http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
유기수 圓光大學校 基礎自然科學硏究所 1987 基礎科學硏究誌 Vol.6 No.3
고체시료 표면에 입사한 전자의 배후산란 전자에 대한 Monte carlo계산은 일반적으로 배후산란전자의 각분포, 에너지분포 그리고 배후산란 계수등에 실험값과 약간의 어긋남이 있다. 이 연구는 이론식을 Rutherford의 가려진 단면적 공식과 Bethe의 저지능 공식을 보완한 식 그리고 Poisson 분포식에 의한 주행거리를 이용한 단일산란 모델에 의해서 Monte Carlo방법으로 배후산란 전자에 대한 공간분포, 각분포, 에너지분포 그리고 배후 산란 계수를 계산하였다. 이 계산 결과는 실험값과 아주 잘 일치하였다. In the Monte Carlo calculations, there were some discrepancies between theory and experiments on backscattered electons, angular as well as energy distribution and backscatter coefficients. In this paper we attempted to examine the applicability of the Monte Carlo method in connection with a sing scattering model in which the screened Rutherford cross-section, the Bethe energy loss replenshed formula and the Poisson distribution's steps are used. The calculations show fairly good agreement with those of the experiments on backscattered electrons.
庾基洙 圓光大學校 1977 論文集 Vol.11 No.-
The gravitational field is very well explained by Einstein's theory. This has led people to believe that the electromagnetic field should also be ascribed with a similar method. Soon after the appearance of Einstein's theory, a solution of this problem was proposed by H. Weyl.1) The Curvature of space required by Einstein's theory can be discussed in terms of the notion of the parallel displacement of a vector. Weyl's generalization was to suppose that the final vector has a different length as well as a different direction, which is a very natural generalization of Riemannian space. Following the same method Yang and Mills formulated their theory. Then Utiyama proposed a generalization of these two approaches. In fact the Weyl's fieldΦμ was abandoned contrary to Weyl's intention owing to some defects. Many theories on these problems have been proposed, but they are all complicated and rather actificial, and are not generally accepted. Since there have been many discussions about this problem, we will further examine a generalization of Weyl's theory.
전자빔 리소그래피에서 0.3μm 리지스트 패턴을 위한 工程許容範圍
유기수,최금란,유흥우 圓光大學校 基礎自然科學硏究所 1993 基礎科學硏究誌 Vol.12 No.2
전자빔 直接 露光方法에 의해서 64 M bit DRAM을 위한 0.3㎛ 線幅 리지스트 斷面形狀에 대한 工程 許容範圍를 컴퓨터 시뮬레이션으로 계산하였다. 시료 구성은 0.3㎛의 W을 입히지 않은 Si기판과 W을 입힌 Si기판으로 구성한 3층 리지스트系로 하였다. 공정 허용범위는 0.2㎛ 단일선과 0.2㎛선 -0.4㎛선간 거리의 평행선에서 0.3㎛ 線幅과 0.3㎛ 線間 距離를 위한 리지스트 단면형상으로 전자빔의 에너지와 전자빔 조사법을 달리하면서 계산하였다. 그리고 평행선의 외각선은 補助 露光法에 의해서 중앙선의 공정 허용범위와 같게 하였다. This study describes the electron beam direct writing technology for 64M bit DRAMs including a resist process for 0.3㎛ fabrication. The delineation capability of 0.3㎛ lines is estimated by evaluating process latitudes with computer simulation. The trilayer resist system consists of layers on bare silicon substrate covered with 0.3㎛ tungsten. The behaviour of developed resist profiles under different conditions of direct writing technology and electron energy is presented in case of 0.2㎛ isolated line and a grating of 0.2㎛/0.4㎛ lines and spaces. The results show that the higher electron energy makes the process latitude larger and the resist patterns on W layer is less effective than bare Si substrate, however the process latitudes of two beam writing are larger than those of three beam writing. And the proper resist profiles of the grating periphery can be much the same as its center by the subsidiary exposure method.