http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Baek, Ju Yeol,Kang, Tae Soo,Rha, Seung-Woon,Choi, Byoung Geol,Park, Sang Ho,Jeong, Myung Ho Wolters Kluwer Health, Inc. All rights reserved. 2018 Coronary artery disease Vol.29 No.5
<P>BackgroundReduced preprocedural thrombolysis in myocardial infarction (TIMI) flow in patients with ST-segment elevation myocardial infarction (STEMI) is known to be associated with increased mortality. However, clinical implications of reduced preprocedural TIMI flow in patients with non-ST-segment elevation myocardial infarction (NSTEMI) have not been fully elucidated as yet. The aim of the present study was to compare the clinical influence of reduced preprocedural TIMI flows between patients with STEMI and NSTEMI undergoing percutaneous coronary intervention (PCI).MethodsFrom the Korea Acute Myocardial Infarction Registry, a total of 7336 AMI patients with angiographically confirmed reduced preprocedural TIMI flow (TIMI 0/1) during PCI were selected and divided into STEMI (n=4852) and NSTEMI (n=2484) groups. The 12-month composite of total death, nonfatal myocardial infarction, coronary artery bypass graft, and repeated PCI was compared between the two groups.ResultsAfter adjustment of baseline confounders by propensity score stratification, the NSTEMI group had lower incidences of major adverse cardiac events than the STEMI group (7.15 vs. 11.19%; hazard ratio: 0.63; 95% confidence interval: 0.47-0.84; P=0.001) at 12 months, which was largely attributable to the lower incidences of total deaths (2.43 vs. 3.99%; P=0.04) and repeated PCI (3.81 vs. 6.41%; P=0.01).ConclusionAmong AMI patients with TIMI 0/1, patients with NSTEMI had better outcomes compared with those of patients with STEMI on the basis of the incidences of 12-month outcomes. This could be attributable to lower total death and repeated revascularization in patients with NSTEMI.</P>
Prediction Models for Suicide Attempts among Adolescents Using Machine Learning Techniques
Jae Seok Lim(Jae Seok Lim),Chan-Mo Yang(Chan-Mo Yang),Ju-Won Baek(Ju-Won Baek),Sang-Yeol Lee(Sang-Yeol Lee),Bung-Nyun Kim(Bung-Nyun Kim) 대한정신약물학회 2022 CLINICAL PSYCHOPHARMACOLOGY AND NEUROSCIENCE Vol.20 No.4
Objective: Suicide attempts (SAs) in adolescents are difficult to predict although it is a leading cause of death among adolescents. This study aimed to develop and evaluate SA prediction models based on six different machine learning (ML) algorithms for Korean adolescents using data from online surveys. Methods: Data were extracted from the 2011−2018 Korea Youth Risk Behavior Survey (KYRBS), an ongoing annual national survey. The participants comprised 468,482 nationally representative adolescents from 400 middle and 400 high schools, aged 12 to 18. The models were trained using several classic ML methods and then tested on internal and external independent datasets; performance metrics were calculated. Data analysis was performed from March 2020 to June 2020. Results: Among the 468,482 adolescents included in the analysis, 15,012 cases (3.2%) were identified as having made an SA. Three features (suicidal ideation, suicide planning, and grade) were identified as the most important predictors. The performance of the six ML models on the internal testing dataset was good, with both the area under the receiver operating characteristic curve (AUROC) and area under the precision−recall curve (AUPRC) ranging from 0.92 to 0.94. Although the AUROC of all models on the external testing dataset (2018 KYRBS) ranged from 0.93 to 0.95, the AUPRC of the models was approximately 0.5. Conclusion: The developed and validated SA prediction models can be applied to detect high risks of SA. This approach could facilitate early intervention in the suicide crisis and may ultimately contribute to suicide prevention for adolescents.
Baek, Kwang Yeol,Lee, Hyun-Hee,Son, Geun Ju,Lee, Pyeong An,Roy, Nazish,Seo, Young-Su,Lee, Seon-Woo The Korean Society of Plant Pathology 2018 Plant Pathology Journal Vol.34 No.2
Accurate and rapid detection of bacterial plant pathogen is the first step toward disease management and prevention of pathogen spread. Bacterial plant pathogens Clavibacter michiganensis subsp. nebraskensis (Cmn), Pantoea stewartii subsp. stewartii (Pss), and Rathayibacter tritici (Rt) cause Goss's bacterial wilt and blight of maize, Stewart's wilt of maize and spike blight of wheat and barley, respectively. The bacterial diseases are not globally distributed and not present in Korea. This study adopted comparative genomics approach and aimed to develop specific primer pairs to detect these three bacterial pathogens. Genome comparison among target pathogens and their closely related bacterial species generated 15-20 candidate primer pairs per bacterial pathogen. The primer pairs were assessed by a conventional PCR for specificity against 33 species of Clavibacter, Pantoea, Rathayibacter, Pectobacterium, Curtobacterium. The investigation for specificity and sensitivity of the primer pairs allowed final selection of one or two primer pairs per bacterial pathogens. In our assay condition, a detection limit of Pss and Cmn was $2pg/{\mu}l$ of genomic DNA per PCR reaction, while the detection limit for Rt primers was higher. The selected primers could also detect bacterial cells up to $8.8{\times}10^3cfu$ to $7.84{\times}10^4cfu$ per gram of grain seeds artificially infected with corresponding bacterial pathogens. The primer pairs and PCR assay developed in this study provide an accurate and rapid detection method for three bacterial pathogens of grains, which can be used to investigate bacteria contamination in grain seeds and to ultimately prevent pathogen dissemination over countries.
Suppression Techniques of Subthreshold Hump Effect for High-Voltage MOSFET
Baek, Ki-Ju,Na, Kee-Yeol,Park, Jeong-Hyeon,Kim, Yeong-Seuk The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.5
In this paper, simple but very effective techniques to suppress subthreshold hump effect for high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) technology are presented. Two methods are proposed to suppress subthreshold hump effect using a simple layout modification approach. First, the uniform gate oxide method is based on the concept of an H-shaped gate layout design. Second, the gate work function control method is accomplished by local ion implantation. For our experiments, $0.18{\mu}m$ 20 V class HV CMOS technology is applied for HV MOSFETs fabrication. From the measurements, both proposed methods are very effective for elimination of the inverse narrow width effect (INWE) as well as the subthreshold hump.
Performance Optimization of LDMOS Transistor with Dual Gate Oxide for Mixed-Signal Applications
Baek, Ki-Ju,Kim, Yeong-Seuk,Na, Kee-Yeol The Korean Institute of Electrical and Electronic 2015 Transactions on Electrical and Electronic Material Vol.16 No.5
This paper reports the optimized mixed-signal performance of a high-voltage (HV) laterally double-diffused metaloxide-semiconductor (LDMOS) field-effect transistor (FET) with a dual gate oxide (DGOX). The fabricated device is based on the split-gate FET concept. In addition, the gate oxide on the source-side channel is thicker than that on the drain-side channel. The experiment results showed that the electrical characteristics are strongly dependent on the source-side channel length with a thick gate oxide. The digital and analog performances according to the source-side channel length of the DGOX LDMOS device were examined for circuit applications. The HV DGOX device with various source-side channel lengths showed reduced by maximum 37% on-resistance (R<sub>ON</sub>) and 50% drain conductance (g<sub>ds</sub>). Therefore, the optimized mixed-signal performance of the HV DGOX device can be obtained when the source-side channel length with a thick gate oxide is shorter than half of the channel length.
Device Optimization of N-Channel MOSFETs with Lateral Asymmetric Channel Doping Profiles
Baek, Ki-Ju,Kim, Jun-Kyu,Kim, Yeong-Seuk,Na, Kee-Yeol The Korean Institute of Electrical and Electronic 2010 Transactions on Electrical and Electronic Material Vol.11 No.1
In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a $0.35\;{\mu}m$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and $1.5\;{\mu}m$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($i_{SUB}$), drain to source leakage current ($i_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.
N-Channel Dual-Workfunction-Gate MOSFET for Analog Circuit Applications
Kee-Yeol Na,Ki-Ju Baek,Yeong-Seuk Kim IEEE 2012 IEEE transactions on electron devices Vol.59 No.12
<P>Analog behaviors of n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with dual-workfunction-gate (DWFG) structure are presented. The gate of the n-channel DWFG MOSFET is composed of p<SUP>+</SUP> and n<SUP>+</SUP> poly-Si along the channel carrier flowing direction. To investigate the impact of the proportional length of p- and n-type-doped poly-Si on analog behaviors, they are varied within a total physical gate length of 1.0 μm. Various dc characteristics that directly affect analog circuit performances are evaluated from the fabricated devices: <I>I</I>-<I>V</I> characteristics, drain-induced barrier lowering, transconductance (<I>gm</I>), drain conductance (<I>g</I><SUB>ds</SUB> = 1/<I>r</I><SUB>out</SUB>), intrinsic gain (<I>AV</I> = <I>gm</I>/<I>g</I><SUB>ds</SUB>), and Early voltage (<I>V</I><SUB>EA</SUB> = <I>ID</I>/<I>g</I><SUB>ds</SUB>). From the measurements, the DWFG devices always show improved characteristics over conventional devices (n<SUP>+</SUP>-doped poly-Si gate). The DWFG device with the shortest p<SUP>+</SUP> poly-Si gate length (<I>p</I>/<I>n</I> = 0.4/0.6) shows better <I>gm</I> characteristics than other DWFG devices. The <I>g</I><SUB>ds</SUB> characteristics of the fabricated DWFG devices are improved as the length of the p<SUP>+</SUP> poly-Si increases. The best <I>AV</I> and <I>V</I><SUB>EA</SUB> are taken from the device with a p-type-doped poly-Si length of 0.7 μm (<I>p</I>/<I>n</I> = 0.7/0.3).</P>
Kim, Ju-Youn,Choi, Yun-Seok,Kwon, Ami,Chung, Woo-Baek,Park, Chul-Soo,Kim, Hee-Yeol,Chang, Kiyuk,Lee, Man-Young,Chung, Wook-Sung,Seung, Ki-Bae Wolters Kluwer Health 2015 Medicine Vol.94 No.46
<P><B>Abstract</B></P><P>It has been shown that triple antiplatelet therapy with cilostazol results in better clinical outcomes than dual therapy in patients treated with a first-generation drug-eluting stent (DES); however, it is unclear whether triple antiplatelet therapy has a similar efficacy after the implantation of second-generation DES.</P><P>In the COACT (Cath Olic medical center percutAneous Coronary in Tervention) registry, 1248 study subjects who underwent percutaneous coronary intervention with an everolimus- or zotarolimus-eluting stent (Endeavor, Xience V, or Promus) were analyzed. The patients were divided into 2 groups after propensity score matching (n = 724; M = 422 [58.3%]; mean age = 66.1 ± 11.0 years): Group 1: patients treated with dual antiplatelet drugs (aspirin and clopidogrel; n = 362; M = 213 [58.8%]; mean age = 65.6 ± 11.7 years); Group 2: patients treated with triple antiplatelet drugs (aspirin, clopidogrel, and cilostazol; n = 362; M = 209 [57.7%]; mean age = 65.6 ± 11.7 years). The mean follow-up duration was 13 ± 10 months, and the cumulative incidence of major cardiovascular events (MACE) was 6.3% in Group 1 and 7.7% in Group 2. There were no significant differences in MACE (death, nonfatal myocardial infarction, and stroke) between the 2 groups (OR, 1.210; 95% CI: 0.772–1.898; <I>P</I> = 0.406). Kaplan–Meier curves for MACE did not show any survival benefit for triple antiplatelet therapy, even in patients with acute coronary syndrome.</P><P>In patients treated with a second-generation DES implantation, there is no added clinical benefit to using triple rather than dual antiplatelet therapy.</P>