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황의훈,김상욱 서울市立大學校 1985 論文集 Vol.19 No.-
epoxy수지와 함께 경화제로는 ethylene diamine(EDA), hexamethylene diamine(HDA), diethylene triamine(DETA)등을 사용하였다. 한편 첨가제로 phenyl glycidyl ether(PGE)를 사용하여, 이의 함량변화에 따른 각 hardner system의 力學的 性質에 대한 效果를 實驗하였다. 이를 위해 여러 가지 경화조건과 혼합비율에 따라 인장특성과 충격강도등을 측정하여 이들의 함수관계를 알 수 있었고 또한 이 composites의 역학적 성질이 최적화되는 조건을 고찰하였다. The purpose of this study is to research into the effect of PGE(Phenyl Glycidyl Ether) on mechanical properties of Epoxy-Amine-PGE system. For measurement of the mechnical properties, tensile properties and impact strengths are measured in accordance with an ASTEM method. Mechanical properties of Epoxy-Amine-PGE system have been investigated as a function of PGE content. The properties of the network structure are predominantly controlled by appropriate choice of PGE content. Results are as follows; 1. In three amine hardener systems, tensile properties increased but impact strengths somewhat decreased as a PGE content was increasing. This result may be due to effect of PGE which decreases system cross-linking density as "chain stopper". 2. Tensile strengths of Epoxy-HDA-PGE system were higher than those of Eposy-EDA-PGE system as a whole. This result may be due to decreasing of cross-linking density in system with increasing of molecular weight of hardener. 3. In Epoxy-DETA-PGE system, tensile strength had a maximum value and impact strength had a minimum value at PGE-12 phr.
핵생성 계면 제어에 의한 LPCVD 비정질 Si 박막의 고상결정화
김용수,노재상,황의훈,정세진,문용승 대한금속재료학회(대한금속학회) 2000 대한금속·재료학회지 Vol.38 No.7
A novel method for the fabrication of poly-Si films with a large grain size is reported using solid phase crystallization(SPC) of LPCVD amorphous Si films by nucleation interface control. The reference films used in this study were 1000Å-thick a-Si films deposited at 500℃ at a total pressure of 0.35 Torr using Si₂H_6/He. Since the deposition condition changes the incubation time, i.e. nucleation rate, and since nucleation occurs dominantly at a-Si/SiO₂ interface, we devised the following deposition techniques for the first time in order to obtain the larger gain size. A very thin a-Si layer (∼50Å) with the deposition conditions having long incubation time is grown first and then the reference films(∼950Å) are grown successively. Various composite films with different combinations were tested. The crystallization kinetics of composite films was observed to be determined by the deposition conditions of a thin a-Si layer at the a-Si/SiO₂ interface. Nucleation interface was also observed to be modified by interrupted gas supply resulting in the enhancement of the grain size.