbox{m}$</tex> CMOS
Jungwon Han,Booyoung Choi,Mikyung Seo,Jisook Yun,Dongmyung Lee,Taewook Kim,Yunseong Eo,Sung Min Park IEEE 2010 IEEE transactions on circuits and systems. a publi Vol.57 No.5
<P>A 20-Gb/s current-mode optical receiver is realized in a 0.13-μm CMOS process, which consists of a common-gate transimpedance amplifier (TIA) with on-chip transformers, a six-stage postamplifier (PA) with an offset cancellation network, and an output buffer. The transformer-based inductive peaking technique is exploited in the TIA to isolate the parasitic capacitances at high-impedance nodes and, hence, to enlarge the bandwidth. The PA incorporates source degeneration and interleaving active feedback techniques to achieve wide bandwidth and flat frequency response so as not to degrade the operation speed of the whole optical receiver. Measured results demonstrate 60-dbΩ transimpedance gain, 12.6-GHz bandwidth even with 0.4-pF large input parasitic capacitance, ߝ13-dBm sensitivity for a 10<SUP>-12</SUP> bit error rate, and 38.3-mW power consumption from a single 1.2-V supply.</P>
아날로그 어댑티브 이퀄라이저를 이용한 120-㏈Ω 8-Gb/s CMOS 광 수신기
이동명(Dongmyung Lee),최부영(Booyoung Choi),한정원(Jungwon Han),한건희(Gunhee Han),박성민(Sung Min Park) 대한전자공학회 2008 電子工學會論文誌-SD (Semiconductor and devices) Vol.45 No.6
트랜스임피던스 증폭기는 전체 광 수신기의 성능을 결정하는 가장 핵심적인 블록으로써 높은 트랜스임피던스 이득과 기가 비트급의 넓은 대역폭을 요구한다. 본 논문에서는 아날로그 어댑티브 이퀄라이저를 이용하여 트랜스임피던스 증폭기의 대역폭을 보상하고, 리미팅 증폭기를 이용하여 전체 트랜스임피던스 이득을 증가 시키는 단일 칩 광 수신기의 아날로그 회로를 제안한다. 0.13㎛ CMOS 공정을 이용하여 설계한 광 수신기는 포스트 레이아웃 시뮬레이션 결과, 120㏈Ω의 트랜스임피던스 이득과 5.88㎓의 대역폭을 갖는다. 수동 인덕터 소자를 사용하는 대신 네거티브 임피던스 컨버터 회로를 적용함으로써 0.088㎟의 매우 작은 칩 사이즈를 갖는다. Transimpedance amplifier(TIA) is the most significant element to determine the performance of the optical receiver, and thus the TIA must satisfy the design requirements of high gain and wide bandwidth. In this paper, we propose a novel single chip optical receiver that exploits an analog adaptive equalizer and a limiting amplifier to enhance the gain and bandwidth performance, respectively. The proposed optical receiver is designed by using a 0.13㎛ CMOS process and its post-layout simulations show 120㏈Ω transimpedance gain and 5.88㎓ bandwidth. The chip core occupies the area of 0.088㎟, due to utilizing the negative impedance converter circuit rather than using on-chip passive inductors.
〈논문〉 ZnO 나노입자 삽입을 이용한 유기태양전지 효율 향상
김강민(Kangmin Kim),정부영(Booyoung Jung),김정원(Jungwon Kim),김우철(Woochul Kim) 대한기계학회 2009 대한기계학회 춘추학술대회 Vol.2009 No.11
In organic photovoltaics, the thickness of active layer needs to be thick to absorb enough light, whereas the thickness better to be thin for efficient charge separation, i.e., small exciton diffusion length. There is a trade-off between thickness increase for enough light absorption and thickness decrease for efficient charge separation. The optimum thickness is around 100㎚ in previous works[1, 2]. In our research, by adapting the nonmetal ZnO nanoparticles, we scatter the light thereby effectively increase the light absorption. This results in increasing the energy conversion efficiency.