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주병권,이상조,박재석,이윤희,전동렬,오명환 한국마이크로전자및패키징학회 1999 마이크로전자 및 패키징학회지 Vol.6 No.1
Lift-off 공정에 의하여 Si-tip FEA를 제조하고 그 동작 특성을 평가하였다. 게이트 및 양극 전압에 따른 방출 전류의 변화, 최대 방출 전류, 히스테리시스 현상, MOSFET형 특성, 전류 표동, 방출된 전자에 의한 형광체 발광, 그리고 소자의 파괴 메카니즘 등이 실험 결과를 토대로 하여 폭 넓게 평가, 분석되었다. Si-tip FEAs were fabricated by a lift-off based process and their operating properties were evaluated. The dependence of emission current on applied gate and anode voltages, maximum emission current, hysteresis phenomena, MOSFET-type curves, current fluctuation, light emission from the emitted electrons, and failure mechanism of the device were widely discussed based on the experimental results.
DLC-coated Si-tip FEA 제조에 있어서 기판 상에 경사-회전 증착된 Al 희생층을 이용한 Gate누설 전류의 감소
주병권,김영조 한국마이크로전자및패키징학회 2000 마이크로전자 및 패키징학회지 Vol.7 No.3
Lift-off를 이용한 DLC-coated Si-tip FEA 제조에 있어서 gate 절연막의 측면에 DLC가 coating되는 것을 방지하기 위해 기판 상에 Al 희생층을 경사-회전 증착한 뒤 DLC를 coating하고, 다음으로 희생층을 식각하여 tip 이외의 DLC를 제거하는 방법을 제안하였다. 이러한 Al희생층을 이용한 lift-off공정에 의해 제조된 DLC-coated Si-tip FEA의 전류전압 특성과 전류 표동 특성을 조사하였으며, gate 누설 전류의 감소와 방출 전류의 안정성을 확인하였다. For the DLC-coaled Si-tip FEA, the modified lift off-process, by which DLC coated on both gate electrode surface and gate insulator in the gate aperture could be removed, was proposed. In the process, the Al sacrificial layer was deposited on a tilted and rotated substrate by an e-beam evaporation, and DLC film was coated on the substrate by PA-CVD method. Afterward the DLC was perfectly removed except the DLC films coated on emitter tips by etch-out of Al sacrificial layer. Current-voltage curves and current fluctuation of the DLC-coated Si-tip FEA showed that the proposed lift-off process played an important role in decreasing gate leakage current and stabilizing omission current.
주병권,김성진,정재훈,박범수,백영준,임성규,오명환 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
Strip-shaped diamond field emitter arrays were fabricated by using a transfer mold technique. V-grooves were formed on a single crystalline (100) silicon substrate by an orientation dependent etching(ODE) method. Diamond film was grown on V-grooved silicon substrate by chemical vapor deposition(CVD). Diamond field emitter arrays were formed by etching silicon substrates. I-V characteristics of the fabricated diamond field emitter arrays under 2 x10^(-6) Torr showed very sharp turn-on characteristics. Empirical result which was obtained in this work is feasibility of transfer mold technique for fabrication of diamond field emitter arrays. It may be possible to use the strip-shaped diamond field emitter arrays for the field emission display (FED) applications.
실리콘 diaphragm의 일괄제조를 위한 Microscopy Study
주병권,하병주,차균현,김철주,오명환 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1
In case of deep etching to above 300μm depth, the etch-defects appeared at etched surface could be classified into three categories such as hillocks, reaction products, and white residues. Also, the difference in both the existence of etch-defects and etch rate distribution was investigated when the etched surface was downward, upward and erected vertically in etching solution. Finally, the nondestructive method for the thickness measurement of 5~20μm thick diaphragm was devised by the observation of transmitted light through diaphragm from a 50watt focused tungsten lamp.