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하진하,박현진,유성미,소유진,박노균,김진수,원종찬,김윤호 한국고분자학회 2021 한국고분자학회 학술대회 연구논문 초록집 Vol.46 No.2
Here, we successfully demonstrate large-area OFET arrays with water-borne PI gate dielectrics via a simple bar-coating process. The poly(amic acid) salt (PAAS) as a precursor of PI polymerized in water as a non-toxic solvent, which has hydrolytic stability and low-imidization temperature below 250 ℃, was well coated on the substrates with smooth surface morphology. The thickness of PI thin film as gate dielectric was precisely controlled between a few tens of nanometers and hundreds of nanometers via the concentration of the polymer solution and wire diameter of bar, bar pulling speed. As a results, a large-area OFET arrays with water-borne PI gate dielectrics were successfully fabricated by simple bar-coating process and showed excellent device-to-device performance uniformity in 4 inch transistor arrays.