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생활권침해(生活權侵害)에 대한 손해배상청구권(損害賠償請求權)의 법리(法理)
조일환 동의대학교 지방자치연구소 1985 공공정책연구 Vol.1 No.-
The infringement of right, one of the legal factors for the causation of responsibibility which is regarded as an illegal activity, is an infraction of upholding the law benefit acco-rding to the private opinion. The illegal activity of infringement of right of life cannot be made unless there is an occurrence in consequence of the victim`s death. The provision 750, virtually one of the general stipulations for the illegal activity in the civil law, imposes the indemnity obligation upon a person who inflicts the damages on other person, by intention or lapse. Any infringement of tight of life couldn`t possibly exist without the termination of the victim`s life in accordance with the national stipulation ag-ainst the infringement of right of life. In order for us to define and assert the infringement of right of life, there accordingly should be ensued a victim`s death. Mostly both the constituent of causation of responsibility in the illegal activity and the damages incurred by the infraction of right could be strictly distinguished. The intention or the lapse is involved only in the infringement of right of body. When the victim`s death results from both the infringement of right of body and the corresponding causation when the infringement of right of body precipitates a considerable loss, the illegal doer shall be liable to assume the indemnity against the death. Nobody can doubt about a theory of law of illegal activity, and the infringement of that illegal activity is not an infringement of right of life but that of right of body. It should be remembered that the extent of indemnity against the claims which bases on the illegal acitivity in consequence of the infringement of right of body exerts only the loss incurred by the death.
조일환,서동선,Cho, Il Hwan,Seo, Dongsun 한국전기전자학회 2015 전기전자학회논문지 Vol.19 No.1
소자의 집적화에 필수적인 소자 분리공정에서 화학약품의 오염 문제등을 발생시키는 화학적 기계연마기술(CMP) 공정을 사용하지 않고 벌크 finFET(fin field effect transistor) 의 트랜치 구조를 형성할 수 있는 공정에 대하여 제안하였다. 사진 감광막 도포시 발생하는 두께차이와 희생층으로 사용되는 실리콘 질화막을 사용하면 에칭 공정만을 사용하여 상대적으로 표면 위로 돌출된 부분의 실리콘 산화막 층을 에칭하는 것은 물론 finFET 의 채널로 사용되는 실리콘 트랜치 구조를 한번에 형성할 수 있는 특징을 갖는다. 본 연구에서는 AZ1512 사진 감광막을 사용하여 50 나노미터급 실리콘 트랜치 구조를 형성하는 공정을 수행하였으며 그 결과를 소개한다. Silicon trench process for bulk fin field effect transistor (finFET) is suggested without using chemical mechanical polishing (CMP) that cause contamination problems with chemical stuff. This process uses thickness difference of photo resistor spin coating and silicon nitride sacrificial layer. Planarization of silicon oxide and silicon trench formation can be performed with etching processes. In this work 50 nm silicon trench is fabricated with AZ 1512 photo resistor and process results are introduced.
Body-Tied Double-Gate SONOS Flash (Omega Flash) Memory Device Built on a Bulk Si Wafer
조일환,박병국,Jong Duk Lee,이종호,Si Young Choi,Tai-su Park 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.1
A new SONOS memory structure was proposed to solve the scaling-down problems of conventional ash memories. The proposed SONOS ash memory devices which has a body-tied n MOSFET structure, was fabricated using a bulk Si wafer and was characterized. The proposed devices show a reduced short-channel eect than conventional devices. The Fowler-Nordheim programming characteristics, the channel hot-electron injection programming characteristics, and the leakage-current characteristics of the body-tied double-gate ash memory device are shown.
Bi2Mg2/3Nb4/3O7을 사용한 온도센서의 저주파 잡음 특성
조일환,서동선 한국전기전자학회 2015 전기전자학회논문지 Vol.19 No.4
기존의 MOS 구조를 갖는 온도 센서가 가지는 누설 전류 문제를 해결하기 위하여 제안된 Bi2Mg2/3Nb4/3O7 (BMNO) 를 이용한 온도센서의 민감도 평가를 저주파 누설 전류 측정을 통하여 수행하였다. 측정결과에서 서로 다른 어닐링 온도 ( 600°C, 700°C, 800°C) 에 따른 서로 다른 패턴의 저주파 노이즈 특성을 얻을 수 있었으며, 그 결과에서 온도 센서 동작을 저해할 수 있는 공정 조건(700°C) 을 선별하는 결과를 얻을 수 있었다. 이와 같은 측정법은 향후 BMNO를 이용한 온도센서의 공정 최적화를 측정하는 방법으로 응용 될 수 있다. Sensitivity characteristics of temperature sensor with Bi2Mg2/3Nb4/3O7 (BMNO) layer were investigated with low frequency noise measurement. Temperature sensor with BMNO layer had high reliability and high sensitivity comparing with conventional MOS type temperature sensor. Annealing temperature variation effects with 600°C, 700°C and 800°C were measured and analyzed. Annealing temperature determines trap distribution and 700°C annealing sample has different pattern comparing with other samples. Results of low frequency noise can offer the design guide of temperature sensor performance.