청소년 게임이용문제 척도 개발 및 타당화

정여주(鄭璵澍),신윤정(申允廷),장유진(張有辰),고경희(高?希),윤제현(尹堤鉉),이도연(李到娟),김소아(金素娥),전보성(全?成) 서울대학교 교육연구소 2022 아시아교육연구 Vol.23 No.2

아동의 기질과 또래 상호작용 간의 관계 : 모의 양육스트레스의 매개효과를 중심으로

신은경,정아현,김소아 한국인간발달학회 2014 人間發達硏究 Vol.21 No.4

The purpose of this study was to investigate the relationship between children's temperament and peer relationships, as mediated by the parenting stress of mothers. The subjects for this study comprised of 1,703 pairs of 3 years old children and their mothers. The subjects were taken from the 2011 Panel Study on Korean Children, a large population-based study conducted by the Korea Institute of Child Care and Education. The data were analyzed by means of t-tests, Pearson correlation analyses, multiple regression analyses and the Sobel tests. The results of this study were as follows. First, children's activity, sociability and the parenting stress of mothers were found to be related to play interaction. Moreover, children's emotionality and the parenting stress of mothers were found to be related to play disruption. Children's activity, sociability, emotionality and maternal stress were related to play severance. Second, children's emotionality had an influence upon peer interaction, disruption and severance, which in turn were partially mediated by the parenting stress of mothers. Children's activity was shown to influence peer interaction and severance, which was partially mediated by the parenting stress of mothers. Finally, children's sociability was shown to influence peer interaction, peer disruption and severance, which, once again, was partially mediated by parenting stress of mothers.

Saccharomyces cerevisiae에서 Pseudoalteromonas carageenovora 유래 Arylsulfatase 유전자의 표층 발현

조은수,김현진,정소아,김정환,김연희,남수완,Cho, Eun-Soo,Kim, Hyun-Jin,Jung, So-A,Kim, Jeong-Hwan,Kim, Yeon-Hee,Nam, Soo-Wan 한국미생물·생명공학회 2009 한국미생물·생명공학회지 Vol.25 No.4

P. carageenovora 유래 arylsulfatase 유전자(astA)의 효모표면발현 plasmid pCTAST(7.1 kb)를 구축하여 S. cerevisiae EBY100에 형질전환하였고, 선별된 형질전환체들을 YPDG 배지에서 배양했을 때 4-methylumbelliferyl sulfate를 분해하여 형광을 보였다. 이는 효모에서 arylsulfatase가 활성형으로 생산되었음을 의미하였다. S. cerevisiae EBY100/pCTAST를 플라스크 배양했을 때 arylsulfatase 활성은 galactose가 완전히 소모된 배양 48시간째 최대 활성인 1.2 unit/mL로 나타났으며 배양 상등액에서는 활성이 나타나지 않았다. 효모 S. cerevisiae의 세포표면에서 발현된 재조합 arylsulfatase로 제조된 agarose를 agar와 시판용 agarose와 함께 ${\lambda}DNA$ HindIII marker를 사용하여 DNA 전기영동 성능을 비교 실험한 결과, agar보다는 재조합 arylsulfatase 처리로 제조한 agarose가 이동성이나 분리능에서 우수하였으며, 시판용 agarose와 비교하여 이동성이나 분리능이 유사한 결과를 확인할 수 있었다. 본 연구의 결과, 효모 S. cerevisiae의 세포표면에서 발현된 재조합 arylsulfatase 효소를 이용하여 한천으로부터 전기영동용 고순도 친환경적인 agarose 생물 생산 공정에 적용 가능함을 알 수 있었다. In this study, the arylsulfatase gene (astA, 984 bp ORF) from Pseudoalteromonas carrageenovora genome was expressed on the cell surface of S. cerevisiae by fusing with Aga2p linked to the membrane anchored protein, Aga1p. The constructed plasmid, pCTAST (7.1 kb), was introduced to S. cerevisiae EBY100 cell, and yeast transformants on YPDG plate showed the hydrolyzing activity for 4-methylumbelliferyl-sulfate and p-nitrophenyl-sulfate. When S. cerevisiae EBY100/pCTAST was grown on YPDG medium, the arylsulfatase activity of cell pellet reached about 1.2 unit/mL, whereas no extracellular arylsulfatase activity was detected. The DNA ladder in agarose prepared from agar by this recombinant arylsulfatase showed similar resolution and migration patterns with a commercial agarose. This results revealed that arylsulfatase expressed on the cell surface of S. cerevisiae could be applicable to the economic production of electrophoretic-grade agarose.

Effects of Precursor Concentrations on ZnO Nano-fibrous Thin Films Grown by Using the Sol-gel Dip-coating Method

이상헌,소운섭,정재학,남기웅,박형길,윤현식,김병구,박선희,김소아람,김민수,이제원,임재영 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.12

ZnO thin films were fabricated by depositing solutions with different precursor concentrations on quartz substrates by dip-coating method. The structural and optical properties of the ZnO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectroscopy. The average grain size in the ZnO thin films increased from 19.09 to 39.19 nm with increasing precursor concentrations, and nano-fibrous structures were observed on the surface when precursor concentrations above 0.4 M were used. The PL spectra, in all the cases, showed near-band-edge (NBE) emission and deep-level emission (DLE). When the precursor concentrations increased, the optical band gap values for the ZnO thin films shifted towards the blue region, and the values of the Urbach energy (<I>E<SUB>U</SUB></I>)<I> </I>gradually decreased from 154 to 65 meV.

Temperature-dependent Photoluminescence of ZnO Thin Films Deposited by Using the Sol-gel Dip-coating Method

이상헌,소원섭,정재학,남기웅,윤현식,박형길,김경민,김소아람,김민수,이제원,임재영 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.8

The sol-gel dip-coating method is a simple and inexpensive technique compared to molecular beam epitaxy and chemical vapor deposition. In spite of extensive research over the past several years, the temperature-dependent photoluminescence in ZnO is still not fully understood. The temperaturedependent PL of ZnO thin films grown on quartz substrate by using the dip-coating method are investigated. According to Haynes’ empirical rule, the peak at 3.320 eV could be attributed to two electron satellites (TES). Theoretically, the radiative lifetime of the free excitons increases with temperature. The full width at half maximum (FWHM) is theoretically fitted by the experimental data. In the case of exciton-LO phonon coupling, the FWHM value of the donor-acceptor pair (DAP) is larger than that of the free-to-neutral-acceptor (e,A⁰). In the case of the exciton-acoustic-phonon coupling strength, however, the value of the DAP is smaller than that of the (e,A⁰).

Photoluminescence Studies of ZnO Films Fabricated by Using a Combination of a Hydrothermal Method and Plasma-assisted Molecular Beam Epitaxy Regrowth

박영빈,김병규,임재영,남기웅,김소아람,이상헌,정재학 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.3

ZnO films were deposited on Si (100) substrates by using a two-step growth process. In the firststep, ZnO nanorods were grown by using the hydrothermal method at 140 C for 5 min. In thesecond step, a ZnO amorphous layer was deposited on the ZnO nanorods by spin-coating. Aftercompletion of the growth process, the films were annealed at 800 C for 10 min, and a ZnO activelayer was deposited on top of the amorphous layer by using plasma-assisted molecular beam epitaxy. Further, temperature-dependent photoluminescence (PL) measurement were conducted to study theoptical properties of the prepared films. In the low-temperature PL spectra, emission peaks in thenear-band-edge region were observed at 3.370, 3.362, 3.347, 3.329, 3.317, 3.288, 3.263, 3.219, 3.191,and 3.116 eV; these peaks were attributed to free excitons, neutral donor bound excitons, neutralacceptor donor excitons, two electron satellites, and donor acceptor pairs, respectively. Thesepeaks were red-shifted, and their intensity decreased with increasing temperature. The bindingenergy of the donor was calculated as 43.1 meV by using the Haynes rule. Further, the valueand , factors in the equation for the energy of localized excitons of donors and acceptors wereobtained as 0.73 meV and 750 K, respectively, by fitting the free exciton (FX) peak according toVarshni’s equation. The full width at half-maximum of PL for the films was about 95.1 meV atroom temperature; moreover, the following values were obtained for the films by using theoreticalequations: the background impurity broadening, I0 = 62 meV, the parameter describing exciton-LO phonon interaction, ΙLO = 80 meV, LO phonon energy, ~!LO = 72 meV, and, the couplingstrength of an exciton-acoustic phonon interaction,ph = 0.087 meV/K Furthermore, the activationenergy was about 60.1 meV. ZnO films were deposited on Si (100) substrates by using a two-step growth process. In the firststep, ZnO nanorods were grown by using the hydrothermal method at 140 C for 5 min. In thesecond step, a ZnO amorphous layer was deposited on the ZnO nanorods by spin-coating. Aftercompletion of the growth process, the films were annealed at 800 C for 10 min, and a ZnO activelayer was deposited on top of the amorphous layer by using plasma-assisted molecular beam epitaxy. Further, temperature-dependent photoluminescence (PL) measurement were conducted to study theoptical properties of the prepared films. In the low-temperature PL spectra, emission peaks in thenear-band-edge region were observed at 3.370, 3.362, 3.347, 3.329, 3.317, 3.288, 3.263, 3.219, 3.191,and 3.116 eV; these peaks were attributed to free excitons, neutral donor bound excitons, neutralacceptor donor excitons, two electron satellites, and donor acceptor pairs, respectively. Thesepeaks were red-shifted, and their intensity decreased with increasing temperature. The bindingenergy of the donor was calculated as 43.1 meV by using the Haynes rule. Further, the valueand , factors in the equation for the energy of localized excitons of donors and acceptors wereobtained as 0.73 meV and 750 K, respectively, by fitting the free exciton (FX) peak according toVarshni’s equation. The full width at half-maximum of PL for the films was about 95.1 meV atroom temperature; moreover, the following values were obtained for the films by using theoreticalequations: the background impurity broadening, I0 = 62 meV, the parameter describing exciton-LO phonon interaction, ILO = 80 meV, LO phonon energy, ~!LO = 72 meV, and, the couplingstrength of an exciton-acoustic phonon interaction,ph = 0.087 meV/K Furthermore, the activationenergy was about 60.1 meV.

Enhanced Optical and Electrical Properties of Boron-doped Zinc-oxide Thin Films Prepared by Using the Sol-gel Dip-coating Method

이상헌,김민수,정유진,정재학,김소아람,임재영,Howoon Kim 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.9

Undoped ZnO and B-dopoed ZnO (BZO) thin films with 0 to 2.5 at.% B were prepared by usingsol-gel synthesis. Their optical and electrical properties and surface morphology were investigatedusing scanning electron microscopy, photoluminescence (PL), and van der Pauw Hall-effect measurements. All of the thin films were deposited appropriately onto quartz substrates; they exhibiteda fibrous root morphology, with structures that changed in size with increasing B concentration. The PL spectra showed near-band-edge (NBE) emissions and deep-level emissions (DLE). The NBEemission and the DLE for the BZO thin films were more blue-shifted than those for the undopedZnO thin film, and the blue shift increased the efficiency of the NBE emission of the BZO thin films. The Hall-effect data suggested that B doping also improved the electrical properties, such as thecarrier concentration, Hall mobility, and resistivity, of the thin films. The resistivity and the Hallmobility decreased with increasing B concentration and were inversely proportional to the carrierconcentration.

유전자조작, 균주분리 Saccharomyces cervisiae에서 Pseudoalteromonas carapeenovora 유래 Arylsulfatase 유전자의 표층 발현

조은수 ( Eun Soo Cho ),김현진 ( Hyun Jin Kim ),정소아 ( So A Jung ),김정환 ( Jeong Hwan Kim ),김연희 ( Yeon Hee Kim ),남수완 ( Soo Wan Nam ) 한국미생물생명공학회 2009 한국미생물·생명공학회지 Vol.37 No.4